Designed for applications such as solar inverters, UPS systems, motor drivers, high voltage DC-DC converters, and switch mode power supplies-STMicroelectronics SCTx0N120 silicon carbide power MOSFETs.
MOSFETs are produced using advanced and innovative wide bandgap materials. This results in an unparalleled on-resistance per unit area, and the switching performance is virtually unaffected by temperature. The outstanding thermal performance of SiC materials and the proprietary HiP247 package allow designers to use industry-standard profiles with significantly improved thermal performance. These features make the device ideal for high efficiency and high power density applications.
