The 514 nm narrow gate green laser diode of ams OSRAM is an ideal choice for life science applications | Heisener Electronics
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The 514 nm narrow gate green laser diode of ams OSRAM is an ideal choice for life science applications

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포스트 날짜: 2022-10-12, ams

   Ams OSRAM's 514 nm (±1 nm) laser diode is a standard, non-custom product that enables manufacturers of scientific and measurement equipment to replace argon-ion lasers which have traditionally been used to generate laser emission at a peak wavelength of 514.5 nm.   A semiconductor laser such as the PLT5 522FA_ P-M12 is in general more cost-effective and much smaller than an argon-ion laser, has a longer operating lifetime, and eliminates the need for a cumbersome water-cooling mechanism.   The weight of a single-mode laser diode is just a few grams compared to several kilograms for cooling and the power supply of an argon-ion laser.

     Previous attempts to produce laser-diode based 514 nm emitter modules have been hampered by the substantial logistics effort required in the past to customize laser diodes binned by a specific wavelength.   The 514 nm laser diode enables customers to produce a narrow bandwidth using a VBG (volume Bragg grating) or external cavity design, reducing the bandwidth even further to less than 0.1 nm for applications including Raman spectroscopy and holography.

     Ams OSRAM's laser diode PLT5 522FA_ P with 50 mW optical power output at 514 nm ±1 nm (Bin M12) is compatible with fluorescent dyes in the 514 nm range as well as with various third-party lenses.

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