페이지 20 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  20/271
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설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CBR10F-J020
Central Semiconductor Corp

RECT BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, CM
  • Supplier Device Package: CM
패키지: 4-Square, CM
재고4,016
Standard
200V
10A
1.3V @ 5A
10µA @ 200V
-
Through Hole
4-Square, CM
CM
MSDM50-08
Microsemi Corporation

MOD BRIDGE 3PH 800V 50A M2-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: M2-1
패키지: Module
재고4,944
Standard
800V
50A
1.8V @ 150A
300µA @ 800V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
M2-1
VUO16-12NO1
IXYS

RECT BRIDGE 3PH 20A 1200V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 130°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
패키지: V1-A
재고2,304
Standard
1200V
20A
1.15V @ 7A
300µA @ 1200V
-40°C ~ 130°C (TJ)
Chassis Mount
V1-A
V1-A
3N251
Fairchild/ON Semiconductor

RECTIFIER BRIDGE 800V 1.5A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,424
Standard
800V
1.5A
1V @ 1A
5µA @ 800V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
W01G-E4/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1.5A 100V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고4,080
Standard
100V
1.5A
1V @ 1A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOG
WOG
GBPC1208-E4/51
Vishay Semiconductor Diodes Division

DIODE 1PH 12A 800V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고5,216
Standard
800V
12A
1.1V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
BR25005W-G
Comchip Technology

BRIDGE DIODE 25A 50V BR-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-W
  • Supplier Device Package: BR-W
패키지: 4-Square, BR-W
재고7,744
Standard
50V
25A
1.1V @ 25A
10µA @ 50V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, BR-W
BR-W
GBPC2510W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고4,128
Standard
1000V
25A
1.1V @ 12.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
KBJ2502G
GeneSiC Semiconductor

DIODE BRIDGE 200V 25A KBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBJ
  • Supplier Device Package: KBJ
패키지: 4-SIP, KBJ
재고2,100
Standard
200V
25A
1.05V @ 12.5A
10µA @ 200V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBJ
KBJ
GBU8005-G
Comchip Technology

RECTIFIER BRIDGE 8A 50V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고2,016
Standard
50V
8A
1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DBLS206GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: 4-SMD, Gull Wing
재고5,888
Standard
800V
2A
1.15V @ 2A
2µA @ 800V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
TB4S-G
Comchip Technology

DIODE BRIDGE GPP 0.8A 400V TBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-TBS
패키지: 4-SMD, Gull Wing
재고3,440
Standard
400V
800mA
950mV @ 400mA
10µA @ 400V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-TBS
GBPC2501
Fairchild/ON Semiconductor

RECT BRIDGE GPP 25A 100V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고3,056
Standard
100V
25A
1.1V @ 7.5A
5µA @ 100V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
VS-KBPC806
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 600V 8.0A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
패키지: 4-Square, D-72
재고5,424
Standard
600V
8A
1V @ 3A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
KBPC1010-G
Comchip Technology

RECTIFIER BRIDGE 10A 1000V KBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, KBPC
  • Supplier Device Package: KBPC
패키지: 4-Square, KBPC
재고7,328
Standard
1000V
10A
1.1V @ 5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Chassis Mount
4-Square, KBPC
KBPC
GUO40-12NO1
IXYS

3-PHASE BRIDGE RECT 1200V 40A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 5-SIP
  • Supplier Device Package: 5-SIP
패키지: 5-SIP
재고9,780
Standard
1200V
40A
1.28V @ 30A
40µA @ 1200V
-40°C ~ 175°C (TJ)
Through Hole
5-SIP
5-SIP
hot DF10M
Fairchild/ON Semiconductor

DIODE BRIDGE 1000V 1.5A 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.300", 7.62mm)
  • Supplier Device Package: 4-DIP
패키지: 4-EDIP (0.300", 7.62mm)
재고166,068
Standard
1000V
1.5A
1.1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
4-DIP
TS45PL05GHD2G
Taiwan Semiconductor Corporation

DIODE

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
DBL101GH
Taiwan Semiconductor Corporation

DIODE BRIDGE 1A 50V DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
패키지: -
Request a Quote
Standard
50 V
1 A
1.1 V @ 1 A
2 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBU8J-001M3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3.9 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU401G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 50V 4A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
패키지: -
Request a Quote
Standard
50 V
4 A
1.1 V @ 4 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
DB107-BPS01
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-1
패키지: -
Request a Quote
Standard
1 kV
1 A
1.1 V @ 1 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-1
HBS510-HF
Comchip Technology

BRIDGE RECTIFIER 1000V 5A HBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 5 A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: HBS
패키지: -
재고14,526
Standard
1 kV
5 A
970 mV @ 5 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
HBS
MT3510A-BP
Micro Commercial Co

Interface

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, MT-35A
  • Supplier Device Package: MT-35A
패키지: -
Request a Quote
Standard
1 kV
35 A
1.2 V @ 17.5 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Chassis Mount
5-Square, MT-35A
MT-35A
KBL405G-T0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: -
Request a Quote
Standard
600 V
4 A
1.1 V @ 4 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBP402G-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBP
  • Supplier Device Package: GBP
패키지: -
Request a Quote
Standard
200 V
4 A
1.05 V @ 2 A
10 µA @ 200 V
-55°C ~ 150°C
Through Hole
4-SIP, GBP
GBP
DB106S-HF
Comchip Technology

BRIDGE RECT 1PHASE 800V 1A DBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBS
패키지: -
Request a Quote
Standard
800 V
1 A
1.1 V @ 1 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBS
KBPC810
Diotec Semiconductor

BRIDGE 1-PH KBPC8-PB10 1000V 8A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, KBPC-8
  • Supplier Device Package: KBPC8
패키지: -
Request a Quote
Standard
1 kV
5 A
1.2 V @ 4 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-Square, KBPC-8
KBPC8