페이지 24 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TN6718A_D74Z	Fairchild/ON Semiconductor	TRANS NPN 100V 1.2A TO-226 Transistor Type: NPN Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-226	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고7,472	1.2A	100V	500mV @ 10mA, 250mA	100nA (ICBO)	50 @ 250mA, 1V	1W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226
ST600K	STMicroelectronics	TRANS NPN 120V 1A SOT32 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 12.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32-3	패키지: TO-225AA, TO-126-3	재고2,992	1A	120V	500mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 5V	12.5W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
MMBT4403LT3	ON Semiconductor	TRANS PNP 40V 0.6A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고480,000	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	300mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MJW21192G	ON Semiconductor	TRANS NPN 150V 8A TO-247 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V Power - Max: 125W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고3,808	8A	150V	2V @ 1.6A, 8A	10µA	15 @ 4A, 2V	125W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
KSC5025OTU	Fairchild/ON Semiconductor	TRANS NPN 500V 15A TO-3P Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 6A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.2A, 5V Power - Max: 100W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고6,864	15A	500V	1V @ 1.2A, 6A	10µA (ICBO)	20 @ 1.2A, 5V	100W	18MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
BC546CBU	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,168	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
TIP31	ON Semiconductor	TRANS NPN 40V 3A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고42,600	3A	40V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
MJD5731T4G	ON Semiconductor	TRANS PNP 350V 1A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 1.56W Frequency - Transition: 10MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고169,500	1A	350V	1V @ 200mA, 1A	100µA	30 @ 300mA, 10V	1.56W	10MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
2SAR502UBTL	Rohm Semiconductor	TRANS PNP 30V 0.5A UMT3F Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 200mW Frequency - Transition: 520MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	패키지: SC-85	재고7,776	500mA	30V	400mV @ 10mA, 200mA	200nA (ICBO)	200 @ 100mA, 2V	200mW	520MHz	150°C (TJ)	Surface Mount	SC-85	UMT3F
TIP35CP	STMicroelectronics	TRANS NPN 100V 25A TO-3P Transistor Type: NPN Current - Collector (Ic) (Max): 25A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Power - Max: 125W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고7,224	25A	100V	4V @ 5A, 25A	1mA	10 @ 15A, 4V	125W	3MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
BC848A-7-F	Diodes Incorporated	TRANS NPN 30V 0.1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고468,000	100mA	30V	600mV @ 5mA, 100mA	15nA	110 @ 2mA, 5V	300mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
KSC2328AYBU	Fairchild/ON Semiconductor	TRANS NPN 30V 2A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body	재고235,728	2A	30V	2V @ 30mA, 1.5A	100nA (ICBO)	160 @ 500mA, 2V	1W	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92-3
2SC2412KT146R	Rohm Semiconductor	TRANS NPN 50V 0.15A SOT-346 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고23,671,500	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	180 @ 1mA, 6V	200mW	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
BCP53-10-QX	Nexperia USA Inc.	BCP53-10-Q/SOT223/SC-73 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 650 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	650 mW	145MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
NTE2698	NTE Electronics, Inc	TRANS NPN 120V 7A TO3PN Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Power - Max: 70 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	패키지: -	Request a Quote	7 A	120 V	500mV @ 300mA, 3A	100µA (ICBO)	100 @ 3A, 4V	70 W	-	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
BCP55-10TF	Nexperia USA Inc.	BCP55-10T/SOT223/SC-73 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.3 W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	60 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.3 W	155MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PBHV8115X-QX	Nexperia USA Inc.	PBHV8115X-Q/SOT89/MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V Power - Max: 520 mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고3,000	1 A	150 V	350mV @ 200mA, 1A	100nA	100 @ 100mA, 10V	520 mW	30MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
CP788X-2N2605-WN	Central Semiconductor Corp	TRANS PNP 45V 0.03A DIE Transistor Type: - Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	30 mA	45 V	500mV @ 500µA, 10mA	10nA	150 @ 500µA, 5V	400 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die
30A01M-TL-E	onsemi	BIP PNP 0.3A 30V Transistor Type: PNP Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Power - Max: 300 mW Frequency - Transition: 520MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	패키지: -	Request a Quote	300 mA	30 V	220mV @ 5mA, 100mA	100nA (ICBO)	200 @ 10mA, 2V	300 mW	520MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
2SB861-B-BP	Micro Commercial Co	TRANS PNP 150V 2A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Power - Max: 1.8 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	2 A	150 V	3V @ 50mA, 500mA	1µA (ICBO)	60 @ 50mA, 4V	1.8 W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
CMPT3640-BK	Central Semiconductor Corp	TRANS PNP 12V 0.08A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 12 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV Power - Max: 350 mW Frequency - Transition: 500MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	80 mA	12 V	600mV @ 5mA, 50mA	10nA	30 @ 10mA, 300mV	350 mW	500MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PMD11K80	Solid State Inc.	TRANS PNP DARL 80V 12A TO3 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	12 A	80 V	-	-	-	-	-	-	Through Hole	TO-204AA, TO-3	TO-3
2N3420	Microchip Technology	TRANS NPN 60V 3A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: -	Request a Quote	3 A	60 V	500mV @ 200mA, 2A	5µA	40 @ 1A, 2V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
BC847AQB-QZ	Nexperia USA Inc.	SMALL SIGNAL BIPOLAR IN DFN PACK Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 340 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	패키지: -	재고15,000	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	340 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
CP710-CMPTA96-CT	Central Semiconductor Corp	TRANS PNP 450V 0.5A DIE Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 450 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 350 mW Frequency - Transition: 20MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	500 mA	450 V	500mV @ 5mA, 50mA	100nA (ICBO)	50 @ 10mA, 10V	350 mW	20MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2SD1900-02-E	Renesas Electronics Corporation	NPN BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2C5666	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANKCC2N5339	Microchip Technology	TRANS NPN 100V 5A TO205AD Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-205AD (TO-39)	패키지: -	Request a Quote	5 A	100 V	1.2V @ 500mA, 5A	100µA	60 @ 2A, 2V	1 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-205AD (TO-39)

TN6718A_D74Z

Fairchild/ON Semiconductor

TRANS NPN 100V 1.2A TO-226

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고7,472

1.2A

100V

500mV @ 10mA, 250mA

100nA (ICBO)

50 @ 250mA, 1V

1W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-226

ST600K

STMicroelectronics

TRANS NPN 120V 1A SOT32

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Power - Max: 12.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3

패키지: TO-225AA, TO-126-3

재고2,992

1A

120V

500mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 5V

12.5W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32-3

MMBT4403LT3

ON Semiconductor

TRANS PNP 40V 0.6A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고480,000

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

300mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MJW21192G

ON Semiconductor

TRANS NPN 150V 8A TO-247

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Power - Max: 125W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고3,808

8A

150V

2V @ 1.6A, 8A

10µA

15 @ 4A, 2V

125W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

KSC5025OTU

Fairchild/ON Semiconductor

TRANS NPN 500V 15A TO-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 6A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.2A, 5V
Power - Max: 100W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고6,864

15A

500V

1V @ 1.2A, 6A

10µA (ICBO)

20 @ 1.2A, 5V

100W

18MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

BC546CBU

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,168

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

TIP31

ON Semiconductor

TRANS NPN 40V 3A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고42,600

3A

40V

1.2V @ 375mA, 3A

300µA

10 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

MJD5731T4G

ON Semiconductor

TRANS PNP 350V 1A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56W
Frequency - Transition: 10MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고169,500

1A

350V

1V @ 200mA, 1A

100µA

30 @ 300mA, 10V

1.56W

10MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

2SAR502UBTL

Rohm Semiconductor

TRANS PNP 30V 0.5A UMT3F

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 200mW
Frequency - Transition: 520MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

패키지: SC-85

재고7,776

500mA

30V

400mV @ 10mA, 200mA

200nA (ICBO)

200 @ 100mA, 2V

200mW

520MHz

150°C (TJ)

Surface Mount

SC-85

UMT3F

TIP35CP

STMicroelectronics

TRANS NPN 100V 25A TO-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Power - Max: 125W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고7,224

25A

100V

4V @ 5A, 25A

1mA

10 @ 15A, 4V

125W

3MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

BC848A-7-F

Diodes Incorporated

TRANS NPN 30V 0.1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고468,000

100mA

30V

600mV @ 5mA, 100mA

15nA

110 @ 2mA, 5V

300mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

KSC2328AYBU

Fairchild/ON Semiconductor

TRANS NPN 30V 2A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body

재고235,728

2A

30V

2V @ 30mA, 1.5A

100nA (ICBO)

160 @ 500mA, 2V

1W

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92-3

2SC2412KT146R

Rohm Semiconductor

TRANS NPN 50V 0.15A SOT-346

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고23,671,500

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

180 @ 1mA, 6V

200mW

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

BCP53-10-QX

Nexperia USA Inc.

BCP53-10-Q/SOT223/SC-73

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 650 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

650 mW

145MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

NTE2698

NTE Electronics, Inc

TRANS NPN 120V 7A TO3PN

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Power - Max: 70 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN

패키지: -

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7 A

120 V

500mV @ 300mA, 3A

100µA (ICBO)

100 @ 3A, 4V

70 W

-

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PN

BCP55-10TF

Nexperia USA Inc.

BCP55-10T/SOT223/SC-73

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3 W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

60 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.3 W

155MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PBHV8115X-QX

Nexperia USA Inc.

PBHV8115X-Q/SOT89/MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Power - Max: 520 mW
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고3,000

1 A

150 V

350mV @ 200mA, 1A

100nA

100 @ 100mA, 10V

520 mW

30MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

CP788X-2N2605-WN

Central Semiconductor Corp

TRANS PNP 45V 0.03A DIE

Transistor Type: -
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

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30 mA

45 V

500mV @ 500µA, 10mA

10nA

150 @ 500µA, 5V

400 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

Die

30A01M-TL-E

onsemi

BIP PNP 0.3A 30V

Transistor Type: PNP
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Power - Max: 300 mW
Frequency - Transition: 520MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

패키지: -

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300 mA

30 V

220mV @ 5mA, 100mA

100nA (ICBO)

200 @ 10mA, 2V

300 mW

520MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

2SB861-B-BP

Micro Commercial Co

TRANS PNP 150V 2A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Power - Max: 1.8 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

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2 A

150 V

3V @ 50mA, 500mA

1µA (ICBO)

60 @ 50mA, 4V

1.8 W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

CMPT3640-BK

Central Semiconductor Corp

TRANS PNP 12V 0.08A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
Power - Max: 350 mW
Frequency - Transition: 500MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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80 mA

12 V

600mV @ 5mA, 50mA

10nA

30 @ 10mA, 300mV

350 mW

500MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PMD11K80

Solid State Inc.

TRANS PNP DARL 80V 12A TO3

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

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12 A

80 V

-

Through Hole

TO-204AA, TO-3

TO-3

2N3420

Microchip Technology

TRANS NPN 60V 3A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: -

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3 A

60 V

500mV @ 200mA, 2A

5µA

40 @ 1A, 2V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

BC847AQB-QZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 340 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

패키지: -

재고15,000

100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

340 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1110D-3

CP710-CMPTA96-CT

Central Semiconductor Corp

TRANS PNP 450V 0.5A DIE

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 450 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 350 mW
Frequency - Transition: 20MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

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500 mA

450 V

500mV @ 5mA, 50mA

100nA (ICBO)

50 @ 10mA, 10V

350 mW

20MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

2SD1900-02-E

Renesas Electronics Corporation

NPN BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

2C5666

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

JANKCC2N5339

Microchip Technology

TRANS NPN 100V 5A TO205AD

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-205AD (TO-39)

패키지: -

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5 A

100 V

1.2V @ 500mA, 5A

100µA

60 @ 2A, 2V

1 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-205AD (TO-39)