페이지 261 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N3673A	Microsemi Corporation	DIODE GEN PURP 1KV 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,376	1000V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
1N4934GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	패키지: DO-204AL, DO-41, Axial	재고3,136	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
M100G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,648	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
1N4007GPEHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고3,248	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MRA4005T3	ON Semiconductor	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고233,868	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 175°C
R7014403XXUA	Powerex Inc.	DIODE GEN PURP 4.4KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 4400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-200AA, A-PUK	재고3,504	4400V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 4400V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
1N5833	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 40A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 10V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고4,064	30V	40A	550mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	-	20mA @ 10V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
C4D02120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 167pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328	1200V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	167pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
SBLF10L25-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 25V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 25V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고4,736	25V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 25V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
VS-HFA04SD60SR-M3	Vishay Semiconductor Diodes Division	DIODE HEXFRED 4A 600V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,096	600V	4A	1.8V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-65°C ~ 175°C
MBR1650 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고5,824	50V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF4007-TAP	Vishay Semiconductor Diodes Division	DIODE AVAL 1A 1000V SOD-57 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고6,864	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
RO 2ZV	Sanken	DIODE GEN PURP 200V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고6,864	200V	1.2A	930mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
SJPB-D9	Sanken	DIODE SCHOTTKY 90V 1A SJP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고3,280	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 150°C
ES1AL RFG	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고5,040	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT16 A1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고3,712	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS13HR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AC, SMA	재고7,200	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
PMEG040V030EPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 40V 3A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 13ns Current - Reverse Leakage @ Vr: 120µA @ 40V Capacitance @ Vr, F: 395pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max)	패키지: 3-SMD, Flat Leads	재고6,224	40V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	13ns	120µA @ 40V	395pF @ 1V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	175°C (Max)
APT30DQ120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-3	재고6,064	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
BAV21W-TP	Micro Commercial Co	DIODE GEN PURP 200V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123	재고305,922	200V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
SS320B-HF	Comchip Technology	DIODE SCHOTTKY 200V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 200 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 200 V	400pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BAS16HLPQ-7B	Diodes Incorporated	DIODE GEN PURP 100V 215MA 2DFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고126,489	100 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	X1-DFN1006-2	-65°C ~ 150°C
RFU01SM4ST2R	Rohm Semiconductor	DIODE GEN PURP 450V 100MA EMD2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 450 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 450 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C	패키지: -	재고358,842	450 V	100mA	1.8 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	35 ns	10 µA @ 450 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	EMD2	150°C
RBS1MM40ATR	Rohm Semiconductor	DIODE SCHOTTKY 20V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C (Max)	패키지: -	재고37,758	20 V	1A	380 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	-	Surface Mount	SOD-123F	PMDU	125°C (Max)
RB068L-30DDTE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 2A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고579	30 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 nA @ 30 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
ST2080S	SMC Diode Solutions	DIODE SCHOTTKY 80V TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고39,495	80 V	-	700 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 80 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
BAT54WS-7-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	30 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
SICPT15120Y-BP	Micro Commercial Co	SCHOTTKY DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 1.2 kV Capacitance @ Vr, F: 1552pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	15A	1.45 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1.2 kV	1552pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C

JANTX1N3673A

Microsemi Corporation

DIODE GEN PURP 1KV 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,376

1000V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

1N4934GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

재고3,136

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

M100G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,648

400V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

1N4007GPEHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고3,248

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MRA4005T3

ON Semiconductor

DIODE GEN PURP 600V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고233,868

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 175°C

R7014403XXUA

Powerex Inc.

DIODE GEN PURP 4.4KV 300A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 4400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-200AA, A-PUK

재고3,504

4400V

300A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 4400V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 200°C

1N5833

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 40A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고4,064

30V

40A

550mV @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

-

20mA @ 10V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

C4D02120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: 167pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

1200V

2A (DC)

1.8V @ 2A

No Recovery Time > 500mA (Io)

0ns

50µA @ 1200V

167pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

SBLF10L25-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 25V 10A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고4,736

25V

10A

460mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 25V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

VS-HFA04SD60SR-M3

Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,096

600V

4A

1.8V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

3µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-65°C ~ 175°C

MBR1650 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고5,824

50V

16A

750mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SF4007-TAP

Vishay Semiconductor Diodes Division

DIODE AVAL 1A 1000V SOD-57

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고6,864

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

RO 2ZV

Sanken

DIODE GEN PURP 200V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고6,864

200V

1.2A

930mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

SJPB-D9

Sanken

DIODE SCHOTTKY 90V 1A SJP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고3,280

90V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

2-SMD, J-Lead

SJP

-40°C ~ 150°C

ES1AL RFG

TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고5,040

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

10pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SRT16 A1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고3,712

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SS13HR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AC, SMA

재고7,200

30V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

PMEG040V030EPDZ

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13ns
Current - Reverse Leakage @ Vr: 120µA @ 40V
Capacitance @ Vr, F: 395pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)

패키지: 3-SMD, Flat Leads

재고6,224

40V

3A

490mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

13ns

120µA @ 40V

395pF @ 1V, 1MHz

Surface Mount

3-SMD, Flat Leads

CFP15

175°C (Max)

APT30DQ120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 30A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-3

재고6,064

1200V

30A

3.3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

320ns

100µA @ 1200V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

BAV21W-TP

Micro Commercial Co

DIODE GEN PURP 200V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123

재고305,922

200V

200mA

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 200V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

SS320B-HF

Comchip Technology

DIODE SCHOTTKY 200V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 200 V

400pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BAS16HLPQ-7B

Diodes Incorporated

DIODE GEN PURP 100V 215MA 2DFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고126,489

100 V

215mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 80 V

1.5pF @ 0V, 1MHz

Surface Mount

0402 (1006 Metric)

X1-DFN1006-2

-65°C ~ 150°C

RFU01SM4ST2R

Rohm Semiconductor

DIODE GEN PURP 450V 100MA EMD2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 450 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 450 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C

패키지: -

재고358,842

450 V

100mA

1.8 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

35 ns

10 µA @ 450 V

1.5pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

EMD2

150°C

RBS1MM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 20V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 125°C (Max)

패키지: -

재고37,758

20 V

1A

380 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 20 V

-

Surface Mount

SOD-123F

PMDU

125°C (Max)

RB068L-30DDTE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고579

30 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 nA @ 30 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

ST2080S

SMC Diode Solutions

DIODE SCHOTTKY 80V TO277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고39,495

80 V

-

700 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 80 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 150°C

BAT54WS-7-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

30 V

100mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

SICPT15120Y-BP

Micro Commercial Co

SCHOTTKY DIODES

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 25 µA @ 1.2 kV
Capacitance @ Vr, F: 1552pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1200 V

15A

1.45 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

25 µA @ 1.2 kV

1552pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C