페이지 227 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC5171,MATUDQ(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 180V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고5,584	2A	180V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2W	200MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
MPSA77_D26Z	Fairchild/ON Semiconductor	TRANS PNP DARL 60V 1.2A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,464	1.2A	60V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC5504DTM	Fairchild/ON Semiconductor	TRANS NPN 600V 4A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V Power - Max: 75W Frequency - Transition: 11MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-252AA	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고16,836	4A	600V	1.5V @ 400mA, 2A	100µA	4 @ 2A, 1V	75W	11MHz	150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-252AA
KSA931OBU	Fairchild/ON Semiconductor	TRANS PNP 60V 0.7A TO-92L Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body	재고3,168	700mA	60V	700mV @ 50mA, 500mA	100nA (ICBO)	70 @ 50mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92-3
KSC2785OTA	Fairchild/ON Semiconductor	TRANS NPN 50V 0.15A TO-92S Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)	재고3,152	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 1mA, 6V	250mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
BC183_D27Z	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V Power - Max: 350mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,968	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	40 @ 10µA, 5V	350mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SD12800SL	Panasonic Electronic Components	TRANS NPN 20V 1A MINI PWR Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1	패키지: TO-243AA	재고7,200	1A	20V	500mV @ 50mA, 1A	1µA (ICBO)	180 @ 500mA, 2V	1W	150MHz	150°C (TJ)	Surface Mount	TO-243AA	MiniP3-F1
JANTXV2N5238	Microsemi Corporation	TRANS NPN 170V 10A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 170V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고3,888	10A	170V	2.5V @ 1A, 10A	10µA	40 @ 5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
NSVMMBT589LT1G	ON Semiconductor	TRANS PNP 30V 1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 310mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,144	1A	30V	650mV @ 200mA, 2A	100nA	100 @ 500mA, 2V	310mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PXT4403,115	Nexperia USA Inc.	TRANS PNP 40V 0.6A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.1W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고7,392	600mA	40V	750mV @ 50mA, 500mA	50nA (ICBO)	100 @ 150mA, 2V	1.1W	200MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
MMST5401-TP	Micro Commercial Co	TRANS PNP 150V 0.2A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고5,056	200mA	150V	500mV @ 5mA, 50mA	50nA	60 @ 10mA, 5V	200mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
PMST2222,115	Nexperia USA Inc.	TRANS NPN 30V 0.6A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,552	600mA	30V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	200mW	250MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
SBCP53-16T1G	ON Semiconductor	TRANS PNP 80V 1.5A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.5W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: TO-261-4, TO-261AA	재고17,880	1.5A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	1.5W	50MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
2SD14500TA	Panasonic Electronic Components	TRANS NPN 20V 0.5A NS-B1 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	패키지: NS-B1	재고50,484	500mA	20V	400mV @ 20mA, 500mA	100nA (ICBO)	400 @ 500mA, 2V	300mW	200MHz	150°C (TJ)	Through Hole	NS-B1	NS-B1
2SB07920SL	Panasonic Electronic Components	TRANS PNP 150V 0.05A SC-59 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고25,398	50mA	150V	1V @ 3mA, 30mA	1µA (ICBO)	185 @ 10mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
NTE2426	NTE Electronics, Inc	TRANS NPN DARL 80V 0.5A SOT89 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	500 mA	80 V	1.3V @ 500µA, 500mA	10µA	2000 @ 500mA, 10V	1 W	-	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANTX2N3501UB-TR	Microchip Technology	TRANS NPN 150V 0.3A UB Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
GSBCX56-16	Good-Ark Semiconductor	TRANSISTOR, NPN, 1A, 100V, SOT-8 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3L	패키지: -	재고5,940	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	130MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3L
BCP68-25-QF	Nexperia USA Inc.	TRANS NPN 20V 2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Power - Max: 650 mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	2 A	20 V	600mV @ 200mA, 2A	100nA (ICBO)	160 @ 500mA, 1V	650 mW	170MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N3634	Microchip Technology	TRANS PNP 140V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	50 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N2897	Solid State Inc.	TRANS NPN 45V 1A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 1V @ 15mA, 150mA Current - Collector Cutoff (Max): 5nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	1 A	45 V	1V @ 15mA, 150mA	5nA (ICBO)	50 @ 150mA, 10V	500 mW	100MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N2906AUB-TR	Microchip Technology	TRANS PNP 60V 0.6A UB Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SB892T	onsemi	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	2 A	50 V	700mV @ 50mA, 1A	100nA (ICBO)	100 @ 100mA, 2V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
2SB927S-AE	onsemi	TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	2.5 A	25 V	600mV @ 75mA, 1.5A	100nA (ICBO)	140 @ 100mA, 2V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
BCP53-16HX	Nexperia USA Inc.	TRANS PNP 80V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2.2 W Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	재고6,774	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	2.2 W	100MHz	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BC806-16WX	Nexperia USA Inc.	TRANS PNP 80V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고58,254	500 mA	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	500 mW	155MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2SD2198S-DL-E	onsemi	BIP NPN 5A 50V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC3468F-AE	onsemi	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	100 mA	300 V	600mV @ 2mA, 20mA	100nA (ICBO)	40 @ 10mA, 10V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP

2SC5171,MATUDQ(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 180V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고5,584

2A

180V

1V @ 100mA, 1A

5µA (ICBO)

100 @ 100mA, 5V

2W

200MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220NIS

MPSA77_D26Z

Fairchild/ON Semiconductor

TRANS PNP DARL 60V 1.2A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,464

1.2A

60V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC5504DTM

Fairchild/ON Semiconductor

TRANS NPN 600V 4A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V
Power - Max: 75W
Frequency - Transition: 11MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-252AA

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고16,836

4A

600V

1.5V @ 400mA, 2A

100µA

4 @ 2A, 1V

75W

11MHz

150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-252AA

KSA931OBU

Fairchild/ON Semiconductor

TRANS PNP 60V 0.7A TO-92L

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body

재고3,168

700mA

60V

700mV @ 50mA, 500mA

100nA (ICBO)

70 @ 50mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92-3

KSC2785OTA

Fairchild/ON Semiconductor

TRANS NPN 50V 0.15A TO-92S

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)

재고3,152

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

70 @ 1mA, 6V

250mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

BC183_D27Z

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,968

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

40 @ 10µA, 5V

350mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SD12800SL

Panasonic Electronic Components

TRANS NPN 20V 1A MINI PWR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F1

패키지: TO-243AA

재고7,200

1A

20V

500mV @ 50mA, 1A

1µA (ICBO)

180 @ 500mA, 2V

1W

150MHz

150°C (TJ)

Surface Mount

TO-243AA

MiniP3-F1

JANTXV2N5238

Microsemi Corporation

TRANS NPN 170V 10A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 170V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고3,888

10A

170V

2.5V @ 1A, 10A

10µA

40 @ 5A, 5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

NSVMMBT589LT1G

ON Semiconductor

TRANS PNP 30V 1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,144

1A

30V

650mV @ 200mA, 2A

100nA

100 @ 500mA, 2V

310mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PXT4403,115

Nexperia USA Inc.

TRANS PNP 40V 0.6A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고7,392

600mA

40V

750mV @ 50mA, 500mA

50nA (ICBO)

100 @ 150mA, 2V

1.1W

200MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

MMST5401-TP

Micro Commercial Co

TRANS PNP 150V 0.2A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고5,056

200mA

150V

500mV @ 5mA, 50mA

50nA

60 @ 10mA, 5V

200mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

PMST2222,115

Nexperia USA Inc.

TRANS NPN 30V 0.6A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,552

600mA

30V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

200mW

250MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

SBCP53-16T1G

ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: TO-261-4, TO-261AA

재고17,880

1.5A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

1.5W

50MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

2SD14500TA

Panasonic Electronic Components

TRANS NPN 20V 0.5A NS-B1

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

패키지: NS-B1

재고50,484

500mA

20V

400mV @ 20mA, 500mA

100nA (ICBO)

400 @ 500mA, 2V

300mW

200MHz

150°C (TJ)

Through Hole

NS-B1

2SB07920SL

Panasonic Electronic Components

TRANS PNP 150V 0.05A SC-59

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고25,398

50mA

150V

1V @ 3mA, 30mA

1µA (ICBO)

185 @ 10mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

NTE2426

NTE Electronics, Inc

TRANS NPN DARL 80V 0.5A SOT89

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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500 mA

80 V

1.3V @ 500µA, 500mA

10µA

2000 @ 500mA, 10V

1 W

-

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANTX2N3501UB-TR

Microchip Technology

TRANS NPN 150V 0.3A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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300 mA

150 V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

GSBCX56-16

Good-Ark Semiconductor

TRANSISTOR, NPN, 1A, 100V, SOT-8

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3L

패키지: -

재고5,940

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

500 mW

130MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3L

BCP68-25-QF

Nexperia USA Inc.

TRANS NPN 20V 2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 650 mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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2 A

20 V

600mV @ 200mA, 2A

100nA (ICBO)

160 @ 500mA, 1V

650 mW

170MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N3634

Microchip Technology

TRANS PNP 140V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

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1 A

140 V

600mV @ 5mA, 50mA

10µA

50 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2N2897

Solid State Inc.

TRANS NPN 45V 1A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 15mA, 150mA
Current - Collector Cutoff (Max): 5nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

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1 A

45 V

1V @ 15mA, 150mA

5nA (ICBO)

50 @ 150mA, 10V

500 mW

100MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N2906AUB-TR

Microchip Technology

TRANS PNP 60V 0.6A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SB892T

onsemi

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

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2 A

50 V

700mV @ 50mA, 1A

100nA (ICBO)

100 @ 100mA, 2V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

2SB927S-AE

onsemi

TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

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2.5 A

25 V

600mV @ 75mA, 1.5A

100nA (ICBO)

140 @ 100mA, 2V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

BCP53-16HX

Nexperia USA Inc.

TRANS PNP 80V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2.2 W
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

재고6,774

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

2.2 W

100MHz

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BC806-16WX

Nexperia USA Inc.

TRANS PNP 80V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고58,254

500 mA

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

500 mW

155MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2SD2198S-DL-E

onsemi

BIP NPN 5A 50V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC3468F-AE

onsemi

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

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100 mA

300 V

600mV @ 2mA, 20mA

100nA (ICBO)

40 @ 10mA, 10V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP