페이지 1146 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSEP30-06CR	IXYS	DIODE GEN 600V 30A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.07V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? Operating Temperature - Junction: -55°C ~ 175°C	패키지: ISOPLUS247?	재고6,048	600V	30A	3.07V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	250µA @ 600V	-	Through Hole	ISOPLUS247?	ISOPLUS247?	-55°C ~ 175°C
1N4151_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고5,712	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
CRNB20-1200	Crydom Co.	DIODE GP 1.2KV 12.7A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 12.7A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 125°C	패키지: TO-220-2	재고6,160	1200V	12.7A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AB	-40°C ~ 125°C
RS1KB-13	Diodes Incorporated	DIODE GEN PURP 800V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고3,008	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
IRKE236/16	Vishay Semiconductor Diodes Division	DIODE MODULE 1.6KV 230A INTAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 230A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: INT-A-PAK (2) Supplier Device Package: Module Operating Temperature - Junction: -	패키지: INT-A-PAK (2)	재고6,480	1600V	230A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1600V	-	Chassis Mount	INT-A-PAK (2)	Module	-
VS-71HF120M	Vishay Semiconductor Diodes Division	DIODE STD REC NOT ISO 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고2,624	1200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VS-5EWH06FNTRHM3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,776	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
BYT56K-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-64, Axial	재고3,936	800V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 800V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
NRVTS1245EMFST3G	ON Semiconductor	DIODE SCHOTTKY 45V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 600mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	패키지: 8-PowerTDFN, 5 Leads	재고2,496	45V	12A	600mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
RH 1Z	Sanken	DIODE GEN PURP 200V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고7,760	200V	600mA	1.3V @ 600mA	Standard Recovery >500ns, > 200mA (Io)	4µs	5µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
SB340-T	Diodes Incorporated	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고24,000	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SSL33 M6G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고3,472	30V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
CRS12(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	패키지: SOD-123F	재고2,432	60V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
BAT54-G3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,992	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	125°C (Max)
ES1CL RVG	TSC America Inc.	DIODE, SUPER FAST, 1A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,568	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
STPS8H100DEE-TR	STMicroelectronics	DIODE SCHOTTKY 100V 8A POWERFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 820mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerFlat? (3.3x3.3) Operating Temperature - Junction: 175°C (Max)	패키지: 8-PowerTDFN	재고22,080	100V	8A	820mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Surface Mount	8-PowerTDFN	PowerFlat? (3.3x3.3)	175°C (Max)
EG1A	Sanken Electric USA Inc.	DIODE GEN PURP 600V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 2 V @ 600 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	600 V	600mA	2 V @ 600 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	100 µA @ 600 V	-	Through Hole	Axial	-	-40°C ~ 150°C
MB520_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	재고91,968	200 V	5A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 175°C
GD10MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 26A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 26A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Capacitance @ Vr, F: 721pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고3,078	1700 V	26A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	721pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
40HFR30	Solid State Inc.	DIODE GEN PURP 300V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	패키지: -	Request a Quote	300 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
1N250RC	Solid State Inc.	DIODE GEN PURP REV 200V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
BAS116_R1_00001	Panjit International Inc.	DIODE GEN PURP 75V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고330	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
V3P22HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 1.7A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	200 V	1.7A	940 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	120pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
1N5400GP-AP	Micro Commercial Co	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EC31QS10	KYOCERA AVX	DIODE SCHOTTKY 100V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	100 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 100 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
1N1203RB	Solid State Inc.	DIODE GEN PURP REV 300V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	300 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SS1H10HM3_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max)	패키지: -	Request a Quote	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	175°C (Max)
NRVBS2040LNT3G	onsemi	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	40 V	2A	430 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C

DSEP30-06CR

IXYS

DIODE GEN 600V 30A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.07V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Operating Temperature - Junction: -55°C ~ 175°C

패키지: ISOPLUS247?

재고6,048

600V

30A

3.07V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

250µA @ 600V

-

Through Hole

ISOPLUS247?

-55°C ~ 175°C

1N4151_T50R

Fairchild/ON Semiconductor

DIODE GEN PURP 75V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고5,712

75V

150mA

1V @ 50mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

CRNB20-1200

Crydom Co.

DIODE GP 1.2KV 12.7A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 12.7A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 125°C

패키지: TO-220-2

재고6,160

1200V

12.7A

1.1V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1200V

-

Through Hole

TO-220-2

TO-220AB

-40°C ~ 125°C

RS1KB-13

Diodes Incorporated

DIODE GEN PURP 800V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고3,008

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

15pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

IRKE236/16

Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 230A INTAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 230A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (2)
Supplier Device Package: Module
Operating Temperature - Junction: -

패키지: INT-A-PAK (2)

재고6,480

1600V

230A

-

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 1600V

-

Chassis Mount

INT-A-PAK (2)

Module

-

VS-71HF120M

Vishay Semiconductor Diodes Division

DIODE STD REC NOT ISO 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고2,624

1200V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

VS-5EWH06FNTRHM3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,776

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

BYT56K-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

재고3,936

800V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 800V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

NRVTS1245EMFST3G

ON Semiconductor

DIODE SCHOTTKY 45V 12A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: 8-PowerTDFN, 5 Leads

재고2,496

45V

12A

600mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 45V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

RH 1Z

Sanken

DIODE GEN PURP 200V 600MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고7,760

200V

600mA

1.3V @ 600mA

Standard Recovery >500ns, > 200mA (Io)

4µs

5µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

SB340-T

Diodes Incorporated

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고24,000

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SSL33 M6G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고3,472

30V

3A

410mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

CRS12(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: SOD-123F

재고2,432

60V

1A

580mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

BAT54-G3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,992

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

125°C (Max)

ES1CL RVG

TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,568

150V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

STPS8H100DEE-TR

STMicroelectronics

DIODE SCHOTTKY 100V 8A POWERFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerFlat? (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)

패키지: 8-PowerTDFN

재고22,080

100V

8A

820mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Surface Mount

8-PowerTDFN

PowerFlat? (3.3x3.3)

175°C (Max)

EG1A

Sanken Electric USA Inc.

DIODE GEN PURP 600V 600MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 2 V @ 600 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

600 V

600mA

2 V @ 600 mA

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

100 µA @ 600 V

-

Through Hole

Axial

-

-40°C ~ 150°C

MB520_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

재고91,968

200 V

5A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 175°C

GD10MPS17H

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 26A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 26A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고3,078

1700 V

26A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1700 V

721pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

40HFR30

Solid State Inc.

DIODE GEN PURP 300V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -

패키지: -

Request a Quote

300 V

40A

-

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-

1N250RC

Solid State Inc.

DIODE GEN PURP REV 200V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

BAS116_R1_00001

Panjit International Inc.

DIODE GEN PURP 75V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고330

75 V

200mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

5 nA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

V3P22HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 1.7A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

200 V

1.7A

940 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

120pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

1N5400GP-AP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EC31QS10

KYOCERA AVX

DIODE SCHOTTKY 100V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

100 V

3A

850 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 100 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-40°C ~ 150°C

1N1203RB

Solid State Inc.

DIODE GEN PURP REV 300V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

300 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 300 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

SS1H10HM3_B-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)

패키지: -

Request a Quote

100 V

1A

770 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

175°C (Max)

NRVBS2040LNT3G

onsemi

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

40 V

2A

430 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C