Diodes Incorporated 제품

DCX143ZU-7-F

Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

MMBZ5257BW-7

Diodes Incorporated

DIODE ZENER 33V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 58 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 25V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

MMBZ5248BW-7-F

Diodes Incorporated

DIODE ZENER 18V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 21 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

PR3005G-T

Diodes Incorporated

DIODE GEN PURP 600V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

B150AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

GBPC2510W

Diodes Incorporated

RECT BRIDGE GPP 1000V 25A GBPCW

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

GBU806

Diodes Incorporated

RECT BRIDGE GPP 600V 8A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

ZHT431C02STOB

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±2%
• Temperature Coefficient: 67ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50µA
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

PT8A3263BPE

Diodes Incorporated

HEATER CONTROLLER PDIP-16

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AL5812-3FF-7

Diodes Incorporated

LED LINEAR DRIVER U-DFN3030-6 T&

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 3.5V
• Voltage - Supply (Max): 60V
• Voltage - Output: 1 V ~ 60 V
• Current - Output / Channel: 150mA
• Frequency: -
• Dimming: PWM
• Applications: Signage
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN3030-6

패키지: 6-UDFN Exposed Pad

NIS5132MN2-FN-7

Diodes Incorporated

IC LOAD SWITCH 12V 3.6A 10-UDFN

• Function: Electronic Fuse
• Sensing Method: High-Side
• Accuracy: -
• Voltage - Input: 9 V ~ 18 V
• Current - Output: 3.6A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: U-DFN3030-10

패키지: 10-UFDFN Exposed Pad

PI3C3384QE

Diodes Incorporated

IC 10-BIT 2-PORT BUS SW 24-QSOP

• Type: Bus Switch
• Circuit: 5 x 1:1
• Independent Circuits: 2
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 24-QSOP

패키지: 24-SSOP (0.154", 3.90mm Width)

PI74FCT828ATS

Diodes Incorporated

IC BUFFER 10BIT NON-INV 24SOIC

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 10
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 15mA, 48mA
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 24-SOIC

패키지: 24-SOIC (0.295", 7.50mm Width)

LM2902QS14-13

Diodes Incorporated

IC OP AMP GP 700KHZ SO-14

• Amplifier Type: General Purpose
• Number of Circuits: 4
• Output Type: -
• Slew Rate: 0.3 V/µs
• Gain Bandwidth Product: 700kHz
• -3db Bandwidth: -
• Current - Input Bias: 200nA
• Voltage - Input Offset: 7mV
• Current - Supply: 2mA
• Current - Output / Channel: 50µA
• Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

PI3DDR4212NME

Diodes Incorporated

IC MUX/DEMUX 2:1 DDR 48TFBGA

• Applications: DDR3/DDR4
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 7 Ohm (Typ)
• Voltage - Supply, Single (V+): 1.8 V ~ 3.3 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 6GHz
• Features: -
• Operating Temperature: -
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (3x8)

패키지: 48-TFBGA

PI3VDP612-AZHEX

Diodes Incorporated

IC DEMULTIPLEXER 4LANE 42TQFN

• Applications: Video
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 10 Ohm
• Voltage - Supply, Single (V+): 3.3V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 3.25GHz
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 42-VFQFN Exposed Pad
• Supplier Device Package: 42-TQFN (9x3.5)

패키지: 42-VFQFN Exposed Pad

P6KE200A-B

Diodes Incorporated

TVS DIODE 171VWM 274VC DO15

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 2.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15

패키지: DO-204AC, DO-15, Axial

P6SMAJ33ADF-13

Diodes Incorporated

TRANSIENTVOLTAGESUPPRESSORD-FLAT

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

ZLNB2312Q16TC

Diodes Incorporated

IC MUX CTLR H/V TONE SW 16-QSOP

• Function: Multiplex Controller
• Frequency: -
• RF Type: LNB, DiSEqC? , STBs
• Secondary Attributes: With Dual Tone and Polarity Switch
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

패키지: 16-SSOP (0.154", 3.90mm Width)

AP2331TDW-7

Diodes Incorporated

IC LOAD SWITCH SC59

• Function: Current Switch
• Sensing Method: High-Side
• Accuracy: -
• Voltage - Input: 2.7 V ~ 5.2 V
• Current - Output: 200mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

TT6JL

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TTL T&R

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: TT

패키지: -

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DSC05120FP

Diodes Incorporated

DIODE SIL CARB 1.2KV 5A ITO220AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
• Capacitance @ Vr, F: 318pF @ 100mV, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC (Type WX)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

SBR15300D1-13

Diodes Incorporated

DIODE SBR 300V 15A TO252 TYPE TH

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 300 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK) Type TH
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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AZ23C3V3-7-G

Diodes Incorporated

DIODE ZENER ARRAY SOT323

• Configuration: -
• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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DSC04A065

Diodes Incorporated

SILICON CARBIDE RECTIFIER TO220A

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 170 µA @ 650 V
• Capacitance @ Vr, F: 187pF @ 100mV, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO220AC (Type WX)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

SDT15150P5-7

Diodes Incorporated

DIODE SCHOTKY 150V 15A PDI5 1.5K

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 860 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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SBR60A60CT-G

Diodes Incorporated

DIODE ARR SBR 60V 30A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: -

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DMP2040UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

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