페이지 5 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
IMH20TR1	ON Semiconductor	TRANS 2NPN PREBIAS 0.3W SC74R Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 15V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74R	패키지: SC-74, SOT-457	재고7,056	600mA	15V	2.2k	-	100 @ 50mA, 5V	80mV @ 2.5mA, 50mA	-	-	300mW	Surface Mount	SC-74, SOT-457	SC-74R
NP0G3A000A	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSSMINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SSSMini6-F1	패키지: SOT-963	재고7,600	80mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	125mW	Surface Mount	SOT-963	SSSMini6-F1
NSBC123EPDXV6T1	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고3,264	100mA	50V	2.2k	2.2k	8 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
BCR48PNH6327XTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 70mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 100MHz, 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고4,704	70mA, 100mA	50V	47k, 2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	100MHz, 200MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
NSTB1002DXV5T1G	ON Semiconductor	TRANS NPN PREBIAS/PNP 0.5W SOT55 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 200mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	패키지: SOT-553	재고36,600	100mA, 200mA	50V, 40V	47k	47k	80 @ 5mA, 10V / 100 @ 1mA, 10V	250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA	500nA	250MHz	500mW	Surface Mount	SOT-553	SOT-553
NSBC143EDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.339W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 339mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고7,056	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	339mW	Surface Mount	SOT-963	SOT-963
NSBC114YDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.339W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 339mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고168,000	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	339mW	Surface Mount	SOT-963	SOT-963
PBLS4004D,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 0.6W 6TSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 700mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 300 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 150MHz Power - Max: 600mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고6,496	100mA, 700mA	50V, 40V	22k	22k	60 @ 5mA, 5V / 300 @ 100mA, 5V	150mV @ 500µA, 10mA / 310mV @ 100mA, 1A	1µA, 100nA	150MHz	600mW	Surface Mount	SC-74, SOT-457	6-TSOP
IMH8AT108	Rohm Semiconductor	TRANS PREBIAS DUAL NPN SMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	패키지: SC-74, SOT-457	재고26,400	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	-	250MHz	300mW	Surface Mount	SC-74, SOT-457	SMT6
UMA4NTR	Rohm Semiconductor	TRANS PREBIAS DUAL PNP UMT5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	패키지: 5-TSSOP, SC-70-5, SOT-353	재고1,210,560	100mA	50V	10k	-	100 @ 1A, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	UMT5
DMG963010R	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F4-B	패키지: SOT-665	재고6,256	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-665	SSMini5-F4-B
XP0111300L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SMini5-G1	패키지: 5-TSSOP, SC-70-5, SOT-353	재고3,632	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SMini5-G1
RN1902FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: SOT-563, SOT-666	재고35,862	100mA	50V	10k	1k	30 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
DMA9640T0R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SSMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	패키지: SOT-563, SOT-666	재고213,738	100mA	50V	22k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
RN4907,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고27,390	100mA	50V	10k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
PUMH10,125	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고6,400	100mA	50V	2.2k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
MUN5235DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,051,804	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
NSBC143ZPDXV6T	onsemi	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
RN4904FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고24,000	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
NSBC143TPDXV	onsemi	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	100mA	50V	4.7kOhms	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
RN46A1-TE85L-F	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR=22KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms, 10kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	패키지: -	Request a Quote	100mA	50V	22kOhms, 10kOhms	22kOhms, 10kOhms	70 @ 10mA, 5V / 50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	300mW	Surface Mount	SC-74, SOT-457	SM6
RN2905-LF-CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고8,940	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
NHUMB9X	Nexperia USA Inc.	TRANS PREBIAS 2PNP 80V 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	재고54,000	100mA	80V	10kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	150MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMH2FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
PUMD48-ZLX	Nexperia USA Inc.	TRANS PREBIAS Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms, 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	50V	47kOhms, 2.2kOhms	47kOhms	80 @ 5mA, 5V / 100 @ 10mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz, 180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMD10-QH	Nexperia USA Inc.	PUMD10-Q/SOT363/SC-88 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz, 180MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	50V	2.2kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	230MHz, 180MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ACX114EUQ-7R	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 3K Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 270mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고9,000	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	270mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PUMB2-ZLX	NXP	PUMB2/ZLX Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IMH20TR1

ON Semiconductor

TRANS 2NPN PREBIAS 0.3W SC74R

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 15V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74R

패키지: SC-74, SOT-457

재고7,056

600mA

15V

2.2k

-

100 @ 50mA, 5V

80mV @ 2.5mA, 50mA

-

300mW

Surface Mount

SC-74, SOT-457

SC-74R

NP0G3A000A

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSSMINI6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SSSMini6-F1

패키지: SOT-963

재고7,600

80mA

50V

47k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz, 80MHz

125mW

Surface Mount

SOT-963

SSSMini6-F1

NSBC123EPDXV6T1

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고3,264

100mA

50V

2.2k

8 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

BCR48PNH6327XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 70mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k, 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 100MHz, 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고4,704

70mA, 100mA

50V

47k, 2.2k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

-

100MHz, 200MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

NSTB1002DXV5T1G

ON Semiconductor

TRANS NPN PREBIAS/PNP 0.5W SOT55

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: SOT-553

패키지: SOT-553

재고36,600

100mA, 200mA

50V, 40V

47k

80 @ 5mA, 10V / 100 @ 1mA, 10V

250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA

500nA

250MHz

500mW

Surface Mount

SOT-553

NSBC143EDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고7,056

100mA

50V

4.7k

15 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

339mW

Surface Mount

SOT-963

NSBC114YDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고168,000

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

339mW

Surface Mount

SOT-963

PBLS4004D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 300 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 150MHz
Power - Max: 600mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고6,496

100mA, 700mA

50V, 40V

22k

60 @ 5mA, 5V / 300 @ 100mA, 5V

150mV @ 500µA, 10mA / 310mV @ 100mA, 1A

1µA, 100nA

150MHz

600mW

Surface Mount

SC-74, SOT-457

6-TSOP

IMH8AT108

Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

패키지: SC-74, SOT-457

재고26,400

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

-

250MHz

300mW

Surface Mount

SC-74, SOT-457

SMT6

UMA4NTR

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: UMT5

패키지: 5-TSSOP, SC-70-5, SOT-353

재고1,210,560

100mA

50V

10k

-

100 @ 1A, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

UMT5

DMG963010R

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F4-B

패키지: SOT-665

재고6,256

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-665

SSMini5-F4-B

XP0111300L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1

패키지: 5-TSSOP, SC-70-5, SOT-353

재고3,632

100mA

50V

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SMini5-G1

RN1902FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: SOT-563, SOT-666

재고35,862

100mA

50V

10k

1k

30 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

DMA9640T0R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SSMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

패키지: SOT-563, SOT-666

재고213,738

100mA

50V

22k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

RN4907,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고27,390

100mA

50V

10k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

PUMH10,125

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고6,400

100mA

50V

2.2k

47k

100 @ 10mA, 5V

100mV @ 250µA, 5mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

MUN5235DW1T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,051,804

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

NSBC143ZPDXV6T

onsemi

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

Request a Quote

100mA

50V

4.7kOhms

47kOhms

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

RN4904FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고24,000

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

NSBC143TPDXV

onsemi

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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100mA

50V

4.7kOhms

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

RN46A1-TE85L-F

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=22KOHM Q1BER

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms, 10kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V / 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

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100mA

50V

22kOhms, 10kOhms

70 @ 10mA, 5V / 50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

300mW

Surface Mount

SC-74, SOT-457

SM6

RN2905-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고8,940

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

NHUMB9X

Nexperia USA Inc.

TRANS PREBIAS 2PNP 80V 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 150MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

재고54,000

100mA

80V

10kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

150MHz

350mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

EMH2FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

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100mA

50V

47kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

PUMD48-ZLX

Nexperia USA Inc.

TRANS PREBIAS

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

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100mA

50V

47kOhms, 2.2kOhms

47kOhms

80 @ 5mA, 5V / 100 @ 10mA, 5V

150mV @ 500µA, 10mA

1µA

230MHz, 180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PUMD10-QH

Nexperia USA Inc.

PUMD10-Q/SOT363/SC-88

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

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100mA

50V

2.2kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 250µA, 5mA

100nA

230MHz, 180MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

ACX114EUQ-7R

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 3K

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 270mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고9,000

100mA

50V

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

270mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PUMB2-ZLX

NXP

PUMB2/ZLX

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-