The latest LPDDR4X has high performance and energy efficiency, while greatly increasing the level of heat resistance of automotive applications that typically need to work in extreme environments.
10nm DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface to reach the highest density.
Sewon Chun, senior vice president of Samsung's memory market, said, "16Gb LPDDR4X DRAM is our most advanced automotive solution, providing outstanding reliability, endurance, speed, capacity and energy efficiency to automakers worldwide.
Samsung ’s 16Gb LPDDR4X “Automotive Grade 2” DRAM over 20nm can withstand temperatures from -40 ° C to 105 ° C, meet automotive grade standards, and raise the high-end threshold to 125 ° C. By meeting the rigorous internal thermal cycling tests of global automotive manufacturers, 16Gb LPDDR4X enhances the reliability of various automotive applications in many of the world's most challenging environments.
In addition to high-temperature reliability, advanced 10nm node production is critical to providing leading-edge performance and power efficiency for 16Gb LPDDR4X. Even at temperatures up to 125 ° C, the data processing speed can reach 4266 megabits per second (Mbps), which is 14% more than 8Gb LPDDR4 DRAM based on 20nm processing technology, and the new memory power efficiency is improved by 30%. .
With the announcement of the 256GB Embedded Universal Flash (eUFS) driver in February, Samsung has expanded its family of advanced storage solutions to accommodate future automotive applications, using 10nm-class 16Gb LPDDR4X DRAM, with 12Gb and 12Gb on the market. 16Gb, 24Gb and 32Gb capacity. While expanding its 10nm-class DRAM products, the company also plans to strengthen its technical partnership with automotive solutions, including visual ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.
