페이지 23 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 803
Language Translation

* Please refer to the English Version as our Official Version.

다이오드 - 브리지 정류기

기록 7,565
페이지  23/271
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot E-L6210
STMicroelectronics

IC SCHOTTKY DIO BRDG DUAL 16DIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Operating Temperature: 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP
패키지: 16-DIP (0.300", 7.62mm)
재고7,568
Schottky
50V
2A
1.2V @ 1A
1mA @ 40V
70°C (TA)
Through Hole
16-DIP (0.300", 7.62mm)
16-PowerDIP
hot KBL02
Fairchild/ON Semiconductor

IC BRIDGE RECT 4A 200V KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고10,200
Standard
200V
4A
1.1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
92MT120KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 1200V 90A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
패키지: MTK
재고6,384
Standard
1200V
90A
-
-
-40°C ~ 125°C (TJ)
Chassis Mount
MTK
MTK
110MT80KB
Vishay Semiconductor Diodes Division

RECT BRIDGE 800V 110A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
  • Current - Reverse Leakage @ Vr: 10mA @ 1000V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
패키지: MTK
재고5,808
Standard
800V
110A
1.4V @ 150A
10mA @ 1000V
-40°C ~ 150°C (TJ)
Chassis Mount
MTK
MTK
PB62
Micro Commercial Co

RECTIFIER BRIDGE 6A 200V PB-6

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-6
  • Supplier Device Package: PB-6
패키지: 4-Square, PB-6
재고3,536
Standard
200V
6A
1.1V @ 3A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, PB-6
PB-6
MB1505W
Micro Commercial Co

RECT BRIDGE 15A 50V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
패키지: 4-Square, MB-35W
재고6,624
Standard
50V
15A
1.2V @ 7.5A
10µA @ 50V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
VUO105-14NO7
IXYS

RECT BRIDGE 3PH 140A 1400V PWS-C

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 140A
  • Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
  • Current - Reverse Leakage @ Vr: 100µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-C
  • Supplier Device Package: PWS-C
패키지: PWS-C
재고6,576
Standard
1400V
140A
1.09V @ 40A
100µA @ 1400V
-40°C ~ 150°C (TJ)
Chassis Mount
PWS-C
PWS-C
hot VUO25-14NO8
IXYS

RECT BRIDGE 3PH 25A 1400V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: PWS-E1
패키지: 5-Square, FO-B
재고5,584
Standard
1400V
25A
2.2V @ 150A
300µA @ 1400V
-40°C ~ 150°C (TJ)
QC Terminal
5-Square, FO-B
PWS-E1
GBPC5008W
GeneSiC Semiconductor

DIODE BRIDGE 800V 50A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고7,344
Standard
800V
50A
1.2V @ 25A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
3N252-E4/51
Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 1000V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고4,768
Standard
1000V
1.5A
1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
hot GBU10K
GeneSiC Semiconductor

DIODE BRIDGE 800V 10A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고29,940
Standard
800V
10A
1.1V @ 10A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU1502TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 15A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: GBU
패키지: 4-ESIP
재고3,648
Standard
200V
15A
1.1V @ 15A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
GBU
G2SBA60L-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고2,096
Standard
600V
1.5A
1V @ 750mA
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBL401G
GeneSiC Semiconductor

DIODE BRIDGE 50V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: 4-SIP, KBL
재고3,824
Standard
50V
4A
1.1V @ 4A
5µA @ 50V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
KBP10M-E4/51
Vishay Semiconductor Diodes Division

DIODE 1.5A 1000V KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고5,120
Standard
1000V
1.5A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
BU2010-M3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 20A 1000V BU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU
  • Supplier Device Package: isoCINK+? BU
패키지: 4-SIP, BU
재고6,512
Standard
1000V
20A
1.05V @ 10A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+? BU
MD160S16M3-BP
Micro Commercial Co

BRIDGE RECT 1600V 160A M3 PAC

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 300A
  • Current - Reverse Leakage @ Vr: 500µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3
  • Supplier Device Package: M3
패키지: M3
재고5,168
Standard
1600V
160A
1.75V @ 300A
500µA @ 1600V
-40°C ~ 150°C (TJ)
Chassis Mount
M3
M3
GBU6B-BP
Micro Commercial Co

RECT BRIDGE GPP 6A 100V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고12,252
Standard
100V
6A
1V @ 3A
5µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJL2508-BP
Micro Commercial Co

DIODE BRIDGE GBJL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
패키지: -
Request a Quote
Standard
800 V
25 A
1.05 V @ 12.5 A
10 µA @ 800 V
-55°C ~ 150°C
Through Hole
4-SIP, GBJL
GBJL
GBJ35JL-F
Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
패키지: -
Request a Quote
Standard
600 V
35 A
920 mV @ 17.5 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
MSB25JL-13
Diodes Incorporated

LOW POWER BRIDGE MSBL T&R 2.5K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2.5 A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.25 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Lead
  • Supplier Device Package: MSBL
패키지: -
Request a Quote
Standard
600 V
2.5 A
920 mV @ 1.25 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Lead
MSBL
TS2100S_R1_00001
Panjit International Inc.

TDI, SKY

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 4 µA @ 100 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-MicroDIP/SMD
패키지: -
재고387
Schottky
100 V
2 A
840 mV @ 2 A
4 µA @ 100 V
-55°C ~ 125°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-MicroDIP/SMD
CBRLD1-08-BK
Central Semiconductor Corp

BRIDGE RECT 1P 800V 1A 4LPDIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-LPDIP
패키지: -
Request a Quote
Standard
800 V
1 A
1 V @ 1 A
10 µA @ 800 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-LPDIP
KMB26S
SMC Diode Solutions

BRIDGE RECT 1PHASE 60V 2A MBS

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 60 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: MBS
패키지: -
재고229,509
Schottky
60 V
2 A
700 mV @ 2 A
100 µA @ 60 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
MBS
BR1508
EIC SEMICONDUCTOR INC.

STD 15A, CASE TYPE: BR50

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, BR-50
  • Supplier Device Package: BR-50
패키지: -
Request a Quote
Standard
800 V
15 A
1.1 V @ 7.5 A
10 µA @ 800 V
-40°C ~ 150°C (TJ)
Chassis Mount
4-Square, BR-50
BR-50
TS25P05GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 25A TS-6P

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: -
재고3,600
Standard
600 V
25 A
1.1 V @ 25 A
10 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
ABS10TM
Diodes Incorporated

LOW POWER BRIDGE ABS/SOPA-4 T&R

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SOPA (Type WX)
패키지: -
Request a Quote
Standard
1 kV
1 A
950 mV @ 500 mA
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SOPA (Type WX)
MB351-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MB-35
  • Supplier Device Package: MB-35
패키지: -
Request a Quote
Standard
100 V
35 A
1.1 V @ 17.5 A
10 µA @ 100 V
-55°C ~ 125°C
QC Terminal
4-Square, MB-35
MB-35