페이지 230 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N7371	Microsemi Corporation	TRANS PNP DARL 100V 12A TO254 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 100W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	패키지: TO-254-3, TO-254AA (Straight Leads)	재고6,272	12A	100V	3V @ 120mA, 12A	1mA	1000 @ 6A, 3V	100W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA (Straight Leads)	TO-254AA
BD245A-S	Bourns Inc.	TRANS NPN 60V 10A Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 3W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고5,344	10A	60V	4V @ 2.5A, 10A	700µA	20 @ 3A, 4V	3W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
TIP41B	ON Semiconductor	TRANS NPN 80V 6A TO-220AB Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고4,928	6A	80V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
KSB1116SYBU	Fairchild/ON Semiconductor	TRANS PNP 50V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V Power - Max: 750mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,408	1A	50V	300mV @ 50mA, 1A	100nA (ICBO)	135 @ 100mA, 2V	750mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJNS7565BU	Fairchild/ON Semiconductor	TRANS NPN 10V 5A TO-92MINI Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 450mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 500mA, 2V Power - Max: 550mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,480	5A	10V	450mV @ 60mA, 3A	100nA (ICBO)	450 @ 500mA, 2V	550mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92S
BC212_D74Z	Fairchild/ON Semiconductor	TRANS PNP 50V 0.3A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,504	300mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC546A	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,640	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PN3640	Fairchild/ON Semiconductor	TRANS PNP 12V 0.2A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV Power - Max: 350mW Frequency - Transition: 500MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고36,000	200mA	12V	600mV @ 5mA, 50mA	10nA	30 @ 10mA, 300mV	350mW	500MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JANTX2N2907AUA	Microsemi Corporation	TRANS PNP 60V 0.6A Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: 4-SMD, No Lead	재고7,600	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
JANTXV2N3019	Microsemi Corporation	TRANS NPN 80V 1A Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고3,232	1A	80V	500mV @ 50mA, 500mA	10µA (ICBO)	50 @ 500mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
2N930A	Microsemi Corporation	TRANS NPN 45V 0.03A TO18 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,280	-	-	-	-	-	-	-	-	-	-	-
NSV60601MZ4T3G	ON Semiconductor	TRANS NPN 60V 6A SOT-223-4 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고5,792	6A	60V	300mV @ 600mA, 6A	100nA (ICBO)	120 @ 1A, 2V	800mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BCW60D,235	Nexperia USA Inc.	TRANS NPN 32V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,840	100mA	32V	550mV @ 1.25mA, 50mA	20nA (ICBO)	380 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
TIP41BG	ON Semiconductor	TRANS NPN 80V 6A TO-220AB Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고4,656	6A	80V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SB1386T100Q	Rohm Semiconductor	TRANS PNP 20V 5A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고438,960	5A	20V	1V @ 100mA, 4A	500nA (ICBO)	120 @ 500mA, 2V	2W	120MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
SMMBT2907ALT1G	ON Semiconductor	TRANS PNP 60V 0.6A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	300mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
QSL10TR	Rohm Semiconductor	TRANS GP BJT NPN 12V 1.5A 5-PIN Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 12 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 900 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSMT5	패키지: -	Request a Quote	1.5 A	12 V	1.2V @ 375mA, 3A	100nA (ICBO)	270 @ 200mA, 2V	900 mW	-	150°C (TJ)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSMT5
2SA2070-TE12L-F	Toshiba Semiconductor and Storage	TRANS PNP 50V 1A PW-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	패키지: -	Request a Quote	1 A	50 V	200mV @ 10mA, 300mA	100nA (ICBO)	200 @ 100mA, 2V	1 W	-	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
BF821-QR	Nexperia USA Inc.	BF821-Q/SOT23/TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 250 mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	50 mA	300 V	800mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	250 mW	60MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JANSL2N5153	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2C3506-MSCL	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4942-AZ	Renesas	2SC4942-AZ - NPN SILICON TRIPLE Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Power - Max: 2 W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MP-2	패키지: -	Request a Quote	1 A	600 V	1V @ 80mA, 400mA	10µA (ICBO)	30 @ 100mA, 5V	2 W	30MHz	150°C (TJ)	Surface Mount	TO-243AA	MP-2
JANTXV2N3771	Microchip Technology	TRANS NPN 40V 0.005A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	5 mA	40 V	4V @ 6A, 30A	5mA	15 @ 15A, 4V	6 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BC846BWE6327	Infineon Technologies	TRANS NPN 65V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	65 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	330 mW	250MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N2443	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6725	NTE Electronics, Inc	TRANS NPN DARL 50V 1A TO237 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-237AA Supplier Device Package: TO-237	패키지: -	Request a Quote	1 A	50 V	1.5V @ 2mA, 1A	-	4000 @ 1A, 5V	1 W	-	-	Through Hole	TO-237AA	TO-237
2SC4548E-TD-E	onsemi	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.3 W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: -	Request a Quote	200 mA	400 V	600mV @ 5mA, 50mA	100nA (ICBO)	100 @ 50mA, 10V	1.3 W	70MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
BC846BW-DG-B4F	Nexperia USA Inc.	TRANS NPN 65V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	65 V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323

JANTXV2N7371

Microsemi Corporation

TRANS PNP DARL 100V 12A TO254

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Power - Max: 100W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA

패키지: TO-254-3, TO-254AA (Straight Leads)

재고6,272

12A

100V

3V @ 120mA, 12A

1mA

1000 @ 6A, 3V

100W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA (Straight Leads)

TO-254AA

BD245A-S

Bourns Inc.

TRANS NPN 60V 10A

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고5,344

10A

60V

4V @ 2.5A, 10A

700µA

20 @ 3A, 4V

3W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

TIP41B

ON Semiconductor

TRANS NPN 80V 6A TO-220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고4,928

6A

80V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

KSB1116SYBU

Fairchild/ON Semiconductor

TRANS PNP 50V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Power - Max: 750mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,408

1A

50V

300mV @ 50mA, 1A

100nA (ICBO)

135 @ 100mA, 2V

750mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJNS7565BU

Fairchild/ON Semiconductor

TRANS NPN 10V 5A TO-92MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 500mA, 2V
Power - Max: 550mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,480

5A

10V

450mV @ 60mA, 3A

100nA (ICBO)

450 @ 500mA, 2V

550mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92S

BC212_D74Z

Fairchild/ON Semiconductor

TRANS PNP 50V 0.3A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,504

300mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC546A

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,640

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PN3640

Fairchild/ON Semiconductor

TRANS PNP 12V 0.2A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
Power - Max: 350mW
Frequency - Transition: 500MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고36,000

200mA

12V

600mV @ 5mA, 50mA

10nA

30 @ 10mA, 300mV

350mW

500MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JANTX2N2907AUA

Microsemi Corporation

TRANS PNP 60V 0.6A

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: 4-SMD, No Lead

재고7,600

600mA

60V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

JANTXV2N3019

Microsemi Corporation

TRANS NPN 80V 1A

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고3,232

1A

80V

500mV @ 50mA, 500mA

10µA (ICBO)

50 @ 500mA, 10V

800mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

2N930A

Microsemi Corporation

TRANS NPN 45V 0.03A TO18

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,280

-

NSV60601MZ4T3G

ON Semiconductor

TRANS NPN 60V 6A SOT-223-4

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고5,792

6A

60V

300mV @ 600mA, 6A

100nA (ICBO)

120 @ 1A, 2V

800mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BCW60D,235

Nexperia USA Inc.

TRANS NPN 32V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,840

100mA

32V

550mV @ 1.25mA, 50mA

20nA (ICBO)

380 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

TIP41BG

ON Semiconductor

TRANS NPN 80V 6A TO-220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고4,656

6A

80V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SB1386T100Q

Rohm Semiconductor

TRANS PNP 20V 5A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고438,960

5A

20V

1V @ 100mA, 4A

500nA (ICBO)

120 @ 500mA, 2V

2W

120MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

SMMBT2907ALT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

300mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

QSL10TR

Rohm Semiconductor

TRANS GP BJT NPN 12V 1.5A 5-PIN

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 900 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSMT5

패키지: -

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1.5 A

12 V

1.2V @ 375mA, 3A

100nA (ICBO)

270 @ 200mA, 2V

900 mW

-

150°C (TJ)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSMT5

2SA2070-TE12L-F

Toshiba Semiconductor and Storage

TRANS PNP 50V 1A PW-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

패키지: -

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1 A

50 V

200mV @ 10mA, 300mA

100nA (ICBO)

200 @ 100mA, 2V

1 W

-

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

BF821-QR

Nexperia USA Inc.

BF821-Q/SOT23/TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 250 mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

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50 mA

300 V

800mV @ 5mA, 30mA

10nA (ICBO)

50 @ 25mA, 20V

250 mW

60MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

JANSL2N5153

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2C3506-MSCL

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC4942-AZ

Renesas

2SC4942-AZ - NPN SILICON TRIPLE

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Power - Max: 2 W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MP-2

패키지: -

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1 A

600 V

1V @ 80mA, 400mA

10µA (ICBO)

30 @ 100mA, 5V

2 W

30MHz

150°C (TJ)

Surface Mount

TO-243AA

MP-2

JANTXV2N3771

Microchip Technology

TRANS NPN 40V 0.005A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

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5 mA

40 V

4V @ 6A, 30A

5mA

15 @ 15A, 4V

6 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BC846BWE6327

Infineon Technologies

TRANS NPN 65V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

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100 mA

65 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

330 mW

250MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N2443

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N6725

NTE Electronics, Inc

TRANS NPN DARL 50V 1A TO237

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237

패키지: -

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1 A

50 V

1.5V @ 2mA, 1A

-

4000 @ 1A, 5V

1 W

-

Through Hole

TO-237AA

TO-237

2SC4548E-TD-E

onsemi

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1.3 W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: -

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200 mA

400 V

600mV @ 5mA, 50mA

100nA (ICBO)

100 @ 50mA, 10V

1.3 W

70MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

BC846BW-DG-B4F

Nexperia USA Inc.

TRANS NPN 65V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

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100 mA

65 V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323