페이지 421 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
IDH09SG60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 9A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 9A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 600V
  • Capacitance @ Vr, F: 280pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고6,928
600V
9A (DC)
2.1V @ 9A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
SS24S-61HE3J_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AC, SMA
재고3,328
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
130pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ESH2PBHE3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-220AA
재고5,200
100V
2A
980mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
EGP50F-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AA, DO-27, Axial
재고5,200
300V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
75pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 150°C
ZHCS350TC
Diodes Incorporated

DIODE SCHOTTKY 40V 350MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 350mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.6ns
  • Current - Reverse Leakage @ Vr: 12µA @ 30V
  • Capacitance @ Vr, F: 6pF @ 25V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: 125°C (Max)
패키지: SC-79, SOD-523
재고6,368
40V
350mA (DC)
810mV @ 350mA
Fast Recovery =< 500ns, > 200mA (Io)
1.6ns
12µA @ 30V
6pF @ 25V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
125°C (Max)
VSKEL240-25S30
Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 240A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: 3-MAGN-A-PAK?
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -
패키지: 3-MAGN-A-PAK?
재고6,304
2500V
240A
-
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 2500V
-
Chassis Mount
3-MAGN-A-PAK?
MAGN-A-PAK?
-
HER305-T
Diodes Incorporated

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고2,400
400V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
MUR2540
GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-203AA, DO-4, Stud
재고7,584
400V
25A
1.3V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-55°C ~ 150°C
SBRT15U100SP5-7
Diodes Incorporated

DIODE SBR 100V 15A POWERDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: PowerDI? 5
재고3,152
100V
15A
700mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-65°C ~ 150°C
SK54BHR5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고6,848
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS3GHM6G
TSC America Inc.

DIODE, FAST, 3A, 400V, 150NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고2,320
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SDUR1060
SMC Diode Solutions

DIODE GEN PURP 600V TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2
재고22,920
600V
-
2.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VS-150U100D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 150A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: DO-205AA, DO-8, Stud
재고4,432
1000V
150A
1.47V @ 600A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1000V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
hot S2D
S2D
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AA, SMB
재고1,714,524
200V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 150°C
SD101CW-E3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 125°C (Max)
패키지: SOD-123
재고190,110
40V
30mA (DC)
900mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 30V
2.2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
125°C (Max)
SIC0260Y-BP
Micro Commercial Co

SCHOTTKY DIODES

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 7.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 650 V
  • Capacitance @ Vr, F: 84pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
650 V
7.6A
1.6 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
84pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SUR722LFG
onsemi

REC SURM ULTRFST SPCL LF

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N6080US-TR
Microchip Technology

UFR,FRR

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, C
  • Supplier Device Package: D-5C
  • Operating Temperature - Junction: -65°C ~ 155°C
패키지: -
Request a Quote
100 V
2A
1.5 V @ 37.7 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 100 V
-
Surface Mount
SQ-MELF, C
D-5C
-65°C ~ 155°C
C6D10065G
Wolfspeed, Inc.

DIODE SIL CARB 650V 36A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 611pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고2,472
650 V
36A
1.4 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 650 V
611pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
RKD703KK-R6
Renesas Electronics Corporation

DIODE SCHOTTKY 30V 100MA 2SFP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Capacitance @ Vr, F: 5pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: 2-SFP
  • Operating Temperature - Junction: 125°C (Max)
패키지: -
Request a Quote
30 V
100mA
600 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
50 µA @ 30 V
5pF @ 1V, 1MHz
Surface Mount
2-SMD, Flat Lead
2-SFP
125°C (Max)
1N5186-TR
Microchip Technology

DIODE GEN PURP 100V 3A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: B, Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
100 V
3A
1.5 V @ 9 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
2 µA @ 100 V
-
Through Hole
B, Axial
B, Axial
-65°C ~ 175°C
IDK16G120C5XTMA1
Infineon Technologies

DIODE SIL CARB 1.2KV 40A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고1,794
1200 V
40A
1.95 V @ 16 A
No Recovery Time > 500mA (Io)
-
80 µA @ 1200 V
730pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
RF301BM2SFHTL
Rohm Semiconductor

DIODE GEN PURP 200V 3A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고8,535
200 V
3A
930 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
ES2B_R1_00001
Panjit International Inc.

DIODE GEN PURP 100V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고4,590
100 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 100 V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
HER303-TP
Micro Commercial Co

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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200 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 200 V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR210
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 2A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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100 V
2A
850 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
QRT1506_T0_00001
Panjit International Inc.

DIODE GEN PURP 600V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
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600 V
15A
2.35 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
3 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
S1GHM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
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400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.8 µs
1 µA @ 400 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C