페이지 69 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N4854	Central Semiconductor Corp	TRANSISTOR DUAL TO78 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고4,160	-	-	-	-	-	-	-	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2916A	Central Semiconductor Corp	TRANS 2NPN 30MA 45V TO78-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고2,432	30mA	45V	-	-	150 @ 10µA, 5V	600mW	60MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
2N2913	Central Semiconductor Corp	TRANS 2NPN 30MA 45V TO78-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V Power - Max: 600mW Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고6,800	30mA	45V	-	-	60 @ 10µA, 5V	600mW	60MHz	-	Through Hole	TO-78-6 Metal Can	TO-78-6
NST3946DXV6T1	ON Semiconductor	TRANS NPN/PNP 40V 0.2A SOT563 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 500mW Frequency - Transition: 300MHz, 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고3,472	200mA	40V	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	500mW	300MHz, 250MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BC846UPNE6327HTSA1	Infineon Technologies	TRANS NPN/PNP 65V 0.1A SC74-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	패키지: SC-74, SOT-457	재고3,360	100mA	65V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	PG-SC74-6
JANTXV2N3810L	Microsemi Corporation	TRANS 2PNP 60V 0.05A Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고2,160	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
JAN2N2919L	Microsemi Corporation	TRANS 2NPN 60V 0.03A TO78 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고2,848	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
2N3810L	Microsemi Corporation	TRANS 2PNP 60V 0.05A TO-78 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고7,392	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
NSVBT2222ADW1T1G	ON Semiconductor	TRANS 2NPN 40V 0.6A SOT363 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,608	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	150mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PIMZ2,125	Nexperia USA Inc.	TRANS NPN/PNP 50V 0.15A 6TSOP Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz, 190MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고5,376	150mA	50V	250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	300mW	100MHz, 190MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
BC857BS-13-F	Diodes Incorporated	TRANS 2PNP 45V 0.1A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고7,520	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	200mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MAT14ARZ-R7	Analog Devices Inc.	TRANS 4NPN 40V 0.03A 14SO Transistor Type: 4 NPN (Quad) Matched Pairs Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 60mV @ 100µA, 1mA Current - Collector Cutoff (Max): 3nA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	패키지: 14-SOIC (0.154", 3.90mm Width)	재고4,512	30mA	40V	60mV @ 100µA, 1mA	3nA	-	-	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
PBSS4230PANP,115	Nexperia USA Inc.	TRANS NPN/PNP 30V 2A 6HUSON Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 510mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고3,776	2A	30V	290mV @ 200mA, 2A	100nA (ICBO)	200 @ 1A, 2V	510mW	120MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
PMP4201G,115	Nexperia USA Inc.	TRANS 2NPN 45V 0.1A 5TSSOP Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-TSSOP	패키지: 5-TSSOP, SC-70-5, SOT-353	재고3,504	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	300mW	250MHz	150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	5-TSSOP
PBSS4160DS,115	Nexperia USA Inc.	TRANS 2NPN 60V 1A 6TSOP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Power - Max: 420mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고7,392	1A	60V	250mV @ 100mA, 1A	100nA	200 @ 500mA, 5V	420mW	220MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
DMG204A00R	Panasonic Electronic Components	TRANS NPN/PNP 20V/10V 0.5A MINI6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V, 10V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 130 @ 500mA, 2V Power - Max: 300mW Frequency - Transition: 150MHZ, 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	패키지: SOT-23-6	재고3,536	500mA	20V, 10V	400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA	100nA (ICBO)	200 @ 500mA, 2V / 130 @ 500mA, 2V	300mW	150MHZ, 250MHz	150°C (TJ)	Surface Mount	SOT-23-6	Mini6-G4-B
ZXTDC3M832TA	Diodes Incorporated	TRANS NPN/PNP 50V/40V 4A/3A 8MLP Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 4A, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V Power - Max: 1W Frequency - Transition: 165MHz, 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	패키지: 8-VDFN Exposed Pad	재고124,968	4A, 3A	50V, 40V	320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A	25nA	100 @ 2A, 2V / 60 @ 1.5A, 2V	1W	165MHz, 190MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
IMT1AT110	Rohm Semiconductor	TRANS 2PNP 50V 0.15A 6SMT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	패키지: SC-74, SOT-457	재고3,447,768	150mA	50V	500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	300mW	140MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SMT6
MMDT4146-7-F	Diodes Incorporated	TRANS NPN/PNP 25V 0.2A SOT363 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz, 250MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고904,344	200mA	25V	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	50nA (ICBO)	120 @ 2mA, 1V	200mW	300MHz, 250MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MMDT4126-7	Diodes Incorporated	TRANS 2PNP 25V 0.2A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고25,788	200mA	25V	400mV @ 5mA, 50mA	50nA (ICBO)	120 @ 2mA, 1V	200mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DME50C010R	Panasonic Electronic Components	TRANS NPN/PNP DARL 50V SMINI5 Transistor Type: NPN, PNP Complementary Darlington Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 150mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	패키지: 5-SMD, Flat Leads	재고29,112	100mA	50V	300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA	100µA	210 @ 2mA, 10V	150mW	150MHz	150°C (TJ)	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
BC856S-TP	Micro Commercial Co	DUALPNPSMALLSIGNALTRANSISTORSOT- Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고8,964	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	200mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ZDT795AQTA	Diodes Incorporated	PWR LOW SAT TRANSISTOR SM-8 T&R Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 2.25W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM-8	패키지: -	Request a Quote	500mA	140V	250mV @ 50mA, 500mA	100nA (ICBO)	300 @ 10mA, 2V	2.25W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM-8
DST3946DPJ-7B	Diodes Incorporated	GENERAL PURPOSE TRANSISTOR SOT96 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: -	Request a Quote	200mA	40V	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	300mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
PBSS4160DS-QH	Nexperia USA Inc.	PBSS4160DS-Q/SOT457/SC-74 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 870mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 420mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: -	Request a Quote	870mA	60V	250mV @ 100mA, 1A	100nA	250 @ 1mA, 5V	420mW	220MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
NSV20200DMTWTBG	onsemi	TRANS NPN 20V 6WDFN Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Power - Max: - Frequency - Transition: 155MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	패키지: -	Request a Quote	-	-	390mV @ 200mA, 2A	100nA (ICBO)	250 @ 100mA, 2V	-	155MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
ULN2004AN-NG	Texas Instruments	PROTOTYPE Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: -	Request a Quote	500mA	50V	1.6V @ 500µA, 350mA	50µA	-	-	-	150°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
HN1C01FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,994	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6

2N4854

Central Semiconductor Corp

TRANSISTOR DUAL TO78

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고4,160

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N2916A

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고2,432

30mA

45V

-

150 @ 10µA, 5V

600mW

60MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

2N2913

Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10µA, 5V
Power - Max: 600mW
Frequency - Transition: 60MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고6,800

30mA

45V

-

60 @ 10µA, 5V

600mW

60MHz

-

Through Hole

TO-78-6 Metal Can

TO-78-6

NST3946DXV6T1

ON Semiconductor

TRANS NPN/PNP 40V 0.2A SOT563

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고3,472

200mA

40V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

500mW

300MHz, 250MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BC846UPNE6327HTSA1

Infineon Technologies

TRANS NPN/PNP 65V 0.1A SC74-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: PG-SC74-6

패키지: SC-74, SOT-457

재고3,360

100mA

65V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

PG-SC74-6

JANTXV2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고2,160

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

JAN2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고2,848

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

2N3810L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고7,392

50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

NSVBT2222ADW1T1G

ON Semiconductor

TRANS 2NPN 40V 0.6A SOT363

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,608

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

150mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PIMZ2,125

Nexperia USA Inc.

TRANS NPN/PNP 50V 0.15A 6TSOP

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz, 190MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고5,376

150mA

50V

250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

300mW

100MHz, 190MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

BC857BS-13-F

Diodes Incorporated

TRANS 2PNP 45V 0.1A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고7,520

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

200mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MAT14ARZ-R7

Analog Devices Inc.

TRANS 4NPN 40V 0.03A 14SO

Transistor Type: 4 NPN (Quad) Matched Pairs
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 60mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 3nA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

재고4,512

30mA

40V

60mV @ 100µA, 1mA

3nA

-

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

PBSS4230PANP,115

Nexperia USA Inc.

TRANS NPN/PNP 30V 2A 6HUSON

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 510mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고3,776

2A

30V

290mV @ 200mA, 2A

100nA (ICBO)

200 @ 1A, 2V

510mW

120MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

PMP4201G,115

Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 5TSSOP

Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-TSSOP

패키지: 5-TSSOP, SC-70-5, SOT-353

재고3,504

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

300mW

250MHz

150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

5-TSSOP

PBSS4160DS,115

Nexperia USA Inc.

TRANS 2NPN 60V 1A 6TSOP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Power - Max: 420mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고7,392

1A

60V

250mV @ 100mA, 1A

100nA

200 @ 500mA, 5V

420mW

220MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

DMG204A00R

Panasonic Electronic Components

TRANS NPN/PNP 20V/10V 0.5A MINI6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V, 10V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V / 130 @ 500mA, 2V
Power - Max: 300mW
Frequency - Transition: 150MHZ, 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

패키지: SOT-23-6

재고3,536

500mA

20V, 10V

400mV @ 20mA, 500mA / 300mV @ 8mA, 400mA

100nA (ICBO)

200 @ 500mA, 2V / 130 @ 500mA, 2V

300mW

150MHZ, 250MHz

150°C (TJ)

Surface Mount

SOT-23-6

Mini6-G4-B

ZXTDC3M832TA

Diodes Incorporated

TRANS NPN/PNP 50V/40V 4A/3A 8MLP

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 4A, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max: 1W
Frequency - Transition: 165MHz, 190MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

패키지: 8-VDFN Exposed Pad

재고124,968

4A, 3A

50V, 40V

320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A

25nA

100 @ 2A, 2V / 60 @ 1.5A, 2V

1W

165MHz, 190MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

IMT1AT110

Rohm Semiconductor

TRANS 2PNP 50V 0.15A 6SMT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

패키지: SC-74, SOT-457

재고3,447,768

150mA

50V

500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

300mW

140MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

SMT6

MMDT4146-7-F

Diodes Incorporated

TRANS NPN/PNP 25V 0.2A SOT363

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 200mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고904,344

200mA

25V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

50nA (ICBO)

120 @ 2mA, 1V

200mW

300MHz, 250MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MMDT4126-7

Diodes Incorporated

TRANS 2PNP 25V 0.2A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고25,788

200mA

25V

400mV @ 5mA, 50mA

50nA (ICBO)

120 @ 2mA, 1V

200mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DME50C010R

Panasonic Electronic Components

TRANS NPN/PNP DARL 50V SMINI5

Transistor Type: NPN, PNP Complementary Darlington
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

패키지: 5-SMD, Flat Leads

재고29,112

100mA

50V

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

100µA

210 @ 2mA, 10V

150mW

150MHz

150°C (TJ)

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

BC856S-TP

Micro Commercial Co

DUALPNPSMALLSIGNALTRANSISTORSOT-

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고8,964

100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

200mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ZDT795AQTA

Diodes Incorporated

PWR LOW SAT TRANSISTOR SM-8 T&R

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 2.25W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM-8

패키지: -

Request a Quote

500mA

140V

250mV @ 50mA, 500mA

100nA (ICBO)

300 @ 10mA, 2V

2.25W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM-8

DST3946DPJ-7B

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT96

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: -

Request a Quote

200mA

40V

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

300mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

PBSS4160DS-QH

Nexperia USA Inc.

PBSS4160DS-Q/SOT457/SC-74

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 420mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: -

Request a Quote

870mA

60V

250mV @ 100mA, 1A

100nA

250 @ 1mA, 5V

420mW

220MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

NSV20200DMTWTBG

onsemi

TRANS NPN 20V 6WDFN

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Power - Max: -
Frequency - Transition: 155MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

패키지: -

Request a Quote

-

390mV @ 200mA, 2A

100nA (ICBO)

250 @ 100mA, 2V

-

155MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

ULN2004AN-NG

Texas Instruments

PROTOTYPE

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: -

Request a Quote

500mA

50V

1.6V @ 500µA, 350mA

50µA

-

150°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

HN1C01FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,994

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6