페이지 402 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL205-T	Diodes Incorporated	DIODE GEN PURP 600V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,824	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
VS-SD600R08PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 600A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 190°C	패키지: B-8	재고3,120	800V	600A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 800V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 190°C
1N4593R	Powerex Inc.	DIODE GEN PURP 800V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5.5mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고3,776	800V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	5.5mA @ 800V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
VS-40HFL10S02M	Vishay Semiconductor Diodes Division	DIODE STD REC 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고7,184	100V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-40°C ~ 125°C
LSM120G/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 20V SMBG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고5,024	-	-	-	-	-	-	-	-	-	-	-
SS29L RQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,048	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
JANTXV1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: B, Axial	재고5,136	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
VS-VSKE91/12	Vishay Semiconductor Diodes Division	DIODE MODULE 1.2KV 100A ADDAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 314A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (3) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	패키지: ADD-A-PAK (3)	재고4,912	1200V	100A	1.55V @ 314A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 1200V	-	Chassis Mount	ADD-A-PAK (3)	ADD-A-PAK?	-40°C ~ 150°C
ER3G-TP	Micro Commercial Co	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -50°C ~ 175°C	패키지: DO-214AB, SMC	재고3,504	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-50°C ~ 175°C
FS8J	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 8A TO277-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 118pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고2,176	600V	8A	1.1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	3.37µs	5µA @ 600V	118pF @ 0V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
CSA2D-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 2A 200V DO-214AC SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고244,782	200V	1.6A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.1µs	5µA @ 200V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD214A-B320LF	Bourns Inc.	DIODE SCHOTTKY 20V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AC, SMA	재고40,614	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	250pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 125°C
MBRM140T1G	ON Semiconductor	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-216AA	재고2,870,052	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
S3DHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	1.15 V @ 2.5 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 200 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
CDBQC0140L-HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0402C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: 125°C	패키지: -	재고14,850	30 V	100mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 10 V	-	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	125°C
1N2260A	Microchip Technology	DIODE GEN PURP 800V 22A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	22A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
ES3GB-HF	Comchip Technology	DIODE GP 400V 3A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
SB15H45-7000E3-54	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 7A P600 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: 1020pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	45 V	7A	480 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 45 V	1020pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 175°C
UG06D	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 600MA TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000	200 V	600mA	950 mV @ 600 mA	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	5 µA @ 200 V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RB451UMFHTL	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD3F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90 µA @ 40 V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMD3F Operating Temperature - Junction: 125°C (Max)	패키지: -	Request a Quote	40 V	100mA	450 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	90 µA @ 40 V	6pF @ 10V, 1MHz	Surface Mount	SC-85	UMD3F	125°C (Max)
TUAU8JH	Taiwan Semiconductor Corporation	50NS, 8A, 600V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고18,000	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	80pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
PSDP30120S1_T0_00001	Panjit International Inc.	DIODE GEN PURP 1.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고6,000	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	250 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
JANTXV1N6874UTK2CS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
R403A10F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN1N6775	Microchip Technology	DIODE GEN PURP 100V 15A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 mV Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	100 V	15A	1.15 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 800 mV	300pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-65°C ~ 150°C
STTH30RQ06WY	STMicroelectronics	DIODE GEN PURP 600V 30A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Current - Reverse Leakage @ Vr: 40 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
SDH15KM	Semtech Corporation	DIODE GEN PURP 15KV 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 15000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 19.8 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 15000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	15000 V	1A	19.8 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 15000 V	-	Chassis Mount	Module	-	-55°C ~ 150°C
1N4148W	SMC Diode Solutions	DIODE GEN PURP 75V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고1,267,113	75 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	2.5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C

RL205-T

Diodes Incorporated

DIODE GEN PURP 600V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,824

600V

2A

1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

VS-SD600R08PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 600A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 190°C

패키지: B-8

재고3,120

800V

600A

1.31V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 800V

-

Chassis, Stud Mount

B-8

-40°C ~ 190°C

1N4593R

Powerex Inc.

DIODE GEN PURP 800V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5.5mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고3,776

800V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

5.5mA @ 800V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

VS-40HFL10S02M

Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고7,184

100V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-40°C ~ 125°C

LSM120G/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 20V SMBG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고5,024

-

SS29L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,048

90V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

JANTXV1N5420

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: B, Axial

재고5,136

600V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 600V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

VS-VSKE91/12

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 100A ADDAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 314A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Supplier Device Package: ADD-A-PAK?
Operating Temperature - Junction: -40°C ~ 150°C

패키지: ADD-A-PAK (3)

재고4,912

1200V

100A

1.55V @ 314A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 1200V

-

Chassis Mount

ADD-A-PAK (3)

ADD-A-PAK?

-40°C ~ 150°C

ER3G-TP

Micro Commercial Co

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -50°C ~ 175°C

패키지: DO-214AB, SMC

재고3,504

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-50°C ~ 175°C

FS8J

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO277-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고2,176

600V

8A

1.1V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

3.37µs

5µA @ 600V

118pF @ 0V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 150°C

CSA2D-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 2A 200V DO-214AC SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고244,782

200V

1.6A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2.1µs

5µA @ 200V

11pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CD214A-B320LF

Bourns Inc.

DIODE SCHOTTKY 20V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AC, SMA

재고40,614

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

250pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 125°C

MBRM140T1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-216AA

재고2,870,052

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

S3DHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

1.15 V @ 2.5 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

10 µA @ 200 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

CDBQC0140L-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0402C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 0402C/SOD-923F
Operating Temperature - Junction: 125°C

패키지: -

재고14,850

30 V

100mA

450 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 10 V

-

Surface Mount

0402 (1006 Metric)

0402C/SOD-923F

125°C

1N2260A

Microchip Technology

DIODE GEN PURP 800V 22A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

22A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

ES3GB-HF

Comchip Technology

DIODE GP 400V 3A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

SB15H45-7000E3-54

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 7A P600

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: 1020pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

45 V

7A

480 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 45 V

1020pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-55°C ~ 175°C

UG06D

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 600MA TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고15,000

200 V

600mA

950 mV @ 600 mA

Fast Recovery =< 500ns, > 200mA (Io)

15 ns

5 µA @ 200 V

9pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

RB451UMFHTL

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD3F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMD3F
Operating Temperature - Junction: 125°C (Max)

패키지: -

Request a Quote

40 V

100mA

450 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

90 µA @ 40 V

6pF @ 10V, 1MHz

Surface Mount

SC-85

UMD3F

125°C (Max)

TUAU8JH

Taiwan Semiconductor Corporation

50NS, 8A, 600V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고18,000

600 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

80pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 175°C

PSDP30120S1_T0_00001

Panjit International Inc.

DIODE GEN PURP 1.2KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고6,000

1200 V

30A

3.5 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

250 µA @ 1200 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

JANTXV1N6874UTK2CS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

R403A10F

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

JAN1N6775

Microchip Technology

DIODE GEN PURP 100V 15A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

100 V

15A

1.15 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 800 mV

300pF @ 5V, 1MHz

Through Hole

TO-257-3

TO-257

-65°C ~ 150°C

STTH30RQ06WY

STMicroelectronics

DIODE GEN PURP 600V 30A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

600 V

30A

2.95 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

55 ns

40 µA @ 600 V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

-40°C ~ 175°C

SDH15KM

Semtech Corporation

DIODE GEN PURP 15KV 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 15000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 19.8 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 1 µA @ 15000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

15000 V

1A

19.8 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

1 µA @ 15000 V

-

Chassis Mount

Module

-

-55°C ~ 150°C

1N4148W

SMC Diode Solutions

DIODE GEN PURP 75V 250MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고1,267,113

75 V

250mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

2.5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C