페이지 404 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10D-6453M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,800	-	-	-	-	-	-	-	-	-	-	-
VS-1N5817	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 110pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고8,232	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	110pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
BY229-800HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2	재고3,760	800V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	10µA @ 800V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
SBM1040-13-F	Diodes Incorporated	DIODE SCHOTTKY 40V 10A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 35V Capacitance @ Vr, F: 700pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -65°C ~ 150°C	패키지: Powermite?3	재고548,640	40V	10A	510mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 35V	700pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-65°C ~ 150°C
MA2711100L	Panasonic Electronic Components	DIODE GEN 80V 100MA SSSMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F2 Operating Temperature - Junction: 150°C (Max)	패키지: 2-SMD, Flat Lead	재고1,765,080	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F2	150°C (Max)
1N6700US	Microsemi Corporation	DIODE SCHOTTKY 20V 5A D5C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 470mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, C Supplier Device Package: D-5C Operating Temperature - Junction: -65°C ~ 125°C	패키지: SQ-MELF, C	재고4,384	20V	5A	470mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	SQ-MELF, C	D-5C	-65°C ~ 125°C
BYM36C-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-64, Axial	재고32,640	600V	3A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 600V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
1N4936G R0G	TSC America Inc.	DIODE, FAST, 1A, 400V, 200NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,512	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS16-G3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고6,240	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
STTH2006W	STMicroelectronics	DIODE GEN PURP 600V 20A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max)	패키지: DO-247-2 (Straight Leads)	재고20,592	600V	20A	1.75V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	25µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
FSV560	Fairchild/ON Semiconductor	DIODE RECT SCHOTKY 60V 5A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고7,136	60V	5A	670mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
SCS108AGC	Rohm Semiconductor	DIODE SCHOTTKY 600V 8A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 160µA @ 600V Capacitance @ Vr, F: 345pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고15,924	600V	8A	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	160µA @ 600V	345pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
M7	EVVO	DIODE GEN PURP 1KV 1A SMAF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1 kV Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고11,619	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1 kV	15pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
S2KA	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고45,000	800 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 800 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SDUR80P65WT	SMC Diode Solutions	80A,650V,TO-247AD, ULTRAFAST REC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS15HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 50V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	50 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 50 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
1SS81RE-E	Renesas Electronics Corporation	DIODE 150V 200MA DO35 Diode Type: - Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: - Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 200 nA @ 150 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	150 V	200mA	1 V @ 100 mA	-	100 ns	200 nA @ 150 V	1.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C
S3DBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	200 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 200 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SBRD10200	SMC Diode Solutions	DIODE SCHOTTKY 200V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고130,113	200 V	10A	950 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	150pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
RHRG7570	Harris Corporation	DIODE AVALANCHE 700V 75A TO247 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 500 µA @ 700 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	700 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 700 V	-	Through Hole	TO-247-3	TO-247	-65°C ~ 175°C
1PS76SB40-QF	Nexperia USA Inc.	1PS76SB40-Q/SOD323/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	120mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
1N6941UTK3CS-TR	Microchip Technology	DIODE SCHOTTKY 30V 150A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	30 V	150A	500 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	7500pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
SKL33	Diotec Semiconductor	SCHOTTKY SOD123FL 30V 3A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F (SMF) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	30 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C
SDS065J010S3-ISBRH	Luminus Devices Inc.	DIODE 650V-10A DFN8*8-4L Diode Type: - Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 4-PowerVSFN Supplier Device Package: 4-DFN (8x8) Operating Temperature - Junction: -	패키지: -	Request a Quote	650 V	10A	-	-	-	-	-	Surface Mount	4-PowerVSFN	4-DFN (8x8)	-
SIDC59D170HX1SA2	Infineon Technologies	DIODE GP 1.7KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1700 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1700 V	100A	1.8 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
V30K60-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 5.2A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5.2A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V Capacitance @ Vr, F: 3300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	60 V	5.2A	650 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 60 V	3300pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 150°C
JANS1N5415	Microchip Technology	DIODE GEN PURP 50V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	50 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 150 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SK34HE3-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,940	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C

GP10D-6453M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,800

-

VS-1N5817

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 110pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고8,232

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

110pF @ 5V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

BY229-800HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2

재고3,760

800V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

145ns

10µA @ 800V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

SBM1040-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 10A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 35V
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Powermite?3
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -65°C ~ 150°C

패키지: Powermite?3

재고548,640

40V

10A

510mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 35V

700pF @ 4V, 1MHz

Surface Mount

Powermite?3

Powermite 3

-65°C ~ 150°C

MA2711100L

Panasonic Electronic Components

DIODE GEN 80V 100MA SSSMINI2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F2
Operating Temperature - Junction: 150°C (Max)

패키지: 2-SMD, Flat Lead

재고1,765,080

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F2

150°C (Max)

1N6700US

Microsemi Corporation

DIODE SCHOTTKY 20V 5A D5C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Supplier Device Package: D-5C
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SQ-MELF, C

재고4,384

20V

5A

470mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

SQ-MELF, C

D-5C

-65°C ~ 125°C

BYM36C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

재고32,640

600V

3A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 600V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

1N4936G R0G

TSC America Inc.

DIODE, FAST, 1A, 400V, 200NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,512

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

BAS16-G3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고6,240

75V

150mA

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

6ns

1µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

STTH2006W

STMicroelectronics

DIODE GEN PURP 600V 20A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)

패키지: DO-247-2 (Straight Leads)

재고20,592

600V

20A

1.75V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

25µA @ 600V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

175°C (Max)

FSV560

Fairchild/ON Semiconductor

DIODE RECT SCHOTKY 60V 5A TO277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고7,136

60V

5A

670mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 150°C

SCS108AGC

Rohm Semiconductor

DIODE SCHOTTKY 600V 8A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 160µA @ 600V
Capacitance @ Vr, F: 345pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고15,924

600V

8A

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

160µA @ 600V

345pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

M7

EVVO

DIODE GEN PURP 1KV 1A SMAF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고11,619

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1 kV

15pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

S2KA

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고45,000

800 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 800 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SDUR80P65WT

SMC Diode Solutions

80A,650V,TO-247AD, ULTRAFAST REC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SS15HE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 50V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

50 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 50 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

1SS81RE-E

Renesas Electronics Corporation

DIODE 150V 200MA DO35

Diode Type: -
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: -
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 200 nA @ 150 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

150 V

200mA

1 V @ 100 mA

-

100 ns

200 nA @ 150 V

1.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C

S3DBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

200 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 200 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SBRD10200

SMC Diode Solutions

DIODE SCHOTTKY 200V 10A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고130,113

200 V

10A

950 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

150pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

RHRG7570

Harris Corporation

DIODE AVALANCHE 700V 75A TO247

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 700 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 500 µA @ 700 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

700 V

75A

3 V @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

500 µA @ 700 V

-

Through Hole

TO-247-3

TO-247

-65°C ~ 175°C

1PS76SB40-QF

Nexperia USA Inc.

1PS76SB40-Q/SOD323/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

120mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

1N6941UTK3CS-TR

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

30 V

150A

500 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 30 V

7500pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 150°C

SKL33

Diotec Semiconductor

SCHOTTKY SOD123FL 30V 3A 150C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F (SMF)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

30 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

-

Surface Mount

SOD-123F

SOD-123F (SMF)

-50°C ~ 150°C

SDS065J010S3-ISBRH

Luminus Devices Inc.

DIODE 650V-10A DFN8*8-4L

Diode Type: -
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 4-PowerVSFN
Supplier Device Package: 4-DFN (8x8)
Operating Temperature - Junction: -

패키지: -

Request a Quote

650 V

10A

-

Surface Mount

4-PowerVSFN

4-DFN (8x8)

-

SIDC59D170HX1SA2

Infineon Technologies

DIODE GP 1.7KV 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1700 V

100A

1.8 V @ 100 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 1700 V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

V30K60-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5.2A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5.2A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Capacitance @ Vr, F: 3300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

60 V

5.2A

650 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.2 mA @ 60 V

3300pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 150°C

JANS1N5415

Microchip Technology

DIODE GEN PURP 50V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

50 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 150 V

-

Through Hole

B, Axial

-65°C ~ 175°C

SK34HE3-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고8,940

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

250pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C