페이지 829 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UH6PJ-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고6,048
600V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 600V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
FGP50D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,032
200V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
PR3001G-T
Diodes Incorporated

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AD, Axial
재고6,480
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
STTH2002G
STMicroelectronics

DIODE GEN PURP 200V 20A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,352
200V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
2A05G-T
Diodes Incorporated

DIODE GEN PURP 600V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고6,464
600V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
40pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 175°C
hot 60EPU06
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 81ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고16,752
600V
60A
1.68V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
81ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 175°C
FR16MR05
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-203AA, DO-4, Stud
재고3,632
1000V
16A
1.1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
FMC-26UA
Sanken

DIODE GEN PURP 1.2KV 3A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 4V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 500µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-220-2 Full Pack
재고3,040
1200V
3A
4V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
500µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
BYR29X-800PQ
WeEn Semiconductors

BYR29X-800P/TO-220F/STANDARD M

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: 175°C (Max)
패키지: TO-220-2 Full Pack
재고2,448
800V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
10µA @ 800V
-
Through Hole
TO-220-2 Full Pack
TO-220F
175°C (Max)
UH3BHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-214AB, SMC
재고4,992
100V
3A
1.05V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 175°C
NRVUA160VT3G
ON Semiconductor

DIODE ULT FAST 1A 600V SMA2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AC, SMA
재고7,856
600V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
EM 1
Sanken

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: Axial
재고5,520
400V
1A
970mV @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
RS1PBHM3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-220AA
재고4,192
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
RMPG06KHE3_A/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: MPG06, Axial
재고3,632
800V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 800V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
SS29LHRFG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-219AB
재고6,384
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
CMR2-02 TR13
Central Semiconductor Corp

DIODE GEN PURP 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AA, SMB
재고25,218
200V
2A
1.1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
2.5µs
5µA @ 200V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
hot DAN212KT146
Rohm Semiconductor

DIODE GEN PURP 80V 100MA SMD3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 70V
  • Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMD3
  • Operating Temperature - Junction: 150°C (Max)
패키지: TO-236-3, SC-59, SOT-23-3
재고69,600
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 70V
3.5pF @ 6V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMD3
150°C (Max)
MBR5U60-TP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
60 V
5A
550 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
VSSAF522HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2A DO221AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Capacitance @ Vr, F: 240pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고40,110
200 V
2A
900 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
240pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 175°C
FESF8HTHE3_A-P
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 500V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
500 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 500 V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
DPF30P600HR
IXYS

DIODE GEN PURP 600V 30A ISO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 600 V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
30A
1.62 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
500 µA @ 600 V
26pF @ 400V, 1MHz
Through Hole
TO-247-3
ISO247
-55°C ~ 175°C
MBR1050_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
50 V
10A
750 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 50 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MBR3150_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 150V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
150 V
3A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 150 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
SS10200HE_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 200V 1A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 200 V
  • Capacitance @ Vr, F: 85pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고48,378
200 V
1A
850 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 200 V
85pF @ 0V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
JANTX1N6621-TR
Microchip Technology

DIODE GEN PURP 440V 2A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 440 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 440 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
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440 V
2A
1.4 V @ 1.2 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
500 nA @ 440 V
10pF @ 10V, 1MHz
Through Hole
A, Axial
A, Axial
-65°C ~ 150°C
RBQ30NS45BTL
Rohm Semiconductor

DIODE SCHOTTKY 45V 30A LPDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 590 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C
패키지: -
재고2,115
45 V
30A
590 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 µA @ 45 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C
R4280IL
Microchip Technology

DIODE GP REV 800V 125A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
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800 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 800 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
VS-15ETU12-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.78 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 167 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
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1200 V
15A
2.78 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
167 ns
80 µA @ 1200 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C