페이지 3 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

기록 2,060
페이지  3/74
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR198SH6827XTSA1
Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 190MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고5,696
100mA
50V
47k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
-
190MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BCR183SE6433BTMA1
Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고6,960
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
-
200MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BCR10PNB6327XT
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고4,496
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
-
130MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고2,304
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz, 250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
PBLS4004V,115
NXP

TRANS NPN PREBIAS/PNP SOT666

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 300MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고7,136
100mA, 500mA
50V, 40V
22k
22k
60 @ 5mA, 5V / 150 @ 100mA, 2V
150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
1µA
300MHz
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
EMA6DXV5T1G
ON Semiconductor

TRANS 2PNP PREBIAS 0.23W SOT553

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
패키지: SOT-553
재고7,664
100mA
50V
47k
-
160 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
230mW
Surface Mount
SOT-553
SOT-553
PUMD24,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고5,088
20mA
50V
100k
100k
80 @ 5mA, 5V
150mV @ 250µA, 5mA
1µA
-
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
RN4607(TE85L,F)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고2,096
100mA
50V
10k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN2711(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: 5-TSSOP, SC-70-5, SOT-353
재고6,896
100mA
50V
10k
-
400 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
PQMD3Z
Nexperia USA Inc.

TRANS NPN/PNP RET 6DFN

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 230mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
패키지: 6-XFDFN Exposed Pad
재고2,688
100mA
50V
10k
10k
30 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
230MHz, 180MHz
230mW
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
DMA564040R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고3,184
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
XN0111600L
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G1
패키지: SC-74A, SOT-753
재고6,096
100mA
50V
4.7k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
300mW
Surface Mount
SC-74A, SOT-753
Mini5-G1
DDA124EU-7
Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고5,632
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
XP0421500L
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
패키지: 6-TSSOP, SC-88, SOT-363
재고26,490
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
PBLS4001Y,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 300MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고23,004
100mA, 500mA
50V, 40V
2.2k
2.2k
30 @ 20mA, 5V / 150 @ 100mA, 2V
150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
1µA
300MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PUMB10,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W 6TSSOP

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고89,142
100mA
50V
2.2k
47k
100 @ 10mA, 5V
100mV @ 250µA, 5mA
100nA
180MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
DMA261020R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G3-B
패키지: SC-74A, SOT-753
재고25,452
100mA
50V
22k
22k
60 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
SC-74A, SOT-753
Mini5-G3-B
hot NSBC114EPDXV6T1G
ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고126,276
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
DMC261020R
Panasonic Electronic Components

TRANS 2NPN PREBIAS 0.3W MINI5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G3-B
패키지: SC-74A, SOT-753
재고29,880
100mA
50V
22k
22k
60 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
SC-74A, SOT-753
Mini5-G3-B
PIMN31,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.42W 6TSOP

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 420mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고43,956
500mA
50V
1k
10k
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
420mW
Surface Mount
SC-74, SOT-457
6-TSOP
NSBC143TDXV6T1G
onsemi

TRANS PREBIAS 2NPN 50V SOT563

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
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100mA
50V
4.7kOhms
-
160 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
NSBC123JDXV6T1G
onsemi

TRANS PREBIAS 2NPN 50V SOT563

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
재고23,850
100mA
50V
2.2kOhms
47kOhms
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
PUMD3-QF
Nexperia USA Inc.

PUMD3-Q/SOT363/SC-88

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
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100mA
50V
10kOhms
10kOhms
30 @ 5mA, 5V
100mV @ 500µA, 10mA
100nA
230MHz, 180MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
EMF23XV6T5G
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR,

  • Transistor Type: 1 NPN - Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 60V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 120 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA, 500pA (ICBO)
  • Frequency - Transition: 140MHz
  • Power - Max: 357mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
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100mA
50V, 60V
10kOhms
10kOhms
35 @ 5mA, 10V / 120 @ 1mA, 6V
250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
500nA, 500pA (ICBO)
140MHz
357mW
Surface Mount
SOT-563, SOT-666
SOT-563
SMUN5216DW1T1G-M02
onsemi

DUAL NPN BIPOLAR DIGITAL TRANSIS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
PUMB3H-QX
Nexperia USA Inc.

PUMB3H-QX

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180MHz
  • Power - Max: 240mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
4.7kOhms
-
200 @ 1mA, 5V
100mV @ 500µA, 10mA
100nA
180MHz
240mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PUMB3H-QF
Nexperia USA Inc.

PUMB3H-QF

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180MHz
  • Power - Max: 240mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
4.7kOhms
-
200 @ 1mA, 5V
100mV @ 500µA, 10mA
100nA
180MHz
240mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
RN2907-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고18,000
100mA
50V
10kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6