페이지 70 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC857CDW1T1	ON Semiconductor	TRANS 2PNP 45V 0.1A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고3,968	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	380mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
ZDT6757TA	Diodes Incorporated	TRANS NPN/PNP 300V 0.5A SM8 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Power - Max: 2.75W Frequency - Transition: 30MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고2,208,000	500mA	300V	500mV @ 10mA, 100mA	100nA (ICBO)	50 @ 100mA, 5V	2.75W	30MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
EMT1DXV6T5G	ON Semiconductor	TRANS 2PNP 60V 0.1A SOT563 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 500mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고4,048	100mA	60V	500mV @ 5mA, 50mA	500nA (ICBO)	120 @ 1mA, 6V	500mW	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
PBSS4112PANP,115	Nexperia USA Inc.	TRANS NPN/PNP 120V 1A 6HUSON Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V Power - Max: 510mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	패키지: 6-UDFN Exposed Pad	재고6,320	1A	120V	120mV @ 50mA, 500mA	100nA (ICBO)	60 @ 500mA, 2V	510mW	120MHz	150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
ZDT1049TA	Diodes Incorporated	TRANS 2NPN 25V 5A SM8 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 4A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 2.75W Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고87,540	5A	25V	220mV @ 50mA, 4A	10nA	300 @ 1A, 2V	2.75W	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
STA301A	Sanken	TRANS 3NPN DARL 60V 4A 8-SIP Transistor Type: 3 NPN Darlington (Emitter Coupled) Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 3W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-SIP Supplier Device Package: 8-SIP	패키지: 8-SIP	재고22,728	4A	60V	2V @ 10mA, 3A	100µA (ICBO)	1000 @ 3A, 4V	3W	-	150°C (TJ)	Through Hole	8-SIP	8-SIP
ULN2074B	STMicroelectronics	TRANS 4NPN DARL 50V 1.75A 16DIP Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.75A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1W Frequency - Transition: - Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-PowerDIP (0.300", 7.62mm) Supplier Device Package: 16-PowerDIP (20x7.10)	패키지: 16-PowerDIP (0.300", 7.62mm)	재고89,736	1.75A	50V	1.4V @ 2mA, 1.25A	-	-	1W	-	-20°C ~ 85°C (TA)	Through Hole	16-PowerDIP (0.300", 7.62mm)	16-PowerDIP (20x7.10)
ULN2064B	STMicroelectronics	TRANS 4NPN DARL 50V 1.75A 16DIP Transistor Type: 4 NPN Darlington (Quad) Current - Collector (Ic) (Max): 1.75A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1W Frequency - Transition: - Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-PowerDIP (0.300", 7.62mm) Supplier Device Package: 16-PowerDIP (20x7.10)	패키지: 16-PowerDIP (0.300", 7.62mm)	재고233,412	1.75A	50V	1.4V @ 2mA, 1.25A	-	-	1W	-	-20°C ~ 85°C (TA)	Through Hole	16-PowerDIP (0.300", 7.62mm)	16-PowerDIP (20x7.10)
PBSS4021SPN,115	Nexperia USA Inc.	TRANS NPN/PNP 20V 7.5A/6.3A 8SO Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 7.5A, 6.3A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V Power - Max: 2.3W Frequency - Transition: 115MHz, 105MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고13,284	7.5A, 6.3A	20V	275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A	100nA	250 @ 4A, 2V / 150 @ 4A, 2V	2.3W	115MHz, 105MHz	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BCM847DS,135	Nexperia USA Inc.	TRANS 2NPN 45V 0.1A 6TSOP Transistor Type: 2 NPN (Dual) Matched Pair Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 380mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고3,056	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	380mW	250MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
DMC206E20R	Panasonic Electronic Components	TRANS 2NPN 20V 0.015A MINI6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 650MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	패키지: SOT-23-6	재고3,296	15mA	20V	-	-	65 @ 1mA, 6V	300mW	650MHz	150°C (TJ)	Surface Mount	SOT-23-6	Mini6-G4-B
DME505010R	Panasonic Electronic Components	TRANS NPN/PNP 50V 0.1A SMINI6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 150mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	패키지: 6-SMD, Flat Leads	재고7,712	100mA	50V	300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA	100µA	210 @ 2mA, 10V	150mW	150MHz	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
CMLT3904E TR	Central Semiconductor Corp	TRANS 2NPN 40V 0.2A SOT563 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고24,864	200mA	40V	100mV @ 5mA, 50mA	-	30 @ 100mA, 1V	150mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ZXTC2063E6TA	Diodes Incorporated	TRANS NPN/PNP 40V 3.5A/3A SOT23 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 3.5A, 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 195mV @ 350mA, 3.5A / 175mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V / 200 @ 1A, 2V Power - Max: 1.1W Frequency - Transition: 190MHz, 270MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고27,354	3.5A, 3A	40V	195mV @ 350mA, 3.5A / 175mV @ 300mA, 3A	50nA (ICBO)	300 @ 10mA, 2V / 200 @ 1A, 2V	1.1W	190MHz, 270MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
BC857BS-AU_R1_000A1	Panjit International Inc.	SOT-363, TRANSISTOR Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MMDT2227HE3-TP	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V, 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA, 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	600mA	40V, 60V	1.6V @ 50mA, 500mA	10nA, 50nA	100 @ 150mA, 10V	200mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
JANSF2N3810	Microchip Technology	NPN TRANSISTOR Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
SG2803J	Microchip Technology	DRIVER - MEDIUM CURRENT ARRAY, H Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 18-CDIP (0.300", 7.62mm) Supplier Device Package: 18-CERDIP	패키지: -	Request a Quote	500mA	50V	1.6V @ 500µA, 350mA	-	-	-	-	-55°C ~ 125°C (TA)	Through Hole	18-CDIP (0.300", 7.62mm)	18-CERDIP
BC846S-QZ	Nexperia USA Inc.	TRANS 2NPN 65V 0.1A 6TSSOP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
JAN2N5796U	Microchip Technology	NPN TRANSISTOR Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 175°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
HN1C01FU-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고17,910	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	80MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
JANS2N5796U-TR	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: U	패키지: -	Request a Quote	600mA	60V	1.6V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 175°C (TJ)	Surface Mount	6-SMD, No Lead	U
QS5Y2FSTR	Rohm Semiconductor	PNP+NPN DRIVER TRANSISTOR. DEVI Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Power - Max: 500mW Frequency - Transition: 320MHz, 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSMT5	패키지: -	재고9,714	3A	50V	350mV @ 50mA, 1A / 400mV @ 50mA, 1A	1µA (ICBO)	180 @ 50mA, 3V	500mW	320MHz, 300MHz	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
JANSP2N3810L	Microchip Technology	DUAL RH SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
BC847BPN-DG-B4X	Nexperia USA Inc.	TRANSISTOR GEN PURP Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 400mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	45V	300mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	400mW	100MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ZXTC4591AMCQTA	Diodes Incorporated	SS MID-PERF TRANSISTOR U-DFN3020 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 2.5A, 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V Power - Max: 1.5W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: W-DFN3020-8	패키지: -	재고6,000	2.5A, 2A	40V	500mV @ 100mA, 1A	100nA	300 @ 500mA, 5V / 300 @ 100mA, 5V	1.5W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	W-DFN3020-8
MMDT2227	Diotec Semiconductor	BJT SOT-363 60V 600MA Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 300MHz, 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고8,667	600mA	60V	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	200mW	300MHz, 200MHz	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	SOT-363
CMLT5551-TR-PBFREE	Central Semiconductor Corp	TRANS 2NPN 160V 0.6A SOT-563 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 350mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고2,283	600mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	350mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

BC857CDW1T1

ON Semiconductor

TRANS 2PNP 45V 0.1A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고3,968

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

380mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

ZDT6757TA

Diodes Incorporated

TRANS NPN/PNP 300V 0.5A SM8

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Power - Max: 2.75W
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고2,208,000

500mA

300V

500mV @ 10mA, 100mA

100nA (ICBO)

50 @ 100mA, 5V

2.75W

30MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

EMT1DXV6T5G

ON Semiconductor

TRANS 2PNP 60V 0.1A SOT563

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고4,048

100mA

60V

500mV @ 5mA, 50mA

500nA (ICBO)

120 @ 1mA, 6V

500mW

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

PBSS4112PANP,115

Nexperia USA Inc.

TRANS NPN/PNP 120V 1A 6HUSON

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
Power - Max: 510mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

패키지: 6-UDFN Exposed Pad

재고6,320

1A

120V

120mV @ 50mA, 500mA

100nA (ICBO)

60 @ 500mA, 2V

510mW

120MHz

150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

ZDT1049TA

Diodes Incorporated

TRANS 2NPN 25V 5A SM8

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 4A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 2.75W
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고87,540

5A

25V

220mV @ 50mA, 4A

10nA

300 @ 1A, 2V

2.75W

180MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

STA301A

Sanken

TRANS 3NPN DARL 60V 4A 8-SIP

Transistor Type: 3 NPN Darlington (Emitter Coupled)
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-SIP
Supplier Device Package: 8-SIP

패키지: 8-SIP

재고22,728

4A

60V

2V @ 10mA, 3A

100µA (ICBO)

1000 @ 3A, 4V

3W

-

150°C (TJ)

Through Hole

8-SIP

ULN2074B

STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

Transistor Type: 4 NPN Darlington (Quad)
Current - Collector (Ic) (Max): 1.75A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-PowerDIP (0.300", 7.62mm)
Supplier Device Package: 16-PowerDIP (20x7.10)

패키지: 16-PowerDIP (0.300", 7.62mm)

재고89,736

1.75A

50V

1.4V @ 2mA, 1.25A

-

1W

-

-20°C ~ 85°C (TA)

Through Hole

16-PowerDIP (0.300", 7.62mm)

16-PowerDIP (20x7.10)

ULN2064B

STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

Transistor Type: 4 NPN Darlington (Quad)
Current - Collector (Ic) (Max): 1.75A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-PowerDIP (0.300", 7.62mm)
Supplier Device Package: 16-PowerDIP (20x7.10)

패키지: 16-PowerDIP (0.300", 7.62mm)

재고233,412

1.75A

50V

1.4V @ 2mA, 1.25A

-

1W

-

-20°C ~ 85°C (TA)

Through Hole

16-PowerDIP (0.300", 7.62mm)

16-PowerDIP (20x7.10)

PBSS4021SPN,115

Nexperia USA Inc.

TRANS NPN/PNP 20V 7.5A/6.3A 8SO

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 7.5A, 6.3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
Power - Max: 2.3W
Frequency - Transition: 115MHz, 105MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고13,284

7.5A, 6.3A

20V

275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A

100nA

250 @ 4A, 2V / 150 @ 4A, 2V

2.3W

115MHz, 105MHz

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BCM847DS,135

Nexperia USA Inc.

TRANS 2NPN 45V 0.1A 6TSOP

Transistor Type: 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고3,056

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

380mW

250MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

DMC206E20R

Panasonic Electronic Components

TRANS 2NPN 20V 0.015A MINI6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 650MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

패키지: SOT-23-6

재고3,296

15mA

20V

-

65 @ 1mA, 6V

300mW

650MHz

150°C (TJ)

Surface Mount

SOT-23-6

Mini6-G4-B

DME505010R

Panasonic Electronic Components

TRANS NPN/PNP 50V 0.1A SMINI6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

패키지: 6-SMD, Flat Leads

재고7,712

100mA

50V

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

100µA

210 @ 2mA, 10V

150mW

150MHz

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

CMLT3904E TR

Central Semiconductor Corp

TRANS 2NPN 40V 0.2A SOT563

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고24,864

200mA

40V

100mV @ 5mA, 50mA

-

30 @ 100mA, 1V

150mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ZXTC2063E6TA

Diodes Incorporated

TRANS NPN/PNP 40V 3.5A/3A SOT23

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 3.5A, 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 195mV @ 350mA, 3.5A / 175mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V / 200 @ 1A, 2V
Power - Max: 1.1W
Frequency - Transition: 190MHz, 270MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고27,354

3.5A, 3A

40V

195mV @ 350mA, 3.5A / 175mV @ 300mA, 3A

50nA (ICBO)

300 @ 10mA, 2V / 200 @ 1A, 2V

1.1W

190MHz, 270MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

BC857BS-AU_R1_000A1

Panjit International Inc.

SOT-363, TRANSISTOR

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MMDT2227HE3-TP

Micro Commercial Co

BIPOLAR TRANSISTORS

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

600mA

40V, 60V

1.6V @ 50mA, 500mA

10nA, 50nA

100 @ 150mA, 10V

200mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

JANSF2N3810

Microchip Technology

NPN TRANSISTOR

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

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50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

SG2803J

Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 18-CDIP (0.300", 7.62mm)
Supplier Device Package: 18-CERDIP

패키지: -

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500mA

50V

1.6V @ 500µA, 350mA

-

-55°C ~ 125°C (TA)

Through Hole

18-CDIP (0.300", 7.62mm)

18-CERDIP

BC846S-QZ

Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

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100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

JAN2N5796U

Microchip Technology

NPN TRANSISTOR

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

패키지: -

Request a Quote

600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 175°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

HN1C01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고17,910

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

80MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

JANS2N5796U-TR

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: U

패키지: -

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600mA

60V

1.6V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 175°C (TJ)

Surface Mount

6-SMD, No Lead

U

QS5Y2FSTR

Rohm Semiconductor

PNP+NPN DRIVER TRANSISTOR. DEVI

Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
Power - Max: 500mW
Frequency - Transition: 320MHz, 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5

패키지: -

재고9,714

3A

50V

350mV @ 50mA, 1A / 400mV @ 50mA, 1A

1µA (ICBO)

180 @ 50mA, 3V

500mW

320MHz, 300MHz

150°C (TJ)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSMT5

JANSP2N3810L

Microchip Technology

DUAL RH SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

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50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

BC847BPN-DG-B4X

Nexperia USA Inc.

TRANSISTOR GEN PURP

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 400mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

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100mA

45V

300mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

400mW

100MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

ZXTC4591AMCQTA

Diodes Incorporated

SS MID-PERF TRANSISTOR U-DFN3020

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 2.5A, 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
Power - Max: 1.5W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: W-DFN3020-8

패키지: -

재고6,000

2.5A, 2A

40V

500mV @ 100mA, 1A

100nA

300 @ 500mA, 5V / 300 @ 100mA, 5V

1.5W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

W-DFN3020-8

MMDT2227

Diotec Semiconductor

BJT SOT-363 60V 600MA

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 300MHz, 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고8,667

600mA

60V

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

200mW

300MHz, 200MHz

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

SOT-363

CMLT5551-TR-PBFREE

Central Semiconductor Corp

TRANS 2NPN 160V 0.6A SOT-563

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 350mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고2,283

600mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

350mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563