페이지 1599 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP02-16EHE3/53	Vishay Semiconductor Diodes Division	DIODE 0.5A 1600V 300NS DO-204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고7,040	1600V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GI858-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-201AD, Axial	재고4,832	800V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 800V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
MURS210T3	ON Semiconductor	DIODE GEN PURP 100V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -60°C ~ 175°C	패키지: DO-214AA, SMB	재고3,168	100V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB	-60°C ~ 175°C
VS-10BQ040TRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고90,000	40V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
STTA806D	STMicroelectronics	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 52ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고191,088	600V	8A	1.75V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	52ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
SFF507GHC0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고4,640	500V	5A	1.7V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
RK 14V	Sanken	DIODE SCHOTTKY 40V 1.7A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.7A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,424	40V	1.7A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Through Hole	Axial	-	-40°C ~ 150°C
EM 1V	Sanken	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,536	400V	1A	970mV @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
FR1D-TP	Micro Commercial Co	DIODE GEN PURP 200V DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-214AA, SMB	재고5,104	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
SS13L RTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-219AB	재고7,216	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
BAS383-TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30MA MICROMLF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 60V Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, No Lead	재고6,816	60V	30mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 60V	1.6pF @ 1V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
BAS286-GS08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 200MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: SOD-80 Variant	재고2,416	50V	200mA	900mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	8pF @ 1V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	-65°C ~ 150°C
1N5395G R0G	TSC America Inc.	DIODE, 1.5A, 400V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고6,272	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
MBRF1045	SMC Diode Solutions	DIODE SCHOTTKY 45V ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Insulated, TO-220AC	재고48,180	45V	-	650mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	400pF @ 5V, 1MHz	Through Hole	TO-220-2 Insulated, TO-220AC	ITO-220AC	-55°C ~ 150°C
MMBD4148WT-TP	Micro Commercial Co	DIODE GEN PURP 75V 150MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-70, SOT-323	재고2,192	75V	150mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
SS2FH6HM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 780mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3µA @ 60V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고29,346	60V	2A	780mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3µA @ 60V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
DB2460600L	Panasonic Electronic Components	DIODE SCHOTTKY 60V 3A TMINIP2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12ns Current - Reverse Leakage @ Vr: 350µA @ 60V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: TMiniP2-F2-B Operating Temperature - Junction: 150°C (Max)	패키지: SOD-128	재고25,578	60V	3A (DC)	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	12ns	350µA @ 60V	40pF @ 10V, 1MHz	Surface Mount	SOD-128	TMiniP2-F2-B	150°C (Max)
EM1Z	Sanken Electric USA Inc.	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Through Hole	Axial	-	-40°C ~ 150°C
CSTB568-BK	Central Semiconductor Corp	DIODE GEN PURP 10MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 10mA Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -	패키지: -	Request a Quote	-	10mA	2.31 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	-	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-
WNSC6D04650Q	WeEn Semiconductors	DIODE SIL CARB 650V 4A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: 233pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	650 V	4A	1.4 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	233pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C
UTR62-TR	Microchip Technology	DIODE GEN PURP 600V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 600 V	40pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
MSASC75W45FS-TR	Microchip Technology	DIODE SCHOTTKY 45V 75A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 750 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	45 V	75A	760 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	750 µA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 175°C
PU3JB	Taiwan Semiconductor Corporation	25NS, 3A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	2 µA @ 600 V	31pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CGRB205-G	Comchip Technology	DIODE GEN PURP 600V 2A DO214AA S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C
RBR3LAM40CTFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고15,297	40 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
ACGRTS4004-HF	Comchip Technology	DIODE GP 400V 1A TS/SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: TS/SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	TS/SOD-123FL	-55°C ~ 150°C
PUUP4B	Taiwan Semiconductor Corporation	25NS, 4A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 71pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고17,994	100 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	71pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
PCDP0865GB_T0_00601	Panjit International Inc.	650V SIC SCHOTTKY BARRIER DIODE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 372pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고6,000	650 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C

RGP02-16EHE3/53

Vishay Semiconductor Diodes Division

DIODE 0.5A 1600V 300NS DO-204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고7,040

1600V

500mA

1.8V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 1600V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

GI858-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-201AD, Axial

재고4,832

800V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 800V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

MURS210T3

ON Semiconductor

DIODE GEN PURP 100V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -60°C ~ 175°C

패키지: DO-214AA, SMB

재고3,168

100V

2A

940mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB

-60°C ~ 175°C

VS-10BQ040TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고90,000

40V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

STTA806D

STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고191,088

600V

8A

1.75V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

52ns

100µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

SFF507GHC0G

TSC America Inc.

DIODE, SUPER FAST, 5A, 500V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고4,640

500V

5A

1.7V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 500V

50pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

RK 14V

Sanken

DIODE SCHOTTKY 40V 1.7A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.7A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,424

40V

1.7A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 40V

-

Through Hole

Axial

-

-40°C ~ 150°C

EM 1V

Sanken

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,536

400V

1A

970mV @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

FR1D-TP

Micro Commercial Co

DIODE GEN PURP 200V DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-214AA, SMB

재고5,104

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

SS13L RTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

재고7,216

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

BAS383-TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 30MA MICROMLF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 60V
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, No Lead

재고6,816

60V

30mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 60V

1.6pF @ 1V, 1MHz

Surface Mount

2-SMD, No Lead

MicroMELF

125°C (Max)

BAS286-GS08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 200MA SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SOD-80 Variant

재고2,416

50V

200mA

900mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 40V

8pF @ 1V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

-65°C ~ 150°C

1N5395G R0G

TSC America Inc.

DIODE, 1.5A, 400V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고6,272

400V

1.5A

1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

MBRF1045

SMC Diode Solutions

DIODE SCHOTTKY 45V ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Insulated, TO-220AC

재고48,180

45V

-

650mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

400pF @ 5V, 1MHz

Through Hole

TO-220-2 Insulated, TO-220AC

ITO-220AC

-55°C ~ 150°C

MMBD4148WT-TP

Micro Commercial Co

DIODE GEN PURP 75V 150MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-70, SOT-323

재고2,192

75V

150mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 150°C

SS2FH6HM3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3µA @ 60V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고29,346

60V

2A

780mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

3µA @ 60V

90pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

DB2460600L

Panasonic Electronic Components

DIODE SCHOTTKY 60V 3A TMINIP2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12ns
Current - Reverse Leakage @ Vr: 350µA @ 60V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: TMiniP2-F2-B
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

재고25,578

60V

3A (DC)

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

12ns

350µA @ 60V

40pF @ 10V, 1MHz

Surface Mount

SOD-128

TMiniP2-F2-B

150°C (Max)

EM1Z

Sanken Electric USA Inc.

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

200 V

1A

970 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Through Hole

Axial

-

-40°C ~ 150°C

CSTB568-BK

Central Semiconductor Corp

DIODE GEN PURP 10MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 10mA
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

10mA

2.31 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-

WNSC6D04650Q

WeEn Semiconductors

DIODE SIL CARB 650V 4A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Capacitance @ Vr, F: 233pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

650 V

4A

1.4 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 650 V

233pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C

UTR62-TR

Microchip Technology

DIODE GEN PURP 600V 2A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

600 V

2A

1.1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

400 ns

3 µA @ 600 V

40pF @ 0V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

MSASC75W45FS-TR

Microchip Technology

DIODE SCHOTTKY 45V 75A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 750 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

45 V

75A

760 mV @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

-

750 µA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 175°C

PU3JB

Taiwan Semiconductor Corporation

25NS, 3A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,000

600 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

26 ns

2 µA @ 600 V

31pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CGRB205-G

Comchip Technology

DIODE GEN PURP 600V 2A DO214AA S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C

RBR3LAM40CTFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고15,297

40 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

ACGRTS4004-HF

Comchip Technology

DIODE GP 400V 1A TS/SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: TS/SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

6pF @ 4V, 1MHz

Surface Mount

SOD-123F

TS/SOD-123FL

-55°C ~ 150°C

PUUP4B

Taiwan Semiconductor Corporation

25NS, 4A, 100V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 71pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고17,994

100 V

4A

930 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 100 V

71pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 175°C

PCDP0865GB_T0_00601

Panjit International Inc.

650V SIC SCHOTTKY BARRIER DIODE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 372pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고6,000

650 V

8A

1.6 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 650 V

372pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C