페이지 291 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC337-25ZL1G	ON Semiconductor	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,776	800mA	45V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	210MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TN6714A_D26Z	Fairchild/ON Semiconductor	TRANS NPN 30V 2A TO-226 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-226	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고7,488	2A	30V	500mV @ 100mA, 1A	100nA (ICBO)	50 @ 1A, 1V	1W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226
PN2369A_D74Z	Fairchild/ON Semiconductor	TRANS NPN 15V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,464	200mA	15V	500mV @ 10mA, 100mA	400nA (ICBO)	40 @ 10mA, 1V	350mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BCX6916TA	Diodes Incorporated	TRANS PNP 20V 1A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고72,000	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 1V	1W	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
KSD1944TU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V Power - Max: 30W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고5,520	3A	60V	1V @ 50mA, 2A	100µA (ICBO)	400 @ 500mA, 4V	30W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
KSA931OTA	Fairchild/ON Semiconductor	TRANS PNP 60V 0.7A TO-92L Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고2,320	700mA	60V	700mV @ 50mA, 500mA	100nA (ICBO)	70 @ 50mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92-3
MMBT100A	Fairchild/ON Semiconductor	TRANS NPN 45V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V Power - Max: 350mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고62,160	500mA	45V	400mV @ 20mA, 200mA	50nA	300 @ 10mA, 1V	350mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BUT12TU	Fairchild/ON Semiconductor	TRANS NPN 400V 8A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 100W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고3,456	8A	400V	1.5V @ 1.2A, 6A	1mA	-	100W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BCW60DT116	Rohm Semiconductor	TRANS NPN 32V 0.2A SST3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: - Frequency - Transition: 125MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,672	200mA	32V	-	-	380 @ 2mA, 5V	-	125MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
2SC5060TV2M	Rohm Semiconductor	TRANS NPN DARL 90V 1A ATV Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 3V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	패키지: 3-SIP	재고7,904	1A	90V	1.5V @ 1mA, 500mA	10µA (ICBO)	1000 @ 500mA, 3V	1W	80MHz	150°C (TJ)	Through Hole	3-SIP	ATV
MJE3055T	ON Semiconductor	TRANS NPN 60V 10A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 75W Frequency - Transition: 2MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고56,772	10A	60V	8V @ 3.3A, 10A	700µA	20 @ 4A, 4V	75W	2MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ZXTP2012ZQTA	Diodes Incorporated	TRANS PNP 60V 4.3A SOT89 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,264	-	-	-	-	-	-	-	-	-	-	-
NSV1C301ET4G-VF01	ON Semiconductor	TRANS NPN 100V 3A 3DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Power - Max: 2.1W Frequency - Transition: 120MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,472	3A	100V	250mV @ 300mA, 3A	100nA (ICBO)	120 @ 1A, 2V	2.1W	120MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
JANTX2N1711S	Microsemi Corporation	TRANS NPN 30V 0.5A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고6,528	500mA	30V	1.5V @ 15mA, 150mA	10nA (ICBO)	100 @ 150mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MMBT3904FA-7B	Diodes Incorporated	TRANS NPN 40V 0.2A X2-DFN0806-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 435mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: -	패키지: 3-XFDFN	재고2,576	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	435mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-XFDFN	-
2SC4546	Sanken	TRANS NPN 400V 7A TO220F Transistor Type: NPN Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 30W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고32,580	7A	400V	700mV @ 600mA, 3A	100µA (ICBO)	10 @ 3A, 4V	30W	10MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
BCX17LT1	onsemi	TRANS PNP 45V 500MA SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 225 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	500 mA	45 V	620mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	225 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SCR372PHZGT100Q	Rohm Semiconductor	TRANS NPN 120V 0.7A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고2,400	700 mA	120 V	300mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 5V	500 mW	220MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
90024-01TX	Microchip Technology	TRANS NPN TO3 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	Through Hole	TO-204AA, TO-3	TO-3
BC846W-QF	Nexperia USA Inc.	BC846W-Q/SOT323/SC-70 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	65 V	400mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
CP710V-CMPTA96-CT	Central Semiconductor Corp	TRANS PNP 450V 0.5A DIE Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 450 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 350 mW Frequency - Transition: 20MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	500 mA	450 V	500mV @ 5mA, 50mA	100nA (ICBO)	50 @ 10mA, 10V	350 mW	20MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2N3782	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	40 V	750mV @ 200µA, 1mA	-	-	5 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N6676	Microchip Technology	TRANS NPN 300V 15A TO204AD Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	15 A	300 V	1V @ 3A, 15A	100µA	15 @ 1A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2N6381	Microchip Technology	TRANS PNP 100V 50A TO63 Transistor Type: PNP Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 250 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-211MB, TO-63-4, Stud Supplier Device Package: TO-63	패키지: -	Request a Quote	50 A	100 V	-	-	-	250 W	-	-	Stud Mount	TO-211MB, TO-63-4, Stud	TO-63
2SC3070-AE	onsemi	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Power - Max: 1 W Frequency - Transition: 250MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	1.2 A	25 V	500mV @ 10mA, 500mA	-	300 @ 10mA, 5V	1 W	250MHz	-	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
2N3421U4	Microchip Technology	TRANS NPN 80V 3A U4 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	3 A	80 V	500mV @ 200mA, 2A	300nA	40 @ 1A, 2V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
CMST3904-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 40V 0.2A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 275 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고137,112	200 mA	40 V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	275 mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
FZT855QTC	Diodes Incorporated	PWR HI VOLTAGE TRANSISTOR SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 1.6 W Frequency - Transition: 90MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: -	재고11,970	5 A	150 V	355mV @ 500mA, 5A	50nA	100 @ 1A, 5V	1.6 W	90MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3

BC337-25ZL1G

ON Semiconductor

TRANS NPN 45V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,776

800mA

45V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

210MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TN6714A_D26Z

Fairchild/ON Semiconductor

TRANS NPN 30V 2A TO-226

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고7,488

2A

30V

500mV @ 100mA, 1A

100nA (ICBO)

50 @ 1A, 1V

1W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-226

PN2369A_D74Z

Fairchild/ON Semiconductor

TRANS NPN 15V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,464

200mA

15V

500mV @ 10mA, 100mA

400nA (ICBO)

40 @ 10mA, 1V

350mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BCX6916TA

Diodes Incorporated

TRANS PNP 20V 1A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고72,000

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

100 @ 500mA, 1V

1W

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

KSD1944TU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 4V
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고5,520

3A

60V

1V @ 50mA, 2A

100µA (ICBO)

400 @ 500mA, 4V

30W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

KSA931OTA

Fairchild/ON Semiconductor

TRANS PNP 60V 0.7A TO-92L

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고2,320

700mA

60V

700mV @ 50mA, 500mA

100nA (ICBO)

70 @ 50mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92-3

MMBT100A

Fairchild/ON Semiconductor

TRANS NPN 45V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고62,160

500mA

45V

400mV @ 20mA, 200mA

50nA

300 @ 10mA, 1V

350mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BUT12TU

Fairchild/ON Semiconductor

TRANS NPN 400V 8A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 100W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고3,456

8A

400V

1.5V @ 1.2A, 6A

1mA

-

100W

-

150°C (TJ)

Through Hole

TO-220-3

BCW60DT116

Rohm Semiconductor

TRANS NPN 32V 0.2A SST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: -
Frequency - Transition: 125MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,672

200mA

32V

-

380 @ 2mA, 5V

-

125MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

2SC5060TV2M

Rohm Semiconductor

TRANS NPN DARL 90V 1A ATV

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 3V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

패키지: 3-SIP

재고7,904

1A

90V

1.5V @ 1mA, 500mA

10µA (ICBO)

1000 @ 500mA, 3V

1W

80MHz

150°C (TJ)

Through Hole

3-SIP

ATV

MJE3055T

ON Semiconductor

TRANS NPN 60V 10A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 75W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고56,772

10A

60V

8V @ 3.3A, 10A

700µA

20 @ 4A, 4V

75W

2MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

ZXTP2012ZQTA

Diodes Incorporated

TRANS PNP 60V 4.3A SOT89

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,264

-

NSV1C301ET4G-VF01

ON Semiconductor

TRANS NPN 100V 3A 3DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Power - Max: 2.1W
Frequency - Transition: 120MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,472

3A

100V

250mV @ 300mA, 3A

100nA (ICBO)

120 @ 1A, 2V

2.1W

120MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

JANTX2N1711S

Microsemi Corporation

TRANS NPN 30V 0.5A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고6,528

500mA

30V

1.5V @ 15mA, 150mA

10nA (ICBO)

100 @ 150mA, 10V

800mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MMBT3904FA-7B

Diodes Incorporated

TRANS NPN 40V 0.2A X2-DFN0806-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 435mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: -

패키지: 3-XFDFN

재고2,576

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

435mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-XFDFN

-

2SC4546

Sanken

TRANS NPN 400V 7A TO220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 30W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고32,580

7A

400V

700mV @ 600mA, 3A

100µA (ICBO)

10 @ 3A, 4V

30W

10MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

BCX17LT1

onsemi

TRANS PNP 45V 500MA SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

Request a Quote

500 mA

45 V

620mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

225 mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SCR372PHZGT100Q

Rohm Semiconductor

TRANS NPN 120V 0.7A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: 220MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고2,400

700 mA

120 V

300mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 5V

500 mW

220MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

90024-01TX

Microchip Technology

TRANS NPN TO3

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

-

Through Hole

TO-204AA, TO-3

TO-3

BC846W-QF

Nexperia USA Inc.

BC846W-Q/SOT323/SC-70

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

Request a Quote

100 mA

65 V

400mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

CP710V-CMPTA96-CT

Central Semiconductor Corp

TRANS PNP 450V 0.5A DIE

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 450 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 350 mW
Frequency - Transition: 20MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

500 mA

450 V

500mV @ 5mA, 50mA

100nA (ICBO)

50 @ 10mA, 10V

350 mW

20MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

2N3782

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

3 A

40 V

750mV @ 200µA, 1mA

-

5 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N6676

Microchip Technology

TRANS NPN 300V 15A TO204AD

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

Request a Quote

15 A

300 V

1V @ 3A, 15A

100µA

15 @ 1A, 3V

6 W

-

-65°C ~ 200°C

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2N6381

Microchip Technology

TRANS PNP 100V 50A TO63

Transistor Type: PNP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 250 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-211MB, TO-63-4, Stud
Supplier Device Package: TO-63

패키지: -

Request a Quote

50 A

100 V

-

250 W

-

Stud Mount

TO-211MB, TO-63-4, Stud

TO-63

2SC3070-AE

onsemi

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Power - Max: 1 W
Frequency - Transition: 250MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

Request a Quote

1.2 A

25 V

500mV @ 10mA, 500mA

-

300 @ 10mA, 5V

1 W

250MHz

-

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

2N3421U4

Microchip Technology

TRANS NPN 80V 3A U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

Request a Quote

3 A

80 V

500mV @ 200mA, 2A

300nA

40 @ 1A, 2V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

CMST3904-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 275 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고137,112

200 mA

40 V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

275 mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

FZT855QTC

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.6 W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: -

재고11,970

5 A

150 V

355mV @ 500mA, 5A

50nA

100 @ 1A, 5V

1.6 W

90MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3