페이지 1065 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-827
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

다이오드 - 정류기 - 단일

기록 52,788
페이지  1,065/1,886
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RJU4352TDPP-EJ#T2
Renesas Electronics America

DIODE GP 430V 20A TO220FP-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 430V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 430V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP-2L
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2 Full Pack
재고4,272
430V
20A
1.8V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 430V
-
Through Hole
TO-220-2 Full Pack
TO-220FP-2L
-55°C ~ 150°C
JANTXV1N6622U
Microsemi Corporation

DIODE GEN PURP 600V 1.2A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 500nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: SQ-MELF, A
재고6,608
600V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
SB340F055
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고4,016
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
180pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
1N3172R
Powerex Inc.

DIODE STUD MNT 240A 800V DO-9

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고7,072
-
-
-
-
-
-
-
-
-
-
-
VS-10ETF12SPBF
Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 310ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,816
1200V
10A
1.33V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
310ns
100µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 150°C
P600J-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: P600, Axial
재고2,928
600V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 600V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-55°C ~ 150°C
SE15FD-M3/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-219AB
재고7,792
200V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 200V
10.5pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
1N4937G R0G
TSC America Inc.

DIODE, FAST, 1A, 600V, 200NS, DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고5,680
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
1N5396-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 1.5A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 500V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고4,896
500V
1.5A
1.4V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 500V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
S3K R7G
TSC America Inc.

DIODE, 3A, 800V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고5,696
800V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
CSFB203-G
Comchip Technology

DIODE GEN PURP 200V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: 150°C (Max)
패키지: DO-214AA, SMB
재고29,682
200V
2A
920mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
150°C (Max)
SCS215AEC
Rohm Semiconductor

DIODE SILICON 650V 15A TO247

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 600V
  • Capacitance @ Vr, F: 550pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: 175°C (Max)
패키지: TO-247-3
재고8,952
650V
15A
1.55V @ 15A
No Recovery Time > 500mA (Io)
0ns
300µA @ 600V
550pF @ 1V, 1MHz
Through Hole
TO-247-3
TO-247
175°C (Max)
hot ES1ME-TP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMAE)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: DO-214AC, SMA
재고180,000
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 1000V
45pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMAE)
-50°C ~ 150°C
M2
M2
Diotec Semiconductor

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
Request a Quote
100 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 100 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
VS-2ENH02-M3-85A
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 2A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 28 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
200 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
28 ns
2 µA @ 200 V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
PMEG2005AESFCYL
Nexperia USA Inc.

PMEG2005AESF - 20V, 0.5A LOW VF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.9 ns
  • Current - Reverse Leakage @ Vr: 45 µA @ 20 V
  • Capacitance @ Vr, F: 25pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: DSN0603-2
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
20 V
500mA
550 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
1.9 ns
45 µA @ 20 V
25pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
DSN0603-2
150°C
ST1K
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA/DO-214AC
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
Request a Quote
800 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 800 V
-
Surface Mount
DO-214AC, SMA
SMA/DO-214AC
-50°C ~ 150°C
S3820
Microchip Technology

DIODE GEN PURP 200V 100A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
200 V
100A
1.15 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 200 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
1N459A-TR
Microchip Technology

DIODE GP REV 200V 150MA DO35

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
200 V
150mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 200 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 150°C
SIT12C065
Diotec Semiconductor

SiC Schottky, TO-220AC, 650V, 12

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -50°C ~ 175°C
패키지: -
재고3,000
650 V
12A
1.75 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 650 V
-
Through Hole
TO-220-2
TO-220AC
-50°C ~ 175°C
1N4002GP-AQ
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-41, Axial
  • Supplier Device Package: DO-204AC (DO-41)
  • Operating Temperature - Junction: -50°C ~ 175°C
패키지: -
Request a Quote
100 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 100 V
-
Through Hole
DO-204AC, DO-41, Axial
DO-204AC (DO-41)
-50°C ~ 175°C
CTLSH1-50M832DS-BK
Central Semiconductor Corp

DIODE SCHOTTKY 50V 1A TLM832DS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-TDFN Exposed Pad
  • Supplier Device Package: TLM832DS
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
50 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
50pF @ 4V, 1MHz
Surface Mount
8-TDFN Exposed Pad
TLM832DS
-65°C ~ 150°C
SS14M
Taiwan Semiconductor Corporation

1A, 40V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 40 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: Micro SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고17,451
40 V
1A
550 mV @ 1 A
No Recovery Time > 500mA (Io)
-
50 µA @ 40 V
50pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
ND171N18KHPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
패키지: -
Request a Quote
1800 V
171A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
GC02MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 12A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
  • Capacitance @ Vr, F: 127pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
12A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
2 µA @ 1200 V
127pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
MBRD6200
SMC Diode Solutions

DIODE SCHOTTKY 200V 6A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Capacitance @ Vr, F: 150pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
200 V
6A
920 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 200 V
150pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C
SD520S_L2_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 5A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
Request a Quote
20 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
-55°C ~ 125°C
SS210Q-LTP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 100V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 62pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고25,572
100 V
2A
800 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 100 V
62pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C