Diodes Incorporated 제품

SQA000002

Diodes Incorporated

OSC XO 100.000MHZ HCSL SMD

• Type: XO (Standard)
• Frequency: 100MHz
• Function: Enable/Disable
• Output: HCSL
• Voltage - Supply: 2.5V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 40mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.053" (1.35mm)

패키지: 6-SMD, No Lead

DMG7702SFG-7

Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 890mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

ZVNL110A

Diodes Incorporated

MOSFET N-CH 100V 320MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

패키지: TO-226-3, TO-92-3 (TO-226AA)

ZXMC3AM832TA

Diodes Incorporated

MOSFET N/P-CH 30V 2.9A/2.1A 8MLP

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
• Power - Max: 1.7W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-MLP (3x2)

패키지: 8-VDFN Exposed Pad

DMN63D1LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.25A SOT363

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 250mA
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
• Power - Max: 310mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

DDTC115EUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

DDZ22D-7

Diodes Incorporated

DIODE ZENER 22V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

PD3Z284C30-7

Diodes Incorporated

DIODE ZENER 30V 500MW POWERDI323

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 323
• Supplier Device Package: PowerDI? 323

패키지: PowerDI? 323

BZX84C27TS-7-F

Diodes Incorporated

DIODE ZENER ARRAY 27V SOT363

• Configuration: 3 Independent
• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±6%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

SD103CWS-7

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 350mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 10V
• Capacitance @ Vr, F: 28pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -65°C ~ 125°C

패키지: SC-76, SOD-323

SD103A-T

Diodes Incorporated

DIODE SCHOTTKY 40V 350MA DO35

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 350mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 30V
• Capacitance @ Vr, F: 50pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 125°C (Max)

패키지: DO-204AH, DO-35, Axial

SDT8A120P5Q-7

Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

GBJ606

Diodes Incorporated

RECT BRIDGE GPP 600V 6A GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

AS78L15RTR-E1

Diodes Incorporated

IC REG LINEAR 15V 100MA SOT89

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 36V
• Voltage - Output (Min/Fixed): 15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.8V @ 100mA (Typ)
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 6mA
• PSRR: 39dB (120Hz)
• Control Features: -
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

패키지: TO-243AA

AP7343D-17FS4-7B

Diodes Incorporated

IC REG LINEAR 1.7V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 1.7V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.39V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

패키지: 4-XDFN Exposed Pad

ZHT431C01L

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 67ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50µA
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

APX803L40-30SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 292 ms Minimum
• Voltage - Threshold: 3V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AH293-YL-13

Diodes Incorporated

IC MOTOR DRIVER ON/OFF SOT89-5

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Low Side (2)
• Interface: On/Off
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Fan Motor Driver
• Current - Output: 400mA
• Voltage - Supply: 1.8 V ~ 5.75 V
• Voltage - Load: 1.8 V ~ 5.75 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-89-5/6
• Supplier Device Package: SOT-89-5

패키지: SOT-89-5/6

PI3B3126WEX

Diodes Incorporated

BUS SWITCH 3V SO-14

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI2DDR3212ZLEX

Diodes Incorporated

IC 2:1 MUX/DEMUX DDR3 52TQFN

• Applications: Memory
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 14
• On-State Resistance (Max): 8 Ohm (Typ)
• Voltage - Supply, Single (V+): 1.5V, 1.8V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 2.7GHz
• Features: DDR3
• Operating Temperature: -
• Package / Case: 52-WFQFN Exposed Pad
• Supplier Device Package: 52-TQFN (9x3.5)

패키지: 52-WFQFN Exposed Pad

PT7C5037G1-2WF

Diodes Incorporated

XO CLOCK

• Logic Type: -
• Supply Voltage: -
• Number of Bits: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AP2205-W5-7

Diodes Incorporated

IC LDO CMOS LOWCURR SOT25

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 24V
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 22V
• Voltage Dropout (Max): 0.5V @ 150mA
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 60dB (100Hz ~ 1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

DMN3732UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id: 0.95V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
• Power - Max: 500mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-26

패키지: -

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SBR30A100CT-G-2084

Diodes Incorporated

DIODE ARR SBR 100V 15A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: -

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DMN61D9UDWQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.318A SOT363

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
• Power - Max: 370mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: -

PI3SSD1914NKE-DG

Diodes Incorporated

DDR SWITCH TFBGA-115

• Applications: -
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: -
• On-State Resistance (Max): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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DML3012LDC-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V V-DFN3030-

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 0.5V ~ 20V
• Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
• Current - Output (Max): 15A
• Rds On (Typ): 4.8mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Power Good, Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: V-DFN3030-12 (Type B)

패키지: -

DMN2451UFB4Q-7R

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 660mW (Ta)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

패키지: -

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