페이지 18 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이

기록 2,013
페이지  18/72
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 800MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
패키지: SOT-563, SOT-666
재고2,176
150mA
50V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100mW
800MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
E-L6221AD
STMicroelectronics

TRANS 4NPN DARL 50V 1.8A 20SOIC

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고4,096
1.8A
50V
1.6V @ 1.8A
-
-
1W
-
-40°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
ZXTD4591E6TC
Diodes Incorporated

TRANS NPN/PNP 60V 1A SOT23-6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고7,872
1A
60V
600mV @ 100mA, 1A / 500mV @ 100mA, 1A
100nA
100 @ 500mA, 5V
1.1W
150MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
XP0650100L
Panasonic Electronic Components

TRANS 2NPN 50V 0.1A SMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
  • Power - Max: 150mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
패키지: 6-TSSOP, SC-88, SOT-363
재고2,384
100mA
50V
300mV @ 10mA, 100mA
100µA
160 @ 2mA, 10V
150mW
150MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SMINI6-G1
JAN2N2919U
Microsemi Corporation

TRANS 2NPN 60V 0.03A

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
패키지: 3-SMD, No Lead
재고6,288
30mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
200°C (TJ)
Surface Mount
3-SMD, No Lead
3-SMD
hot SN75468DRG4
Texas Instruments

TRANS 7NPN DARL 100V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고258,000
500mA
100V
1.6V @ 500µA, 350mA
-
-
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
NSS60101DMTTBG
ON Semiconductor

TRANS NPN DUAL 60V 1A 6WDFN

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 2.27W
  • Frequency - Transition: 180MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
패키지: 6-WDFN Exposed Pad
재고7,568
1A
60V
180mV @ 100mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
2.27W
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
hot EMZ8T2R
Rohm Semiconductor

TRANS NPN/PNP 50V/12V 6EMT

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
  • Power - Max: 150mW
  • Frequency - Transition: 180MHz, 260MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고96,000
150mA, 500mA
50V, 12V
400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
100nA (ICBO)
120 @ 1mA, 6V / 270 @ 10mA, 2V
150mW
180MHz, 260MHz
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
SMBT3906DW1T1G
ON Semiconductor

TRANS 2PNP 40V 0.2A SC88

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 150mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363, SC70
패키지: 6-TSSOP, SC-88, SOT-363
재고3,312
200mA
40V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
150mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363, SC70
hot MPQ2483
Central Semiconductor Corp

TRANS 4NPN 40V

  • Transistor Type: 4 NPN (Quad)
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 3W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
패키지: 14-DIP (0.300", 7.62mm)
재고5,504
-
40V
-
20nA (ICBO)
-
3W
50MHz
-
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot STD815CP40
STMicroelectronics

TRANS NPN/PNP 400V 1.5A 8DIP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
  • Power - Max: 2.6W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고24,000
1.5A
400V
1V @ 50mA, 350mA
1mA
16 @ 350mA, 5V
2.6W
-
-
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
2N6987
Microsemi Corporation

TRANS 4PNP 60V 0.6A TO116

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
패키지: 14-DIP (0.300", 7.62mm)
재고7,104
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
1.5W
-
-65°C ~ 200°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot STA485A
Sanken

TRANS 4NPN DARL 100V 1A 10-SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 4V
  • Power - Max: 4W
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
패키지: 10-SIP
재고28,560
1A
100V
1.5V @ 1mA, 500mA
10µA (ICBO)
2000 @ 500mA, 4V
4W
50MHz
150°C (TJ)
Through Hole
10-SIP
10-SIP
CMKT2907AG TR
Central Semiconductor Corp

TRANS 2PNP 60V 0.6A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고6,960
600mA
60V
1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
200MHz
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot MMDT4413-7-F
Diodes Incorporated

TRANS NPN/PNP 40V 0.6A SOT363

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V / 100 @ 150mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz, 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고1,404,000
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 1V / 100 @ 150mA, 2V
200mW
250MHz, 200MHz
-65°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot ZXTD618MCTA
Diodes Incorporated

TRANS 2NPN 20V 4.5A 8DFN

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 125mA, 4.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
  • Power - Max: 1.7W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
패키지: 8-WDFN Exposed Pad
재고32,328
4.5A
20V
300mV @ 125mA, 4.5A
100nA
200 @ 2A, 2V
1.7W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x2)
CMXT2207 TR
Central Semiconductor Corp

TRANS NPN/PNP 600MA SOT26

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V, 60V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz, 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고59,580
600mA
40V, 60V
1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
350mW
300MHz, 200MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot STA404A
Sanken

TRANS 4NPN DARL 200V 3A 10-SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 1.5mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
  • Power - Max: 4W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
패키지: 10-SIP
재고12,564
3A
200V
2V @ 1.5mA, 1A
100µA (ICBO)
1000 @ 1A, 4V
4W
-
150°C (TJ)
Through Hole
10-SIP
10-SIP
DME201010R
Panasonic Electronic Components

TRANS NPN/PNP 50V 0.1A MINI5

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G3-B
패키지: SC-74A, SOT-753
재고28,668
100mA
50V
300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
100µA
210 @ 2mA, 10V
300mW
150MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
Mini5-G3-B
hot ZXTD6717E6TA
Diodes Incorporated

TRANS NPN/PNP 15V/12V SOT23-6

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.5A, 1.25A
  • Voltage - Collector Emitter Breakdown (Max): 15V, 12V
  • Vce Saturation (Max) @ Ib, Ic: 245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V / 200 @ 500mA, 2V
  • Power - Max: 1.1W
  • Frequency - Transition: 180MHz, 220MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고266,904
1.5A, 1.25A
15V, 12V
245mV @ 20mA, 1.5A / 240mV @ 100mA, 1.25A
10nA
250 @ 500mA, 2V / 200 @ 500mA, 2V
1.1W
180MHz, 220MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot BC857BS-7-F
Diodes Incorporated

TRANS 2PNP 45V 0.1A SOT363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고431,532
100mA
45V
400mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot ZXTD720MCTA
Diodes Incorporated

TRANS 2PNP 40V 3A 8DFN

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
  • Power - Max: 1.7W
  • Frequency - Transition: 190MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
패키지: 8-WDFN Exposed Pad
재고144,000
3A
40V
370mV @ 250mA, 2.5A
100nA
60 @ 1.5A, 2V
1.7W
190MHz
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN (3x2)
PMBT3946YPN-QX
Nexperia USA Inc.

PMBT3946YPN-Q/SOT363/SC-88

  • Transistor Type: 1 NPN, 1 PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
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200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
50nA (ICBO)
100 @ 10mA, 1V
350mW
300MHz, 250MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
BC847BSH-QX
Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
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100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
2N5794UC
Microchip Technology

DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: UC
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600mA
40V
900mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 200°C (TJ)
Surface Mount
6-SMD, No Lead
UC
ULN2803AD
TAEJIN

TRANS 8NPN DARL 50V 0.5A SOP-18

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.3V @ 200mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: 18-SOP
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500mA
50V
1.3V @ 200mA
50µA
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
-
18-SOP
BCM846BSH-QX
Nexperia USA Inc.

BCM846BSH-QX

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
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100mA
65V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
250MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
CMXT3904-TR-PBFREE
Central Semiconductor Corp

TRANS 2NPN 40V 0.2A SOT26

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: -
재고17,559
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
350mW
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26