페이지 420 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GI810-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고7,008	-	-	-	-	-	-	-	-	-	-	-
MURH7010R	GeneSiC Semiconductor	DIODE FAST REC 100V 70A D67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고3,344	100V	70A	1V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 100V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
BYD13KGP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고3,568	800V	1A	-	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BAT1502LSE6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSSLP-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 4V Current - Average Rectified (Io): 110mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1V Capacitance @ Vr, F: 350pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: PG-TSSLP-2-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: 2-XFDFN	재고3,488	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XFDFN	PG-TSSLP-2-3	-55°C ~ 150°C
D850N28T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECITIFER 2800V 1900A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,344	-	-	-	-	-	-	-	-	-	-	-
DS35-12A	IXYS	DIODE GEN PURP 1.2KV 49A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 49A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고5,600	1200V	49A	1.55V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 1200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 180°C
JAN1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, B	재고6,944	800V	3A	1.3V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
RG 2A	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 500µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고6,528	600V	1A	2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	500µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
12TQ035STR	SMC Diode Solutions	DIODE SCHOTTKY 35V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,264	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 35V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
SK32B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AA, SMB	재고2,656	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
GP10Q-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,760	1200V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
HS2AA R3G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 50V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,744	50V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RBR3MM60ATR	Rohm Semiconductor	DIODE SCHOTTKY 60V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고7,312	60V	3A	660mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
BYC30X-600P,127	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2 Full Pack, Isolated Tab	재고37,542	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	175°C (Max)
VS-20ETF06SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,144	600V	20A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	100µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
1N2063	Solid State Inc.	DIODE GEN PURP 500V 275A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	패키지: -	Request a Quote	500 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 500 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
QRT10A06_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	10A	2.4 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	32 ns	1 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
HERAF1007GH	Taiwan Semiconductor Corporation	80NS, 10A, 800V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	800 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 800 V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MSASC25W45KS-TR	Microchip Technology	DIODE POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
85HQ035	Microchip Technology	DIODE SCHOTTKY 35V 80A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 35 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	35 V	80A	740 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 35 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
MBRS1060	Taiwan Semiconductor Corporation	10A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	60 V	10A	800 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
1N5395GP-AP	Micro Commercial Co	DIODE GEN PURP 400V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
UG1GPL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
SL26PL-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고5,820	60 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
UF4012GP-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1200 V	1A	1.85 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 1200 V	45pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
EP05FA20	KYOCERA AVX	DIODE GEN PURP 200V 500MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	200 V	500mA	950 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 200 V	-	Surface Mount	SOD-123	SOD-123	-40°C ~ 150°C
S25150	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SM5818PLHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 20 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 20 V	50pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 125°C

GI810-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고7,008

-

MURH7010R

GeneSiC Semiconductor

DIODE FAST REC 100V 70A D67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고3,344

100V

70A

1V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 100V

-

Chassis Mount

D-67

-55°C ~ 150°C

BYD13KGP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고3,568

800V

1A

-

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

BAT1502LSE6433XTMA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSSLP-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 4V
Current - Average Rectified (Io): 110mA (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1V
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: PG-TSSLP-2-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: 2-XFDFN

재고3,488

4V

110mA (DC)

410mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 1V

350pF @ 0V, 1MHz

Surface Mount

2-XFDFN

PG-TSSLP-2-3

-55°C ~ 150°C

D850N28T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECITIFER 2800V 1900A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,344

-

DS35-12A

IXYS

DIODE GEN PURP 1.2KV 49A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 49A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고5,600

1200V

49A

1.55V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

4mA @ 1200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 180°C

JAN1N5553US

Microsemi Corporation

DIODE GEN PURP 800V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, B

재고6,944

800V

3A

1.3V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

1µA @ 800V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

RG 2A

Sanken

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 500µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고6,528

600V

1A

2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

500µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

12TQ035STR

SMC Diode Solutions

DIODE SCHOTTKY 35V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,264

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 35V

900pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

SK32B R5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

재고2,656

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

GP10Q-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,760

1200V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1200V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

HS2AA R3G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 50V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,744

50V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RBR3MM60ATR

Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고7,312

60V

3A

660mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

BYC30X-600P,127

WeEn Semiconductors

DIODE GEN PURP 600V 30A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2 Full Pack, Isolated Tab

재고37,542

600V

30A

1.8V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

175°C (Max)

VS-20ETF06SPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,144

600V

20A

1.05V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

100µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 150°C

1N2063

Solid State Inc.

DIODE GEN PURP 500V 275A DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

패키지: -

Request a Quote

500 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 500 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C

QRT10A06_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

10A

2.4 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

32 ns

1 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

HERAF1007GH

Taiwan Semiconductor Corporation

80NS, 10A, 800V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

800 V

10A

1.7 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 800 V

60pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

MSASC25W45KS-TR

Microchip Technology

DIODE POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

85HQ035

Microchip Technology

DIODE SCHOTTKY 35V 80A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

35 V

80A

740 mV @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 35 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C

MBRS1060

Taiwan Semiconductor Corporation

10A, 60V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

60 V

10A

800 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

1N5395GP-AP

Micro Commercial Co

DIODE GEN PURP 400V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1.5A

1.4 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

UG1GPL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

SL26PL-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 2A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고5,820

60 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

UF4012GP-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1200 V

1A

1.85 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 1200 V

45pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

EP05FA20

KYOCERA AVX

DIODE GEN PURP 200V 500MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

200 V

500mA

950 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 200 V

-

Surface Mount

SOD-123

-40°C ~ 150°C

S25150

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SM5818PLHE3-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

20 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 20 V

50pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 125°C