Qorvo®, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace and defense applications, today announced seven 750V silicon carbide (SiC) FETs in a surface mount D2PAK-7L package. With this package, Qorvo's SiC FETs are tailored for fast-growing on-board chargers, soft-switching DC/DC converters, battery charging (fast DC and industrial), and IT/server power applications. Available in thermally enhanced packages, they provide an ideal solution for high-power applications requiring maximum efficiency, low conduction losses, and cost-effectiveness.
At 650/750V, the fourth-generation UJ4C/SC series has an RDS(on) of 9 milliohms (mohm), an industry-low level, with rated resistances of 9, 11, 18, 23, 33, 44 and 60 ohms. This broad selection provides engineers with more device options and enables greater flexibility to achieve the ideal cost/efficiency trade-off while maintaining rich design margins and circuit robustness. Utilizing a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices offer an excellent RDS x A figure of merit capable of maximum Minimize conduction losses in small die size.
Anup Bhalla, chief engineer at UnitedSiC (now acquired by Qorvo), said: "The D2PAK-7L package reduces inductance in the compact internal connection loop, which, combined with the included Kelvin source connection, enables low switching losses and higher operating frequencies , and improve system power density. In addition, these devices are silver sintered die attach, which maximizes heat removal from standard PCB and IMS substrates through liquid cooling, resulting in very low thermal resistance.”
