페이지 1063 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL104-N-2-1-BP	Micro Commercial Co	DIODE GEN PURP 400V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	패키지: Axial, Radial Bend	재고4,768	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
RGP02-12E-M3/73	Vishay Semiconductor Diodes Division	DIODE 0.5A 1200V 300NS DO-204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고3,056	1200V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
STTH20R04W	STMicroelectronics	DIODE GEN PURP 400V 20A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max)	패키지: DO-247-2 (Straight Leads)	재고5,408	400V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	20µA @ 400V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
CEFB204-G	Comchip Technology	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AA, SMB	재고4,224	400V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
MUR130RL	ON Semiconductor	DIODE GEN PURP 300V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,304	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
FFB06U40STM	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 6A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,520	400V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
SD233N45S50PSC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 4.5KV 235A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500V Current - Average Rectified (Io): 235A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 50mA @ 4500V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 125°C	패키지: B-8	재고2,320	4500V	235A	3.2V @ 1000A	Standard Recovery >500ns, > 200mA (Io)	5µs	50mA @ 4500V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 125°C
6TQ035STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 6A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,000	35V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
R5021418FSWA	Powerex Inc.	DIODE GEN PURP 1.4KV 175A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 175A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 45mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-205AA, DO-8, Stud	재고7,440	1400V	175A	1.65V @ 470A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	45mA @ 1400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
1N4588	GeneSiC Semiconductor	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9.5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고4,288	200V	150A	1.5V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	9.5mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
BYWF29-150HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고5,744	150V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 150V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
SR815HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고3,568	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYW29-200-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2	재고3,408	200V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	45pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SE20FGHM3/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.7A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 920ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고2,608	400V	1.7A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	920ns	5µA @ 400V	13pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
SS110LHRFG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,840	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDBQR42-HF	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0402 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402/SOD-923F Operating Temperature - Junction: 125°C (Max)	패키지: 0402 (1005 Metric)	재고5,792	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	0402 (1005 Metric)	0402/SOD-923F	125°C (Max)
1N4936G B0G	TSC America Inc.	DIODE, FAST, 1A, 400V, 200NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,600	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS16L RQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,504	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N2021	Solid State Inc.	DIODE GEN PURP 150V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	150 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
1N5623US-TR	Microchip Technology	DIODE GEN PURP 1KV 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 500 nA @ 1 V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1 V	15pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
MUR2515	Solid State Inc.	D-04 STUD ULTRAFAST RECTIFIER 25 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	25A	950 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
HER102-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 mA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	100 V	1A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 mA @ 100 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
RFNL10BM6SFHTL	Rohm Semiconductor	DIODE GEN PURP 600V 10A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C	패키지: -	재고96	600 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	150°C
PU2JA	Taiwan Semiconductor Corporation	25NS, 2A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 22pF @ 4A, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고45,000	600 V	2A	1.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	2 µA @ 600 V	22pF @ 4A, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
GSBAT46W	Good-Ark Semiconductor	DIODE, SCHOTTKY, 150MA, 100V, SO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 75 V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	패키지: -	재고13,314	100 V	150mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 75 V	20pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
SS56C	MDD	DIODE SCHOTTKY 60V 5A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	60 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	400pF @ 4V, 1MHz	Surface Mount	-	-	-
RB162MM-40TFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
MUR405GP-AP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	4A	1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

RL104-N-2-1-BP

Micro Commercial Co

DIODE GEN PURP 400V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Axial, Radial Bend

재고4,768

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

RGP02-12E-M3/73

Vishay Semiconductor Diodes Division

DIODE 0.5A 1200V 300NS DO-204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고3,056

1200V

500mA

1.8V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 1200V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

STTH20R04W

STMicroelectronics

DIODE GEN PURP 400V 20A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)

패키지: DO-247-2 (Straight Leads)

재고5,408

400V

20A

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

20µA @ 400V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

175°C (Max)

CEFB204-G

Comchip Technology

DIODE GEN PURP 400V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AA, SMB

재고4,224

400V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C (Max)

MUR130RL

ON Semiconductor

DIODE GEN PURP 300V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,304

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 300V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

FFB06U40STM

Fairchild/ON Semiconductor

DIODE GEN PURP 400V 6A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,520

400V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

SD233N45S50PSC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4.5KV 235A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500V
Current - Average Rectified (Io): 235A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 1000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 50mA @ 4500V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 125°C

패키지: B-8

재고2,320

4500V

235A

3.2V @ 1000A

Standard Recovery >500ns, > 200mA (Io)

5µs

50mA @ 4500V

-

Chassis, Stud Mount

B-8

-40°C ~ 125°C

6TQ035STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 6A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,000

35V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

R5021418FSWA

Powerex Inc.

DIODE GEN PURP 1.4KV 175A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 175A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 45mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-205AA, DO-8, Stud

재고7,440

1400V

175A

1.65V @ 470A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

45mA @ 1400V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

1N4588

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9.5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고4,288

200V

150A

1.5V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

9.5mA @ 200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

BYWF29-150HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고5,744

150V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 150V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

SR815HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고3,568

150V

8A

1.02V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYW29-200-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

재고3,408

200V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 200V

45pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

SE20FGHM3/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.7A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고2,608

400V

1.7A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

920ns

5µA @ 400V

13pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

SS110LHRFG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,840

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDBQR42-HF

Comchip Technology

DIODE SCHOTTKY 30V 200MA 0402

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402/SOD-923F
Operating Temperature - Junction: 125°C (Max)

패키지: 0402 (1005 Metric)

재고5,792

30V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

10pF @ 1V, 1MHz

Surface Mount

0402 (1005 Metric)

0402/SOD-923F

125°C (Max)

1N4936G B0G

TSC America Inc.

DIODE, FAST, 1A, 400V, 200NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,600

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SS16L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,504

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N2021

Solid State Inc.

DIODE GEN PURP 150V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

150 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

1N5623US-TR

Microchip Technology

DIODE GEN PURP 1KV 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

1000 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

500 nA @ 1 V

15pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

MUR2515

Solid State Inc.

D-04 STUD ULTRAFAST RECTIFIER 25

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

25A

950 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 150 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

HER102-TP

Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 mA @ 100 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

100 V

1A

1.1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 mA @ 100 V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

RFNL10BM6SFHTL

Rohm Semiconductor

DIODE GEN PURP 600V 10A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C

패키지: -

재고96

600 V

10A

1.3 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

180 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

150°C

PU2JA

Taiwan Semiconductor Corporation

25NS, 2A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고45,000

600 V

2A

1.5 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

26 ns

2 µA @ 600 V

22pF @ 4A, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

GSBAT46W

Good-Ark Semiconductor

DIODE, SCHOTTKY, 150MA, 100V, SO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 75 V
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

패키지: -

재고13,314

100 V

150mA

450 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 75 V

20pF @ 0V, 1MHz

Surface Mount

SOD-123

125°C

SS56C

MDD

DIODE SCHOTTKY 60V 5A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

60 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 60 V

400pF @ 4V, 1MHz

Surface Mount

-

RB162MM-40TFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

Request a Quote

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

MUR405GP-AP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

4A

1 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 50 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C