페이지 19 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC847PNE6433BTMA1	Infineon Technologies	TRANS NPN/PNP 45V 0.1A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고2,144	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
2N2917	Central Semiconductor Corp	TRANS 2NPN 30MA 45V TO78-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고3,296	30mA	45V	-	-	60 @ 10µA, 5V	600mW	60MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2643	Central Semiconductor Corp	TRANS 2NPN 30MA 45V TO78-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 40MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고7,152	30mA	45V	-	-	100 @ 10µA, 5V	600mW	40MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2223	Central Semiconductor Corp	TRANS 2NPN 500MA 60V TO78-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 600mW Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고7,680	500mA	60V	1.2V @ 5mA, 50mA	10nA (ICBO)	50 @ 10mA, 5V	600mW	50MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
BC848CPDW1T1	ON Semiconductor	TRANS NPN/PNP 30V 0.1A SOT363 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고4,832	100mA	30V	600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
TPC6901(TE85L,F,M)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 6VS Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 1A, 700mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V Power - Max: 400mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: VS-6 (2.9x2.8)	패키지: SOT-23-6 Thin, TSOT-23-6	재고4,528	1A, 700mA	50V	170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA	100nA (ICBO)	400 @ 100mA, 2V / 200 @ 100mA, 2V	400mW	-	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	VS-6 (2.9x2.8)
NSVT45011MW6T3G	ON Semiconductor	TRANS 2NPN 45V 0.1A SC88-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,688	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PBSS4260PANP,115	Nexperia USA Inc.	TRANS NPN/PNP 60V 2A 6HUSON Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 90mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Power - Max: 510mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고4,512	2A	60V	90mV @ 50mA, 500mA	100nA (ICBO)	120 @ 1A, 2V	510mW	140MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
HN4B01JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A ESV PLN Transistor Type: NPN, PNP (Emitter Coupled) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	패키지: SOT-553	재고5,712	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 10MA, 100MA	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-553	ESV
PBSS5220PAPSX	Nexperia USA Inc.	TRANS 2PNP 20V 2A 6HUSON Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 370mW Frequency - Transition: 95MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6	패키지: 6-UDFN Exposed Pad	재고5,040	2A	20V	390mV @ 200mA, 2A	100nA (ICBO)	160 @ 1A, 2V	370mW	95MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6
BC847BS,115	Nexperia USA Inc.	TRANS 2NPN 45V 0.1A 6TSSOP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP, SC-88	패키지: 6-TSSOP, SC-88, SOT-363	재고2,704	100mA	45V	300mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	300mW	100MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88
SMBTA06UPNE6327HTSA1	Infineon Technologies	TRANS NPN/PNP 80V 0.5A SC-74 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	패키지: SC-74, SOT-457	재고192,486	500mA	80V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	330mW	100MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	PG-SC74-6
ULQ2004A	STMicroelectronics	TRANS 7NPN DARL 50V 0.5A 16DIP Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.7V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	패키지: 16-DIP (0.300", 7.62mm)	재고19,902	500mA	50V	1.7V @ 500µA, 350mA	-	1000 @ 350mA, 2V	-	-	150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-DIP
UMZ2NTR	Rohm Semiconductor	TRANS NPN/PNP 50V 0.15A 6UMT Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz, 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고1,552,560	150mA	50V	400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	180MHz, 140MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMX3NTR	Rohm Semiconductor	TRANS 2NPN 50V 0.15A 6UMT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고1,767,600	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	180MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
CMKT2207 TR	Central Semiconductor Corp	TRANS NPN/PNP 40V/60V SOT-363 Transistor Type: NPN, PNP Complementary Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Frequency - Transition: 300MHz, 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고56,472	600mA	40V, 60V	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	350mW	300MHz, 200MHz	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ULN2803ADW	Texas Instruments	TRANS 8NPN DARL 50V 0.5A 18SO Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOIC	패키지: 18-SOIC (0.295", 7.50mm Width)	재고27,288	500mA	50V	1.6V @ 500µA, 350mA	-	-	-	-	-40°C ~ 85°C (TA)	Surface Mount	18-SOIC (0.295", 7.50mm Width)	18-SOIC
PBSS4041SPN,115	Nexperia USA Inc.	TRANS NPN/PNP 60V 6.7A/5.9A 8SO Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 6.7A, 5.9A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A / 275mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V / 150 @ 2A, 2V Power - Max: 2.3W Frequency - Transition: 130MHz, 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고47,226	6.7A, 5.9A	60V	350mV @ 350mA, 7A / 275mV @ 400mA, 4A	100nA	150 @ 4A, 2V / 150 @ 2A, 2V	2.3W	130MHz, 110MHz	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EMZ7-TP	Micro Commercial Co	DUAL N+P TRANSISTORS,SOT-563 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Power - Max: 200mW Frequency - Transition: 420MHz, 280MHz Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고17,955	100mA	12V	220mV @ 10mA, 200mA	100nA (ICBO)	200 @ 10mA, 2V	200mW	420MHz, 280MHz	-55°C ~ 150°C	Surface Mount	SOT-563, SOT-666	SOT-563
BCM846BSHF	Nexperia USA Inc.	BCM846BSHF Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	65V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	200mW	250MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SG2815J	Microchip Technology	DRIVER - MEDIUM CURRENT ARRAY, H Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 18-CDIP (0.300", 7.62mm) Supplier Device Package: 18-CERDIP	패키지: -	Request a Quote	600mA	50V	1.9V @ 600µA, 500mA	-	-	-	-	-55°C ~ 125°C (TA)	Through Hole	18-CDIP (0.300", 7.62mm)	18-CERDIP
MMDT2907A-TPQ2	Micro Commercial Co	Interface Transistor Type: 2 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	200mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CMLT5087E-TR-PBFREE	Central Semiconductor Corp	TRANS 2PNP 50V 0.1A SOT-563 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V Power - Max: 350mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고42,204	100mA	50V	400mV @ 10mA, 100mA	50nA (ICBO)	300 @ 100µA, 5V	350mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
JANS2N5796UC	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: UC	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 175°C (TJ)	Surface Mount	6-SMD, No Lead	UC
2N4045	Solid State Inc.	BI-POLAR SILICON TRANSISTOR TO- Transistor Type: 2 NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N5795A	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	40 @ 150mA, 10V	600mW	-	-65°C ~ 175°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JANS2N3810L-TR	Microsemi Corporation	BJTS Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: - Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	-	-	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	-	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MMDT2907AHE3-TP	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: 2 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	200mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363

BC847PNE6433BTMA1

Infineon Technologies

TRANS NPN/PNP 45V 0.1A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고2,144

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

2N2917

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고3,296

30mA

45V

-

60 @ 10µA, 5V

600mW

60MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N2643

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 40MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고7,152

30mA

45V

-

100 @ 10µA, 5V

600mW

40MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N2223

Central Semiconductor Corp

TRANS 2NPN 500MA 60V TO78-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 600mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고7,680

500mA

60V

1.2V @ 5mA, 50mA

10nA (ICBO)

50 @ 10mA, 5V

600mW

50MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

BC848CPDW1T1

ON Semiconductor

TRANS NPN/PNP 30V 0.1A SOT363

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고4,832

100mA

30V

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

TPC6901(TE85L,F,M)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 6VS

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 1A, 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Power - Max: 400mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: VS-6 (2.9x2.8)

패키지: SOT-23-6 Thin, TSOT-23-6

재고4,528

1A, 700mA

50V

170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA

100nA (ICBO)

400 @ 100mA, 2V / 200 @ 100mA, 2V

400mW

-

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

VS-6 (2.9x2.8)

NSVT45011MW6T3G

ON Semiconductor

TRANS 2NPN 45V 0.1A SC88-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,688

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PBSS4260PANP,115

Nexperia USA Inc.

TRANS NPN/PNP 60V 2A 6HUSON

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 90mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Power - Max: 510mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고4,512

2A

60V

90mV @ 50mA, 500mA

100nA (ICBO)

120 @ 1A, 2V

510mW

140MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

HN4B01JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ESV PLN

Transistor Type: NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

패키지: SOT-553

재고5,712

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 10MA, 100MA

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-553

ESV

PBSS5220PAPSX

Nexperia USA Inc.

TRANS 2PNP 20V 2A 6HUSON

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 370mW
Frequency - Transition: 95MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020D-6

패키지: 6-UDFN Exposed Pad

재고5,040

2A

20V

390mV @ 200mA, 2A

100nA (ICBO)

160 @ 1A, 2V

370mW

95MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020D-6

BC847BS,115

Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSSOP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP, SC-88

패키지: 6-TSSOP, SC-88, SOT-363

재고2,704

100mA

45V

300mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

300mW

100MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP, SC-88

SMBTA06UPNE6327HTSA1

Infineon Technologies

TRANS NPN/PNP 80V 0.5A SC-74

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: PG-SC74-6

패키지: SC-74, SOT-457

재고192,486

500mA

80V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

330mW

100MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

PG-SC74-6

ULQ2004A

STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16DIP

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

패키지: 16-DIP (0.300", 7.62mm)

재고19,902

500mA

50V

1.7V @ 500µA, 350mA

-

1000 @ 350mA, 2V

-

150°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-DIP

UMZ2NTR

Rohm Semiconductor

TRANS NPN/PNP 50V 0.15A 6UMT

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz, 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고1,552,560

150mA

50V

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

180MHz, 140MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMX3NTR

Rohm Semiconductor

TRANS 2NPN 50V 0.15A 6UMT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고1,767,600

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

180MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

CMKT2207 TR

Central Semiconductor Corp

TRANS NPN/PNP 40V/60V SOT-363

Transistor Type: NPN, PNP Complementary
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: 300MHz, 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고56,472

600mA

40V, 60V

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

350mW

300MHz, 200MHz

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ULN2803ADW

Texas Instruments

TRANS 8NPN DARL 50V 0.5A 18SO

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOIC

패키지: 18-SOIC (0.295", 7.50mm Width)

재고27,288

500mA

50V

1.6V @ 500µA, 350mA

-

-40°C ~ 85°C (TA)

Surface Mount

18-SOIC (0.295", 7.50mm Width)

18-SOIC

PBSS4041SPN,115

Nexperia USA Inc.

TRANS NPN/PNP 60V 6.7A/5.9A 8SO

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 6.7A, 5.9A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A / 275mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V / 150 @ 2A, 2V
Power - Max: 2.3W
Frequency - Transition: 130MHz, 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고47,226

6.7A, 5.9A

60V

350mV @ 350mA, 7A / 275mV @ 400mA, 4A

100nA

150 @ 4A, 2V / 150 @ 2A, 2V

2.3W

130MHz, 110MHz

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EMZ7-TP

Micro Commercial Co

DUAL N+P TRANSISTORS,SOT-563

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Power - Max: 200mW
Frequency - Transition: 420MHz, 280MHz
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고17,955

100mA

12V

220mV @ 10mA, 200mA

100nA (ICBO)

200 @ 10mA, 2V

200mW

420MHz, 280MHz

-55°C ~ 150°C

Surface Mount

SOT-563, SOT-666

SOT-563

BCM846BSHF

Nexperia USA Inc.

BCM846BSHF

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

Request a Quote

100mA

65V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

200mW

250MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SG2815J

Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 18-CDIP (0.300", 7.62mm)
Supplier Device Package: 18-CERDIP

패키지: -

Request a Quote

600mA

50V

1.9V @ 600µA, 500mA

-

-55°C ~ 125°C (TA)

Through Hole

18-CDIP (0.300", 7.62mm)

18-CERDIP

MMDT2907A-TPQ2

Micro Commercial Co

Interface

Transistor Type: 2 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

600mA

60V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

200mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CMLT5087E-TR-PBFREE

Central Semiconductor Corp

TRANS 2PNP 50V 0.1A SOT-563

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고42,204

100mA

50V

400mV @ 10mA, 100mA

50nA (ICBO)

300 @ 100µA, 5V

350mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

JANS2N5796UC

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: UC

패키지: -

Request a Quote

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 175°C (TJ)

Surface Mount

6-SMD, No Lead

UC

2N4045

Solid State Inc.

BI-POLAR SILICON TRANSISTOR TO-

Transistor Type: 2 NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

Request a Quote

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N5795A

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

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600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

40 @ 150mA, 10V

600mW

-

-65°C ~ 175°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JANS2N3810L-TR

Microsemi Corporation

BJTS

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: -
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

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-

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MMDT2907AHE3-TP

Micro Commercial Co

BIPOLAR TRANSISTORS

Transistor Type: 2 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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600mA

60V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

200mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363