페이지 1600 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC23D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,960	1200V	25A (DC)	1.9V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
EGP20BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,952	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 150°C
1N4249GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 160°C	패키지: DO-204AL, DO-41, Axial	재고5,504	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 160°C
JANTXV1N5186	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: B, Axial	재고5,632	100V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 100V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
GKN71/16	GeneSiC Semiconductor	DIODE GEN PURP 1.6KV 95A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 95A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고5,840	1600V	95A	1.5V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 180°C
SRA16100 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고2,448	100V	16A	920mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFF1605G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 300V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고2,544	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
RGL41AHE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고3,248	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SR002 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고2,848	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
S1GLHR3G	TSC America Inc.	DIODE, 1A, 400V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고7,824	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
F1T5GHR0G	TSC America Inc.	DIODE, FAST, 1A, 600V, 250NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고3,328	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1ABTR	SMC Diode Solutions	DIODE GEN PURP 50V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고4,128	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C
V35PW12-M3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 35A 120V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 120V Capacitance @ Vr, F: 2350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,656	120V	35A	1.05V @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 120V	2350pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
PMEG3010EH,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 30V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고5,232	30V	1A (DC)	560mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	70pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C (Max)
SS8PH9-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 90V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고5,408	90V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 90V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
1N4002RLG	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고120,600	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
HS1O	Good-Ark Semiconductor	RECTIFIER, ULTRA-FAST/HIGH EFFIC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고43,470	1200 V	1A	1.7 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SD103AWHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 350MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 30 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고9,000	40 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 30 V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
HS1KFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,224	800 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 800 V	8pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
BA159GP-TP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
ME03EA045-TE12L	KYOCERA AVX	DIODE SCHOTTKY 45V 3A SMA-FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Flat Leads Supplier Device Package: SMA-FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	45 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	Surface Mount	DO-214AC, SMA Flat Leads	SMA-FL	-55°C ~ 150°C
JANTX1N6940UTK3AS-TR	Microchip Technology	DIODE SCHOTTKY 15V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 15 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	15 V	150A	500 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 15 V	-	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
KSF30F60B	KYOCERA AVX	DIODE GEN PURP 600V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	Through Hole	TO-247-3	TO-247	-55°C ~ 175°C
VSS8D3M10-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTT 100V 2.1A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: 340pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고27,312	100 V	2.1A	550 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	340pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C
GSGC1060S	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 10A, 60V, E Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 60 V Capacitance @ Vr, F: 950pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고23,934	60 V	10A	500 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 60 V	950pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277	-55°C ~ 150°C
STPST15H100SBYTR	STMicroelectronics	AUTOMOTIVE 100 V, 15 A, DPAK POW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 28 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고4,413	100 V	15A	740 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	28 µA @ 100 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-40°C ~ 175°C
JAN1N5616-TR	Microchip Technology	DIODE GEN PURP 400V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C
1N4004GR0	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

SIDC23D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,960

1200V

25A (DC)

1.9V @ 25A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

EGP20BHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,952

100V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

70pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 150°C

1N4249GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C

패키지: DO-204AL, DO-41, Axial

재고5,504

1000V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 1000V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 160°C

JANTXV1N5186

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: B, Axial

재고5,632

100V

3A

1.5V @ 9A

Standard Recovery >500ns, > 200mA (Io)

-

2µA @ 100V

-

Through Hole

B, Axial

Axial

-65°C ~ 175°C

GKN71/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 95A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 95A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고5,840

1600V

95A

1.5V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 180°C

SRA16100 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고2,448

100V

16A

920mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SFF1605G C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 300V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고2,544

300V

16A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

50pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

RGL41AHE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고3,248

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SR002 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고2,848

20V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

S1GLHR3G

TSC America Inc.

DIODE, 1A, 400V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고7,824

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

F1T5GHR0G

TSC America Inc.

DIODE, FAST, 1A, 600V, 250NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고3,328

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

S1ABTR

SMC Diode Solutions

DIODE GEN PURP 50V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고4,128

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 175°C

V35PW12-M3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 120V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 120V
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,656

120V

35A

1.05V @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 120V

2350pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

PMEG3010EH,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 30V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고5,232

30V

1A (DC)

560mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 30V

70pF @ 1V, 1MHz

Surface Mount

SOD-123F

150°C (Max)

SS8PH9-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 90V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고5,408

90V

8A

900mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 90V

140pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

1N4002RLG

ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고120,600

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

HS1O

Good-Ark Semiconductor

RECTIFIER, ULTRA-FAST/HIGH EFFIC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고43,470

1200 V

1A

1.7 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1200 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SD103AWHE3-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 350MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고9,000

40 V

350mA

600 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

5 µA @ 30 V

50pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

HS1KFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD128

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,224

800 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 800 V

8pF @ 4V, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

BA159GP-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

ME03EA045-TE12L

KYOCERA AVX

DIODE SCHOTTKY 45V 3A SMA-FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA Flat Leads
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

45 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

-

Surface Mount

DO-214AC, SMA Flat Leads

SMA-FL

-55°C ~ 150°C

JANTX1N6940UTK3AS-TR

Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 15 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

15 V

150A

500 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 15 V

-

Surface Mount

ThinKey™3

-65°C ~ 175°C

KSF30F60B

KYOCERA AVX

DIODE GEN PURP 600V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

30A

1.7 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

50 µA @ 600 V

-

Through Hole

TO-247-3

TO-247

-55°C ~ 175°C

VSS8D3M10-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 100V 2.1A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: 340pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고27,312

100 V

2.1A

550 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 100 V

340pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C

GSGC1060S

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 10A, 60V, E

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고23,934

60 V

10A

500 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 60 V

950pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277

-55°C ~ 150°C

STPST15H100SBYTR

STMicroelectronics

AUTOMOTIVE 100 V, 15 A, DPAK POW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 28 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고4,413

100 V

15A

740 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

28 µA @ 100 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-40°C ~ 175°C

JAN1N5616-TR

Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 400 V

-

Through Hole

A, Axial

-65°C ~ 200°C

1N4004GR0

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

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400 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C