페이지 260 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GL41T-E3/1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1300V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-213AB, MELF (Glass)
재고5,760
1300V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1300V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
RA202225XX
Powerex Inc.

DIODE MODULE 2.2KV 2500A PWRDISC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 2500A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 200mA @ 2200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: Pow-R-Disc
  • Operating Temperature - Junction: -
패키지: DO-200AD
재고6,192
2200V
2500A
1.25V @ 3000A
Standard Recovery >500ns, > 200mA (Io)
25µs
200mA @ 2200V
-
Chassis Mount
DO-200AD
Pow-R-Disc
-
VS-T85HFL80S05
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 85A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 20mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
패키지: D-55 T-Module
재고4,912
800V
85A
-
Fast Recovery =< 500ns, > 200mA (Io)
500ns
20mA @ 800V
-
Chassis Mount
D-55 T-Module
D-55
-
VS-6F100M
Vishay Semiconductor Diodes Division

DIODE STD REC 1000V 6A DO-4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-203AA, DO-4, Stud
재고4,256
1000V
6A
1.1V @ 19A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
FR16DR02
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-203AA, DO-4, Stud
재고3,488
200V
16A
900mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
VS-10ETF04SPBF
Vishay Semiconductor Diodes Division

DIODE RECT 400V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,136
400V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
100µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 150°C
SRAF1060HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2 Full Pack
재고2,944
60V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
SRAS20150HMNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,856
150V
20A
1.02V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
MURS160HE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고2,100
600V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
1N5819-E3/53
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3.1V
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-204AL, DO-41, Axial
재고3,328
40V
1A
900mV @ 3.1V
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 125°C
BAV19WS-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
패키지: SC-76, SOD-323
재고3,856
100V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 100V
1.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAV19-TAP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 100V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고6,064
100V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 100V
1.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
JANTXV1N4150-1
Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AH, DO-35, Axial
재고9,552
50V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
GL34A-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-213AA (Glass)
재고54,240
50V
500mA
1.2V @ 500mA
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
hot BAV203-GS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: SOD-80 QuadroMELF
  • Operating Temperature - Junction: 175°C (Max)
패키지: SOD-80 Variant
재고237,840
200V
250mA
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-80 Variant
SOD-80 QuadroMELF
175°C (Max)
hot STTH212S
STMicroelectronics

DIODE GEN PURP 1.2KV 2A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-214AB, SMC
재고1,049,160
1200V
2A
1.75V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1200V
-
Surface Mount
DO-214AB, SMC
SMC
175°C (Max)
1F5
1F5
SMC Diode Solutions

DIODE GEN PURP 600V 1A R-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-1, Axial
  • Supplier Device Package: R-1
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
600 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
15pF @ 4V, 1MHz
Through Hole
R-1, Axial
R-1
-65°C ~ 150°C
1N4254
Microchip Technology

RECTIFIER DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: S, Axial
  • Supplier Device Package: S, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
1500 V
250mA
3.5 V @ 100 mA
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 1500 V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
CLLSH1-20-TR
Central Semiconductor Corp

DIODE SCHOTTKY 20V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
20 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 20 V
-
Surface Mount
DO-214AC, SMA
SMA
-
S1GFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고84,000
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 400 V
9pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
S2220
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HERAF1008G
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 10A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,000
1000 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 1000 V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
FR151S-TP
Micro Commercial Co

DIODE GEN PURP 50V 1.5A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
50 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 50 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
SF68G
Taiwan Semiconductor Corporation

DIODE GEN PURP 6A 600V DO-201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고6,507
600 V
6A
1.7 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 600 V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
JANTXV1N5806US-TR
Microchip Technology

DIODE GEN PURP 150V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
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150 V
1A
875 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 150 V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
SBA140CH_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 1A SOD323HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323HE
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고1,275
40 V
1A
510 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
SOD-323HE
-55°C ~ 150°C
CD214C-S3G
Bourns Inc.

DIODE GEN PURP 400V 3A 2SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
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400 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
-
Surface Mount
2-SMD, No Lead
2-SMD
-65°C ~ 175°C
JAN1N6657
Microchip Technology

DIODE GEN PURP 100V 15A TO254

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 150pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
패키지: -
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100 V
15A
1.2 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 100 V
150pF @ 10V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-