페이지 1148 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRF10H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,880	-	-	-	-	-	-	-	-	-	-	-
5817SMG/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A DO215AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-215AA, SMB Gull Wing	재고87,720	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Surface Mount	DO-215AA, SMB Gull Wing	DO-215AA	-55°C ~ 150°C
GF1A/67A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214BA	재고5,360	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 50V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
R6020622PSYA	Powerex Inc.	DIODE GEN PURP 600V 220A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 220A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	패키지: DO-205AB, DO-9, Stud	재고6,832	600V	220A	2.75V @ 800A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50mA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
1N3294A	GeneSiC Semiconductor	DIODE GEN PURP 800V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 13mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고5,168	800V	100A	1.5V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	13mA @ 800V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
1N3087R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 150A DO205AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 17mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-205AC, DO-30, Stud	재고7,232	300V	150A	1.2V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	17mA @ 300V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-65°C ~ 200°C
VS-8ETH06FP-N3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 8A 600V TO-220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2 Full Pack	재고6,880	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220 Full Pack	-65°C ~ 175°C
SRAF520 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-220-2 Full Pack	재고2,560	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
GPA807HC0G	TSC America Inc.	DIODE, 8A, 1000V, AEC-Q101, TO-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고2,224	-	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-6EWH06FNTRLHM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 6A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,792	600V	6A	2.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
SS22L R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고6,864	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RGP10A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고4,112	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
PR1002G-T	Diodes Incorporated	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,728	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SR006HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,680	60V	500mA	700mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	80pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S3G R7G	TSC America Inc.	DIODE, 3A, 400V, DO-214AB (SMC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고5,744	400V	3A	1.15V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
JAN1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: A, Axial	재고7,776	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
RB520S-40-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C (Max)	패키지: SC-79, SOD-523	재고3,312	40V	200mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	-	Surface Mount	SC-79, SOD-523	SOD-523	125°C (Max)
UF4005-G	Comchip Technology	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,784	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SD091SB150A-T2	SMC Diode Solutions	DIODE SCHOTTKY 150V 7.5A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 7.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 150 V Capacitance @ Vr, F: 250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	150 V	7.5A	890 mV @ 7.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 150 V	250pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
40HFR50	Solid State Inc.	DIODE GEN PURP 500V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	패키지: -	Request a Quote	500 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
CBS05F30-L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA CST2B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 118pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max)	패키지: -	재고29,943	30 V	500mA	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	118pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
B140BE-13	Diodes Incorporated	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
S5DC-K	Taiwan Semiconductor Corporation	5A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000	200 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	34pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
JANTXV1N6625U-TR	Microchip Technology	DIODE GP 1.1KV 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 1 µA @ 1100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	1 µA @ 1100 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 150°C
V12P15HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	150 V	12A	1.08 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
APT60D100SG-TR	Microchip Technology	DIODE GEN PURP 1KV 60A D3PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: D3PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1000 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	280 ns	250 µA @ 1000 V	-	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	D3PAK	-55°C ~ 175°C
V20K170HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 170V 3.2A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170 V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 170 V Capacitance @ Vr, F: 800pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	패키지: -	Request a Quote	170 V	3.2A	1.02 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 170 V	800pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
MB36-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,256	60 V	3A	740 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	125pF @ 0V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C

MBRF10H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY ITO-220AC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,880

-

5817SMG/TR13

Microsemi Corporation

DIODE SCHOTTKY 20V 1A DO215AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: DO-215AA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-215AA, SMB Gull Wing

재고87,720

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Surface Mount

DO-215AA, SMB Gull Wing

DO-215AA

-55°C ~ 150°C

GF1A/67A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214BA

재고5,360

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 50V

-

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

R6020622PSYA

Powerex Inc.

DIODE GEN PURP 600V 220A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 220A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 800A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -45°C ~ 150°C

패키지: DO-205AB, DO-9, Stud

재고6,832

600V

220A

2.75V @ 800A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

50mA @ 600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-45°C ~ 150°C

1N3294A

GeneSiC Semiconductor

DIODE GEN PURP 800V 100A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 13mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고5,168

800V

100A

1.5V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

13mA @ 800V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 200°C

1N3087R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A DO205AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 17mA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-205AC, DO-30, Stud

재고7,232

300V

150A

1.2V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

17mA @ 300V

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-65°C ~ 200°C

VS-8ETH06FP-N3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A 600V TO-220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2 Full Pack

재고6,880

600V

8A

2.4V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

50µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220 Full Pack

-65°C ~ 175°C

SRAF520 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-220-2 Full Pack

재고2,560

20V

5A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 125°C

GPA807HC0G

TSC America Inc.

DIODE, 8A, 1000V, AEC-Q101, TO-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고2,224

-

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VS-6EWH06FNTRLHM3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,792

600V

6A

2.1V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

SS22L R3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고6,864

20V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RGP10A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고4,112

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

PR1002G-T

Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,728

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SR006HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,680

60V

500mA

700mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

80pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S3G R7G

TSC America Inc.

DIODE, 3A, 400V, DO-214AB (SMC)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고5,744

400V

3A

1.15V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 400V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

JAN1N5619

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: A, Axial

재고7,776

600V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

RB520S-40-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)

패키지: SC-79, SOD-523

재고3,312

40V

200mA

550mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 40V

-

Surface Mount

SC-79, SOD-523

SOD-523

125°C (Max)

UF4005-G

Comchip Technology

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,784

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

SD091SB150A-T2

SMC Diode Solutions

DIODE SCHOTTKY 150V 7.5A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 7.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Capacitance @ Vr, F: 250pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

150 V

7.5A

890 mV @ 7.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 150 V

250pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 175°C

40HFR50

Solid State Inc.

DIODE GEN PURP 500V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -

패키지: -

Request a Quote

500 V

40A

-

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-

CBS05F30-L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA CST2B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)

패키지: -

재고29,943

30 V

500mA

-

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

118pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

CST2B

125°C (Max)

B140BE-13

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

S5DC-K

Taiwan Semiconductor Corporation

5A, 200V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,000

200 V

5A

1.15 V @ 5 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

34pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

JANTXV1N6625U-TR

Microchip Technology

DIODE GP 1.1KV 1A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

1100 V

1A

1.75 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

1 µA @ 1100 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 150°C

V12P15HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

150 V

12A

1.08 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 150 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

APT60D100SG-TR

Microchip Technology

DIODE GEN PURP 1KV 60A D3PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: D3PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1000 V

60A

2.5 V @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

280 ns

250 µA @ 1000 V

-

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

D3PAK

-55°C ~ 175°C

V20K170HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 170V 3.2A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170 V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 170 V
Capacitance @ Vr, F: 800pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

패키지: -

Request a Quote

170 V

3.2A

1.02 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 170 V

800pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

MB36-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고2,256

60 V

3A

740 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 60 V

125pF @ 0V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C