Infineon Technologies Bipolar GmbH & Co. KG has expanded the high-power Prime Switch family with a new chip IGBT (PPI) with FWD inside a ceramic disc housing. Suitable for high current MMCs, DC circuit breakers, medium voltage drives, wind turbine converters and traction systems. And this PPI is specially designed for power transmission and distribution applications
When 3000A has no FWD, the blocking voltage is 4.5kV; when there is FWD, the blocking voltage is 2000A. Paired with 3000 PPI, the company offers external free-wheeling diodes in four different silicon diameters: D1600U45X122, D2700U45X122, D3900U45X172 and D4600U45X172.
Leading high-voltage IGBT chip trench technology and proven high-reliability press-fit technology provide customers with superior, high-performance solutions for ultra-high power applications. In addition, the device offers new opportunities to optimize high-power applications in terms of losses, reliability and cost.
To cover multiple applications and power ranges, internal chip stacks and housing designs allow companies to produce perfectly matched combinations with different current values and topologies. Two PPI enclosures are hermetically sealed and specially developed to withstand system-induced failures. In this way, it provides an extremely strong resistance to house breakage and a "short failure" function.
