페이지 831 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N6391	Microsemi Corporation	DIODE SCHOTTKY 45V 22.5A DO203AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 22.5A Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 45V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고4,656	45V	22.5A	680mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 45V	2000pF @ 5V, 1MHz	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-55°C ~ 175°C
VS-8EWS10STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,776	1000V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	100µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
MBRB10H100HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,960	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
R5101010XXWA	Powerex Inc.	DIODE GEN PURP 1KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고7,056	1000V	100A	1.55V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
MMBD1401_D87Z	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 175V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,528	200V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
A170RP	Powerex Inc.	DIODE GEN PURP 1KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고5,136	1000V	100A	1.3V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
S150K	GeneSiC Semiconductor	DIODE GEN PURP 800V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고7,824	800V	150A	1.2V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
VS-88HF120	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고2,720	1200V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
SR810HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고5,616	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SSL12 M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AC, SMA	재고3,328	20V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
RGL41M-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고2,368	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SF13G B0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,800	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS2JA M2G	TSC America Inc.	DIODE, FAST, 1.5A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,392	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-E4PH3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고2,816	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
CFSH-4 TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 200MA SOD882 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: SOD-882 Operating Temperature - Junction: -65°C ~ 125°C	패키지: SOD-882	재고4,336	40V	200mA	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	SOD-882	SOD-882	-65°C ~ 125°C
VS-40EPF06-M3	Vishay Semiconductor Diodes Division	DIODE INPUT 40 TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-2	재고14,100	600V	40A	1.25V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
RB411VA-50TR	Rohm Semiconductor	DIODE SCHOTTKY 20V 500MA TUMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 20pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2 Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, Flat Lead	재고208,800	20V	500mA	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 10V	20pF @ 10V, 1MHz	Surface Mount	2-SMD, Flat Lead	TUMD2	125°C (Max)
SK53BHE3-LTP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	30 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
DMA10P1600UZ-TUB	IXYS	DIODE GEN PURP 1.6KV 10A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: 1pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1600 V	10A	1.55 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1600 V	1pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
1N4248-TR	Microchip Technology	DIODE GEN PURP 800V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
W108CED180	IXYS	DIODE GEN PURP 1.8KV 10815A W112 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 10815A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: W112 Operating Temperature - Junction: -	패키지: -	Request a Quote	1800 V	10815A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	DO-200AE	W112	-
IDWD150E65E7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A Speed: Fast Recovery =< 500ns, > 5A (Io) Reverse Recovery Time (trr): 97 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: PG-TO247-2-2 Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고387	650 V	200A	2.1 V @ 150 A	Fast Recovery =< 500ns, > 5A (Io)	97 ns	20 µA @ 650 V	-	Through Hole	TO-247-2	PG-TO247-2-2	-40°C ~ 175°C
HVL2010BRP	onsemi	1 CHANNEL ESD PROTECTOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UG1BPL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
SS24B	MDD	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -50°C ~ 125°C	패키지: -	Request a Quote	40 V	2A	550 mV @ 2 A	-	-	-	220pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-50°C ~ 125°C
MUR850	Harris Corporation	DIODE GEN PURP 500V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 500 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	500 V	8A	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 µA @ 500 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BAS21QC-QZ	Nexperia USA Inc.	DIODE GP 200V 250MA DFN1412D-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3 Operating Temperature - Junction: 150°C	패키지: -	재고15,000	200 V	250mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3	150°C
B0520WS-7-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 20 V Capacitance @ Vr, F: 58pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	20 V	500mA	430 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 20 V	58pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C

JAN1N6391

Microsemi Corporation

DIODE SCHOTTKY 45V 22.5A DO203AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 22.5A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 45V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고4,656

45V

22.5A

680mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 45V

2000pF @ 5V, 1MHz

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-55°C ~ 175°C

VS-8EWS10STRLPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,776

1000V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

100µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

MBRB10H100HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,960

100V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

R5101010XXWA

Powerex Inc.

DIODE GEN PURP 1KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고7,056

1000V

100A

1.55V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 1000V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

MMBD1401_D87Z

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 175V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,528

200V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 175V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C (Max)

A170RP

Powerex Inc.

DIODE GEN PURP 1KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고5,136

1000V

100A

1.3V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 1000V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 200°C

S150K

GeneSiC Semiconductor

DIODE GEN PURP 800V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고7,824

800V

150A

1.2V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

VS-88HF120

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고2,720

1200V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

SR810HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고5,616

100V

8A

920mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SSL12 M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 390mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AC, SMA

재고3,328

20V

1A

390mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

RGL41M-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고2,368

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SF13G B0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,800

150V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RS2JA M2G

TSC America Inc.

DIODE, FAST, 1.5A, 600V, 250NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,392

600V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

VS-E4PH3006L-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고2,816

600V

30A

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

50µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

CFSH-4 TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOD882

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: SOD-882
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SOD-882

재고4,336

40V

200mA

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

5ns

200nA @ 30V

5pF @ 0V, 1MHz

Surface Mount

SOD-882

-65°C ~ 125°C

VS-40EPF06-M3

Vishay Semiconductor Diodes Division

DIODE INPUT 40 TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-2

재고14,100

600V

40A

1.25V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 600V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

RB411VA-50TR

Rohm Semiconductor

DIODE SCHOTTKY 20V 500MA TUMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, Flat Lead

재고208,800

20V

500mA

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 10V

20pF @ 10V, 1MHz

Surface Mount

2-SMD, Flat Lead

TUMD2

125°C (Max)

SK53BHE3-LTP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

30 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

DMA10P1600UZ-TUB

IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Capacitance @ Vr, F: 1pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1600 V

10A

1.55 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1600 V

1pF @ 400V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

1N4248-TR

Microchip Technology

DIODE GEN PURP 800V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

800 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

1 µA @ 800 V

-

Through Hole

A, Axial

-65°C ~ 175°C

W108CED180

IXYS

DIODE GEN PURP 1.8KV 10815A W112

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 10815A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: W112
Operating Temperature - Junction: -

패키지: -

Request a Quote

1800 V

10815A

-

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

DO-200AE

W112

-

IDWD150E65E7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 97 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고387

650 V

200A

2.1 V @ 150 A

Fast Recovery =< 500ns, > 5A (Io)

97 ns

20 µA @ 650 V

-

Through Hole

TO-247-2

PG-TO247-2-2

-40°C ~ 175°C

HVL2010BRP

onsemi

1 CHANNEL ESD PROTECTOR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

UG1BPL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

SS24B

MDD

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -50°C ~ 125°C

패키지: -

Request a Quote

40 V

2A

550 mV @ 2 A

-

220pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-50°C ~ 125°C

MUR850

Harris Corporation

DIODE GEN PURP 500V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

500 V

8A

1.5 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

500 µA @ 500 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

BAS21QC-QZ

Nexperia USA Inc.

DIODE GP 200V 250MA DFN1412D-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3
Operating Temperature - Junction: 150°C

패키지: -

재고15,000

200 V

250mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

150°C

B0520WS-7-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Capacitance @ Vr, F: 58pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

20 V

500mA

430 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 20 V

58pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C