페이지 292 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSP62H6327XTSA1	Infineon Technologies	TRANS PNP DARL 80V 1A SOT223 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고2,016	1A	80V	1.8V @ 1mA, 1A	10µA	2000 @ 500mA, 10V	1.5W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
BDW83-S	Bourns Inc.	TRANS NPN DARL 45V 15A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고5,856	15A	45V	4V @ 150mA, 15A	1mA	750 @ 6A, 3V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
2SA2099	ON Semiconductor	TRANS PNP 50V 10A TO-220ML Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ML	패키지: TO-220-3 Full Pack	재고19,608	10A	50V	500mV @ 250mA, 5A	10µA (ICBO)	200 @ 1A, 2V	2W	130MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220ML
KSP8599CTA	Fairchild/ON Semiconductor	TRANS PNP 80V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 625mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,264	500mA	80V	400mV @ 5mA, 100mA	100nA	100 @ 1mA, 5V	625mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSP8098TA	Fairchild/ON Semiconductor	TRANS NPN 60V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 625mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,232	500mA	60V	300mV @ 10mA, 100mA	100nA	100 @ 1mA, 5V	625mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
JANTXV2N4150S	Microsemi Corporation	TRANS NPN 70V 10A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고3,472	10A	70V	2.5V @ 1A, 10A	10µA	40 @ 5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
TIP29C	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR BIPOLAR Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고219,696	1A	100V	700mV @ 125mA, 1A	300µA	40 @ 200mA, 4V	30W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
CPH3122-TL-E	ON Semiconductor	TRANS PNP 30V 3A CPH3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 180mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 420MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	패키지: SC-96	재고4,656	3A	30V	180mV @ 75mA, 1.5A	100nA (ICBO)	200 @ 500mA, 2V	900mW	420MHz	150°C (TJ)	Surface Mount	SC-96	3-CPH
PBSS5160QA	Nexperia USA Inc.	TRANS PNP 60V 1A 3DFN Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V Power - Max: 325mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	패키지: 3-XDFN Exposed Pad	재고3,168	1A	60V	460mV @ 50mA, 1A	100nA (ICBO)	85 @ 1A, 2V	325mW	150MHz	150°C (TJ)	Surface Mount	3-XDFN Exposed Pad	DFN1010D-3
2SCR544P5T100	Rohm Semiconductor	NPN 80V 2.5A MEDIUM POWER TRANSI Transistor Type: NPN Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 500mW Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고5,920	2.5A	80V	300mV @ 50mA, 1A	1µA (ICBO)	120 @ 100mA, 3V	500mW	280MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
MMST3904-TP	Micro Commercial Co	TRANS NPN 40V 0.2A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고6,112	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	200mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BSP60,115	Nexperia USA Inc.	TRANS PNP DARL 45V 1A SOT223 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.25W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고16,986	1A	45V	1.3V @ 500µA, 500mA	50nA	2000 @ 500mA, 10V	1.25W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PBSS5240Y,135	Nexperia USA Inc.	TRANS PNP 40V 2A 6TSSOP Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V Power - Max: 430mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고6,928	2A	40V	350mV @ 200mA, 2A	100nA (ICBO)	210 @ 1A, 2V	430mW	100MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
NZT660A	Fairchild/ON Semiconductor	TRANS PNP 60V 3A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 75MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	패키지: TO-261-4, TO-261AA	재고232,992	3A	60V	500mV @ 300mA, 3A	100nA (ICBO)	250 @ 500mA, 2V	2W	75MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
MMBT3904T	Fairchild/ON Semiconductor	TRANS NPN 40V 0.2A SOT-523F Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SOT-523F	패키지: SC-89, SOT-490	재고18,864	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	250mW	300MHz	150°C (TJ)	Surface Mount	SC-89, SOT-490	SOT-523F
CZT5551 TR	Central Semiconductor Corp	TRANS NPN 180V 0.6A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 2W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고142,680	600mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	2W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
DXT2222A-13	Diodes Incorporated	TRANS NPN 40V 0.6A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고1,693,080	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1W	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
NTE2317	NTE Electronics, Inc	TRANS NPN DARL 450V 15A TO3PN Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 450 V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 150mA, 8A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Power - Max: 105 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	패키지: -	Request a Quote	15 A	450 V	1.8V @ 150mA, 8A	1mA	300 @ 5A, 10V	105 W	-	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3PN
2N2924-PBFREE	Central Semiconductor Corp	TRANS NPN 25V TO92-3 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: 160MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: -	재고5,790	-	25 V	-	100nA (ICBO)	-	-	160MHz	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MMBT4403-EVL	Venkel	Transistor,SOT-23,40V,600mA,PNP Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 225 mW Frequency - Transition: 200MHz Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	패키지: -	Request a Quote	600 mA	40 V	750mV @ 50mA, 500mA	100nA	100 @ 150mA, 2V	225 mW	200MHz	-50°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
S8050-D-BP	Micro Commercial Co	TRANS NPN 25V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 1V Power - Max: 625 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	25 V	600mV @ 50mA, 500mA	100nA	160 @ 50mA, 1V	625 mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JAN2N2604	Microchip Technology	TRANS PNP 60V 0.03A TO46 Transistor Type: PNP Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	패키지: -	Request a Quote	30 mA	60 V	300mV @ 500µA, 10mA	10nA	60 @ 500µA, 5V	400 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
BCP76-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: 1.5 W Frequency - Transition: 10MHz Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	3 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 1A, 2V	1.5 W	10MHz	-55°C ~ 150°C	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N2771	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX2N336A	Microchip Technology	TRANS NPN 45V 0.01A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	10 mA	45 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
BC80725E6327	Infineon Technologies	TRANS PNP 45V 0.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3-11	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	330 mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3-11
DXTP58100CFDB-7	Diodes Incorporated	TRANS PNP 100V 2A 3DFN Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Power - Max: 690 mW Frequency - Transition: 135MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Supplier Device Package: U-DFN2020-3 (Type B)	패키지: -	재고8,580	2 A	100 V	185mV @ 200mA, 2A	100nA	160 @ 500mA, 2V	690 mW	135MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-UDFN Exposed Pad	U-DFN2020-3 (Type B)
2SB1386-P-TP	Micro Commercial Co	TRANS PNP 20V 5A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	5 A	20 V	1V @ 100mA, 4A	500nA (ICBO)	82 @ 500mA, 2V	500 mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89

BSP62H6327XTSA1

Infineon Technologies

TRANS PNP DARL 80V 1A SOT223

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고2,016

1A

80V

1.8V @ 1mA, 1A

10µA

2000 @ 500mA, 10V

1.5W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

BDW83-S

Bourns Inc.

TRANS NPN DARL 45V 15A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고5,856

15A

45V

4V @ 150mA, 15A

1mA

750 @ 6A, 3V

3.5W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

2SA2099

ON Semiconductor

TRANS PNP 50V 10A TO-220ML

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML

패키지: TO-220-3 Full Pack

재고19,608

10A

50V

500mV @ 250mA, 5A

10µA (ICBO)

200 @ 1A, 2V

2W

130MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220ML

KSP8599CTA

Fairchild/ON Semiconductor

TRANS PNP 80V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 625mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,264

500mA

80V

400mV @ 5mA, 100mA

100nA

100 @ 1mA, 5V

625mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSP8098TA

Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 625mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,232

500mA

60V

300mV @ 10mA, 100mA

100nA

100 @ 1mA, 5V

625mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

JANTXV2N4150S

Microsemi Corporation

TRANS NPN 70V 10A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고3,472

10A

70V

2.5V @ 1A, 10A

10µA

40 @ 5A, 5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

TIP29C

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR BIPOLAR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고219,696

1A

100V

700mV @ 125mA, 1A

300µA

40 @ 200mA, 4V

30W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

CPH3122-TL-E

ON Semiconductor

TRANS PNP 30V 3A CPH3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 420MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

패키지: SC-96

재고4,656

3A

30V

180mV @ 75mA, 1.5A

100nA (ICBO)

200 @ 500mA, 2V

900mW

420MHz

150°C (TJ)

Surface Mount

SC-96

3-CPH

PBSS5160QA

Nexperia USA Inc.

TRANS PNP 60V 1A 3DFN

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 1A, 2V
Power - Max: 325mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3

패키지: 3-XDFN Exposed Pad

재고3,168

1A

60V

460mV @ 50mA, 1A

100nA (ICBO)

85 @ 1A, 2V

325mW

150MHz

150°C (TJ)

Surface Mount

3-XDFN Exposed Pad

DFN1010D-3

2SCR544P5T100

Rohm Semiconductor

NPN 80V 2.5A MEDIUM POWER TRANSI

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500mW
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고5,920

2.5A

80V

300mV @ 50mA, 1A

1µA (ICBO)

120 @ 100mA, 3V

500mW

280MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

MMST3904-TP

Micro Commercial Co

TRANS NPN 40V 0.2A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고6,112

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

200mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BSP60,115

Nexperia USA Inc.

TRANS PNP DARL 45V 1A SOT223

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.25W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고16,986

1A

45V

1.3V @ 500µA, 500mA

50nA

2000 @ 500mA, 10V

1.25W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PBSS5240Y,135

Nexperia USA Inc.

TRANS PNP 40V 2A 6TSSOP

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Power - Max: 430mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고6,928

2A

40V

350mV @ 200mA, 2A

100nA (ICBO)

210 @ 1A, 2V

430mW

100MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

NZT660A

Fairchild/ON Semiconductor

TRANS PNP 60V 3A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

재고232,992

3A

60V

500mV @ 300mA, 3A

100nA (ICBO)

250 @ 500mA, 2V

2W

75MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

MMBT3904T

Fairchild/ON Semiconductor

TRANS NPN 40V 0.2A SOT-523F

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523F

패키지: SC-89, SOT-490

재고18,864

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

250mW

300MHz

150°C (TJ)

Surface Mount

SC-89, SOT-490

SOT-523F

CZT5551 TR

Central Semiconductor Corp

TRANS NPN 180V 0.6A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 2W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고142,680

600mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

2W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

DXT2222A-13

Diodes Incorporated

TRANS NPN 40V 0.6A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고1,693,080

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1W

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

NTE2317

NTE Electronics, Inc

TRANS NPN DARL 450V 15A TO3PN

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 150mA, 8A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Power - Max: 105 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN

패키지: -

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15 A

450 V

1.8V @ 150mA, 8A

1mA

300 @ 5A, 10V

105 W

-

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3PN

2N2924-PBFREE

Central Semiconductor Corp

TRANS NPN 25V TO92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: 160MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: -

재고5,790

-

25 V

-

100nA (ICBO)

-

160MHz

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MMBT4403-EVL

Venkel

Transistor,SOT-23,40V,600mA,PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 225 mW
Frequency - Transition: 200MHz
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

패키지: -

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600 mA

40 V

750mV @ 50mA, 500mA

100nA

100 @ 150mA, 2V

225 mW

200MHz

-50°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

S8050-D-BP

Micro Commercial Co

TRANS NPN 25V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 1V
Power - Max: 625 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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500 mA

25 V

600mV @ 50mA, 500mA

100nA

160 @ 50mA, 1V

625 mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

JAN2N2604

Microchip Technology

TRANS PNP 60V 0.03A TO46

Transistor Type: PNP
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)

패키지: -

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30 mA

60 V

300mV @ 500µA, 10mA

10nA

60 @ 500µA, 5V

400 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46 (TO-206AB)

BCP76-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: 1.5 W
Frequency - Transition: 10MHz
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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3 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 1A, 2V

1.5 W

10MHz

-55°C ~ 150°C

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N2771

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANTX2N336A

Microchip Technology

TRANS NPN 45V 0.01A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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10 mA

45 V

-

175°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

BC80725E6327

Infineon Technologies

TRANS PNP 45V 0.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3-11

패키지: -

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500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

330 mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3-11

DXTP58100CFDB-7

Diodes Incorporated

TRANS PNP 100V 2A 3DFN

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Power - Max: 690 mW
Frequency - Transition: 135MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-3 (Type B)

패키지: -

재고8,580

2 A

100 V

185mV @ 200mA, 2A

100nA

160 @ 500mA, 2V

690 mW

135MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-UDFN Exposed Pad

U-DFN2020-3 (Type B)

2SB1386-P-TP

Micro Commercial Co

TRANS PNP 20V 5A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Power - Max: 500 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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5 A

20 V

1V @ 100mA, 4A

500nA (ICBO)

82 @ 500mA, 2V

500 mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89