페이지 17 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  17/271
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3KBP08M-01E4/P
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 800V 3A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,472
Standard
800V
3A
1.05V @ 3A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
GBPC2508
Diodes Incorporated

RECT BRIDGE GPP 800V 25A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고6,720
Standard
800V
25A
1.1V @ 12.5A
5µA @ 800V
-65°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
APT40DC60HJ
Microsemi Corporation

RECT BRIDGE 40A 600V SOT227

  • Diode Type: Single Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Current - Reverse Leakage @ Vr: 800µA @ 600V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고7,344
Silicon Carbide Schottky
600V
40A
1.8V @ 40A
800µA @ 600V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VBO130-18NO7
IXYS

DIODE BRIDGE 122A 1800V FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 122A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E
  • Supplier Device Package: PWS-E
패키지: PWS-E
재고3,952
Standard
1800V
122A
1.65V @ 300A
300µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E
PWS-E
VBO130-16NO7
IXYS

DIODE BRIDGE 122A 1600V FO-A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 122A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E
  • Supplier Device Package: PWS-E
패키지: PWS-E
재고7,936
Standard
1600V
122A
1.65V @ 300A
300µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-E
PWS-E
M2535SB1200
Crydom Co.

MODULE POWER 35A 1200V BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,312
Standard
1200V
35A
-
-
-
Chassis Mount
Module
Module
VBO13-08NO2
IXYS

BRIDGE RECT SGL PHASE 800V 18A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, FO-A
  • Supplier Device Package: FO-A
패키지: 4-Square, FO-A
재고2,736
Standard
800V
18A
1.8V @ 55A
300µA @ 800V
-40°C ~ 150°C (TJ)
QC Terminal
4-Square, FO-A
FO-A
GBPC35005W-E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 35A 50V GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고7,120
Standard
50V
35A
1.1V @ 17.5A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBLA04HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고3,392
Standard
400V
4A
1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DBL208G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 1200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: 4-DIP (0.300", 7.62mm)
재고2,672
Standard
1200V
2A
1.3V @ 2A
2µA @ 1200V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
MSB30KH-13
Diodes Incorporated

BRIDGE RECTIFIER MSBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MSBL
패키지: 4-SMD, Flat Leads
재고3,344
Standard
800V
3A
1.1V @ 3A
5µA @ 800V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MSBL
B125C800DM-E3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 0.9A 200V DFM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 900mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고2,240
Standard
200V
900mA
1V @ 900mA
10µA @ 200V
-40°C ~ 125°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
VS-40MT160PBPBF
Vishay Semiconductor Diodes Division

MOD 3PH BRIDGE 1600V MTP

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.51V @ 100A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 7-MTPB
  • Supplier Device Package: 7-MTPB
패키지: 7-MTPB
재고5,536
Standard
1600V
45A
1.51V @ 100A
-
-40°C ~ 150°C (TJ)
Through Hole
7-MTPB
7-MTPB
GBPC1502
Fairchild/ON Semiconductor

RECT BRIDGE GPP 15A 200V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고7,952
Standard
200V
15A
1.1V @ 7.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
CBRLDSH2-100 TR13
Central Semiconductor Corp

RECT BRIDGE 2A 100V 4LPDIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 2A
  • Current - Reverse Leakage @ Vr: 4µA @ 100V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-LPDIP
패키지: 4-SMD, Gull Wing
재고7,664
Schottky
100V
2A
840mV @ 2A
4µA @ 100V
-55°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-LPDIP
VS-36MT80
Vishay Semiconductor Diodes Division

RECT BRIDGE 3-PHA 800V 35A D-63

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, D-63
  • Supplier Device Package: D-63
패키지: 5-Square, D-63
재고5,984
Standard
800V
35A
-
10µA @ 800V
-55°C ~ 150°C (TJ)
QC Terminal
5-Square, D-63
D-63
hot DF08M
Diodes Incorporated

RECT BRIDGE GPP 800V 1A DF-M

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: DFM
패키지: 4-EDIP (0.300", 7.62mm)
재고192,336
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
DFM
BGX50AE6327HTSA1
Infineon Technologies

DIODE SWITCHING 50V SOT-143

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 70V
  • Current - Average Rectified (Io): 140mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
  • Current - Reverse Leakage @ Vr: 200nA @ 500V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고676,014
Standard
70V
140mA
1.3V @ 100mA
200nA @ 500V
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
BR2504W
EIC SEMICONDUCTOR INC.

STD 25A, CASE TYPE: BR50W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-50W
  • Supplier Device Package: BR-50W
패키지: -
Request a Quote
Standard
400 V
25 A
1.1 V @ 12.5 A
10 µA @ 400 V
-40°C ~ 150°C (TJ)
Through Hole
4-Square, BR-50W
BR-50W
GBU1005H
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
10 A
1.1 V @ 10 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJA1004-BP
Micro Commercial Co

DIODE BRIDGE 10A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
패키지: -
Request a Quote
Standard
400 V
10 A
1.1 V @ 5 A
10 µA @ 400 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
HDBLS104GH
Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: -
재고9,000
Standard
400 V
1 A
1.3 V @ 1 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
RS604
Good-Ark Semiconductor

BRIDGE RECTIFIER, GENERAL PURPOS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 2.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: -
재고3,600
Standard
400 V
2.5 A
1.1 V @ 6 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBU4M-7001E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
1 kV
3 A
1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU804-G
Comchip Technology

BRIDGE RECT

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: -
Request a Quote
Standard
400 V
8 A
1 V @ 4 A
10 µA @ 400 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
MT5010A-BP
Micro Commercial Co

Interface

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, MT-35A
  • Supplier Device Package: MT-35A
패키지: -
Request a Quote
Standard
1 kV
50 A
1.2 V @ 25 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Chassis Mount
5-Square, MT-35A
MT-35A
KBPF205G-C0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 2A KBPF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPF
  • Supplier Device Package: KBPF
패키지: -
Request a Quote
Standard
600 V
2 A
1.1 V @ 1 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPF
KBPF
TT8M_HF
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE TTL T&R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TT
패키지: -
Request a Quote
Standard
1 kV
8 A
1 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TT