페이지 25 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N4250	Central Semiconductor Corp	TRANSISTOR PNP TO-106 Transistor Type: PNP Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	패키지: TO-106-3 Domed	재고5,616	-	40V	250mV @ 500µA, 10mA	10nA (ICBO)	250 @ 10mA, 5V	200mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-106-3 Domed	TO-106
TTC009,F(M	Toshiba Semiconductor and Storage	TRANS NPN 3A 80V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	패키지: TO-220-3 Full Pack	재고4,496	3A	80V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 5V	2W	150MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS
BC857CT,115	NXP	TRANS PNP 45V 0.1A SC-75 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고7,824	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	150mW	100MHz	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
MPSA63G	ON Semiconductor	TRANS PNP DARL 30V 0.5A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고39,600	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	125MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MMBT6517LT3	ON Semiconductor	TRANS NPN 350V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Power - Max: 225mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,328	100mA	350V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	225mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
KSB744OSTU	Fairchild/ON Semiconductor	TRANS PNP 45V 3A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 45MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고4,640	3A	45V	2V @ 150mA, 1.5A	1µA (ICBO)	100 @ 500mA, 5V	1W	45MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
ZTX949STOA	Diodes Incorporated	TRANS PNP 30V 4.5A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 4.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 1.58W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고6,352	4.5A	30V	320mV @ 300mA, 5A	50nA (ICBO)	100 @ 1A, 1V	1.58W	100MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
FZT957TC	Diodes Incorporated	TRANS PNP 300V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 1A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V Power - Max: 3W Frequency - Transition: 85MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고6,848	1A	300V	240mV @ 300mA, 1A	50nA (ICBO)	100 @ 500mA, 10V	3W	85MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BDX54TU	Fairchild/ON Semiconductor	TRANS PNP DARL 45V 8A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 60W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고7,648	8A	45V	2V @ 12mA, 3A	500µA	750 @ 3A, 3V	60W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
MSD42SWT1	ON Semiconductor	TRANS NPN 300V 0.15A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V Power - Max: 150mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고5,200	150mA	300V	500mV @ 2mA, 200mA	100nA (ICBO)	25 @ 1mA, 10V	150mW	-	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
2N2218	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-SMALL SI Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 3W Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고18,960	800mA	30V	1V @ 50mA, 500mA	10nA (ICBO)	40 @ 150mA, 10V	3W	250MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
FMMT558QTA	Diodes Incorporated	TRANS PNP 400V 0.15A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 500mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,384	150mA	400V	500mV @ 6mA, 50mA	100nA	100 @ 50mA, 10V	500mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
SMMBTA06WT1G	ON Semiconductor	TRANS NPN 80V 0.5A SC70-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고3,200	500mA	80V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	150mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
BCX71KE6327HTSA1	Infineon Technologies	TRANS PNP 45V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고80,310	100mA	45V	550mV @ 1.25mA, 50mA	20nA (ICBO)	380 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
DSC9A01R0L	Panasonic Electronic Components	TRANS NPN 40V 0.05A SSMINI3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	패키지: SC-89, SOT-490	재고5,488	50mA	40V	200mV @ 1mA, 10mA	1µA	400 @ 2mA, 10V	125mW	150MHz	150°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
PXT4401,115	Nexperia USA Inc.	TRANS NPN 40V 0.6A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 1.1W Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고31,536	600mA	40V	750mV @ 50mA, 500mA	50nA (ICBO)	100 @ 150mA, 1V	1.1W	250MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
ZTX689B	Diodes Incorporated	TRANS NPN 20V 3A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고132,000	3A	20V	500mV @ 10mA, 2A	100nA (ICBO)	400 @ 2A, 2V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
MMBT2907A_D87Z	Fairchild/ON Semiconductor	TRANS PNP 60V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고106,188	800mA	60V	1.6V @ 50mA, 500mA	20nA (ICBO)	100 @ 150mA, 10V	350mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N3904UB	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE2676	NTE Electronics, Inc	TRANS NPN 600V 10A TO3PIS Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Power - Max: 50 W Frequency - Transition: 1.7MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3P(H)IS	패키지: -	Request a Quote	10 A	600 V	3V @ 1.5A, 6A	1mA (ICBO)	10 @ 1A, 5V	50 W	1.7MHz	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3P(H)IS
JANS2N5415UA-TR	Microchip Technology	TRANSISTOR POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
KTC3205-O-TP	Micro Commercial Co	TRANS NPN 30V 2A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1 W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	2 A	30 V	2V @ 30mA, 1.5A	100nA (ICBO)	100 @ 500mA, 2V	1 W	120MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2SD1627-TD-E	onsemi	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2839E-SPA	onsemi	BIP NPN 30MA 20V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N3627	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 7 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	50 V	-	-	-	7 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5068	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 87 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	5 A	60 V	-	-	-	87 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
JAN2N3440U4	Microchip Technology	TRANS NPN 250V 2UA U4 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	1 A	250 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
BCX6825QTA	Diodes Incorporated	PWR MID PERF TRANSISTOR SOT89 T& Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: -	Request a Quote	1 A	20 V	500mV @ 100mA, 1A	100nA (ICBO)	160 @ 500mA, 1V	1 W	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3

2N4250

Central Semiconductor Corp

TRANSISTOR PNP TO-106

Transistor Type: PNP
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Supplier Device Package: TO-106

패키지: TO-106-3 Domed

재고5,616

-

40V

250mV @ 500µA, 10mA

10nA (ICBO)

250 @ 10mA, 5V

200mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-106-3 Domed

TO-106

TTC009,F(M

Toshiba Semiconductor and Storage

TRANS NPN 3A 80V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

패키지: TO-220-3 Full Pack

재고4,496

3A

80V

500mV @ 100mA, 1A

100nA (ICBO)

100 @ 500mA, 5V

2W

150MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220NIS

BC857CT,115

NXP

TRANS PNP 45V 0.1A SC-75

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고7,824

100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

150mW

100MHz

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

MPSA63G

ON Semiconductor

TRANS PNP DARL 30V 0.5A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고39,600

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

125MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MMBT6517LT3

ON Semiconductor

TRANS NPN 350V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 225mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,328

100mA

350V

1V @ 5mA, 50mA

50nA (ICBO)

20 @ 50mA, 10V

225mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

KSB744OSTU

Fairchild/ON Semiconductor

TRANS PNP 45V 3A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 45MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고4,640

3A

45V

2V @ 150mA, 1.5A

1µA (ICBO)

100 @ 500mA, 5V

1W

45MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

ZTX949STOA

Diodes Incorporated

TRANS PNP 30V 4.5A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 1.58W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고6,352

4.5A

30V

320mV @ 300mA, 5A

50nA (ICBO)

100 @ 1A, 1V

1.58W

100MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

FZT957TC

Diodes Incorporated

TRANS PNP 300V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Power - Max: 3W
Frequency - Transition: 85MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고6,848

1A

300V

240mV @ 300mA, 1A

50nA (ICBO)

100 @ 500mA, 10V

3W

85MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BDX54TU

Fairchild/ON Semiconductor

TRANS PNP DARL 45V 8A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 60W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고7,648

8A

45V

2V @ 12mA, 3A

500µA

750 @ 3A, 3V

60W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

MSD42SWT1

ON Semiconductor

TRANS NPN 300V 0.15A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 150mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고5,200

150mA

300V

500mV @ 2mA, 200mA

100nA (ICBO)

25 @ 1mA, 10V

150mW

-

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

2N2218

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 3W
Frequency - Transition: 250MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고18,960

800mA

30V

1V @ 50mA, 500mA

10nA (ICBO)

40 @ 150mA, 10V

3W

250MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

FMMT558QTA

Diodes Incorporated

TRANS PNP 400V 0.15A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 500mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,384

150mA

400V

500mV @ 6mA, 50mA

100nA

100 @ 50mA, 10V

500mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

SMMBTA06WT1G

ON Semiconductor

TRANS NPN 80V 0.5A SC70-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고3,200

500mA

80V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

150mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

BCX71KE6327HTSA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고80,310

100mA

45V

550mV @ 1.25mA, 50mA

20nA (ICBO)

380 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

DSC9A01R0L

Panasonic Electronic Components

TRANS NPN 40V 0.05A SSMINI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

패키지: SC-89, SOT-490

재고5,488

50mA

40V

200mV @ 1mA, 10mA

1µA

400 @ 2mA, 10V

125mW

150MHz

150°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

PXT4401,115

Nexperia USA Inc.

TRANS NPN 40V 0.6A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 1.1W
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고31,536

600mA

40V

750mV @ 50mA, 500mA

50nA (ICBO)

100 @ 150mA, 1V

1.1W

250MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

ZTX689B

Diodes Incorporated

TRANS NPN 20V 3A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고132,000

3A

20V

500mV @ 10mA, 2A

100nA (ICBO)

400 @ 2A, 2V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

MMBT2907A_D87Z

Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고106,188

800mA

60V

1.6V @ 50mA, 500mA

20nA (ICBO)

100 @ 150mA, 10V

350mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N3904UB

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE2676

NTE Electronics, Inc

TRANS NPN 600V 10A TO3PIS

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Power - Max: 50 W
Frequency - Transition: 1.7MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3P(H)IS

패키지: -

Request a Quote

10 A

600 V

3V @ 1.5A, 6A

1mA (ICBO)

10 @ 1A, 5V

50 W

1.7MHz

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3P(H)IS

JANS2N5415UA-TR

Microchip Technology

TRANSISTOR POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

KTC3205-O-TP

Micro Commercial Co

TRANS NPN 30V 2A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1 W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

2 A

30 V

2V @ 30mA, 1.5A

100nA (ICBO)

100 @ 500mA, 2V

1 W

120MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2SD1627-TD-E

onsemi

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2839E-SPA

onsemi

BIP NPN 30MA 20V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N3627

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 7 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

2 A

50 V

-

7 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5068

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 87 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

Request a Quote

5 A

60 V

-

87 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

JAN2N3440U4

Microchip Technology

TRANS NPN 250V 2UA U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

Request a Quote

1 A

250 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

BCX6825QTA

Diodes Incorporated

PWR MID PERF TRANSISTOR SOT89 T&

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: -

Request a Quote

1 A

20 V

500mV @ 100mA, 1A

100nA (ICBO)

160 @ 500mA, 1V

1 W

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3