Vishay Intertechnology, Inc. announces the launch of a new fourth-generation 600 V EF family of fast-body diode MOSFETs, SiHK045N60EF, in a thin PowerPAK 10 x 12 package. Vishay Siliconix N-Channel SiHK045N60EF offers efficient, high-power density solutions for communication, industrial and computing applications with a 60% reduction in gate charge, resulting in device on-resistance multiplied by gate charge. The significant merit factor (FOM) of 600 V MOSFETs in power conversion applications is a new low in the startup world.
Vishay offers a wealth of MOSFET technology to support all levels of power conversion, covering a wide range of high-tech systems from high voltage input to low voltage output. With the introduction of the SiHK045N60EF and the release of other fourth-generation 600 V EF devices, Vishay meets the first two stages of the power system architecture to improve energy efficiency and power density -- including Totem pole bridgeless power factor correction (PFC) and subsequent DC/DC converter modules. Typical applications include edge computing and data storage, uninterruptible power supplies, high intensity discharge (HID) lamps and fluorescent lamp ballast lighting, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.
SiHK045N60EF is based on Vishay energy efficient E Series superjunction technology. The typical on-resistance at 10 Vis only 0.045Ω, which is 27% lower than PowerPAK 8 x 8 package devices. This improves power rating and supports applications of ≥ 3 kW, while device height is as low as 2.3mm. Increased power density. In addition, the MOSFET ultra-low gate charge drops to 70 nC. The FOM of the device is 3.15Ω *nC, which is 2.27% lower than the closest MOSFET competitor in the same category. These parameters indicate that conduction and switching losses are reduced, thus saving energy and improving energy efficiency. The device meets the special requirements of titanium efficiency for server power supply, or 98% peak efficiency for communication power supply.
The effective output capacitors Co(er) and Co(tr) of SiHK045N60EF are only 171 pf and 1069 pF, respectively, which can improve the switching performance of zero-voltage switching (ZVS) topologies, such as LLC resonant converters. The Co(tr) of the device is 8.79 % lower than that of the closest MOSFET competitor in the same class, and the Qrr of the fast body diode is as low as 0.8 μC, which helps to improve the reliability of the bridge topology. In addition, the MOSFET PowerPAK 10 x 12 package offers outstanding thermal performance for any surface mount with a maximum node-shell thermal resistance rating of 0.45 °C/W. The SiHK045N60EF thermal impedance is 31% lower than the PowerPAK 8 x 8 package.
The recently released MOSFETs are RoHS and Vishay Green compliant, halogen-free, resistant to avalanche mode overpressure transients, and guaranteed to pass 100% of the UIS limit
