페이지 3 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CP647-CEN1103-WS	Central Semiconductor Corp	TRANS PNP DARLINGTON DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,520	-	-	-	-	-	-	-	-	-	-	-
JANTX2N6251T1	Microsemi Corporation	TRANS NPN 350V 10A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V Power - Max: 6W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	패키지: TO-254-3, TO-254AA (Straight Leads)	재고3,952	10A	350V	1.5V @ 1.67A, 10A	1mA	6 @ 10A, 3V	6W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA (Straight Leads)	TO-254AA
2N5400RLRPG	ON Semiconductor	TRANS PNP 120V 0.6A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,144	600mA	120V	500mV @ 5mA, 50mA	100nA (ICBO)	40 @ 10mA, 5V	625mW	400MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSD2058YTSTU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1.5W Frequency - Transition: 400kHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고5,440	3A	60V	1.5V @ 200mA, 2A	10µA (ICBO)	100 @ 500mA, 5V	1.5W	400kHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
BST62-70TA	Diodes Incorporated	TRANS PNP DARL 72V 0.5A SOT89 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 72V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고516,000	500mA	72V	1.3V @ 500µA, 500mA	10µA	1000 @ 150mA, 10V	1W	-	-	Surface Mount	TO-243AA	SOT-89-3
2SB09480P	Panasonic Electronic Components	TRANS PNP 20V 10A TO-220F Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	패키지: TO-220-3 Full Pack	재고7,616	10A	20V	600mV @ 330mA, 10A	50µA (ICBO)	130 @ 3A, 2V	2W	100MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-A1
PN2222G	ON Semiconductor	TRANS NPN 30V 0.6A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,376	600mA	30V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	250MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SB1186AE	Rohm Semiconductor	TRANS PNP 160V 1.5A TO220FP Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	패키지: TO-220-3 Full Pack	재고3,344	1.5A	160V	2V @ 100mA, 1A	1µA (ICBO)	60 @ 1A, 5V	2W	50MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
JANTXV2N2221AL	Microsemi Corporation	TRANS NPN 50V 0.8A TO18 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고4,416	800mA	50V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
BUL59	STMicroelectronics	TRANS NPN 400V 8A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 5A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5A, 5V Power - Max: 90W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고6,960	8A	400V	1.5V @ 1A, 5A	200µA	6 @ 5A, 5V	90W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
2SA2039-TL-H	ON Semiconductor	TRANS PNP 50V 5A TP-FA Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 800mW Frequency - Transition: 360MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,000	5A	50V	430mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 2V	800mW	360MHz	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
2SA1832-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고3,504	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
DSC7101S0L	Panasonic Electronic Components	TRANS NPN 80V 0.5A MINIP3 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F2-B	패키지: TO-243AA	재고36,000	500mA	80V	400mV @ 30mA, 300mA	100nA (ICBO)	185 @ 150mA, 10V	1W	150MHz	150°C (TJ)	Surface Mount	TO-243AA	MiniP3-F2-B
FJT44KTF	Fairchild/ON Semiconductor	TRANS NPN 400V 0.3A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	패키지: TO-261-4, TO-261AA	재고90,000	300mA	400V	750mV @ 5mA, 50mA	500nA	50 @ 10mA, 10V	2W	-	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
ZTX849	Diodes Incorporated	TRANS NPN 30V 5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 1.2W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고154,332	5A	30V	220mV @ 200mA, 5A	50nA (ICBO)	100 @ 1A, 1V	1.2W	100MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
2SC4081T106S	Rohm Semiconductor	TRANS NPN 50V 0.15A SOT-323 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고2,848,884	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	200mW	180MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
2DA2018-7	Diodes Incorporated	TRANS PNP 12V 0.5A SOT523 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고1,116,000	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	270 @ 10mA, 2V	150mW	260MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
MJ802G	ON Semiconductor	TRANS NPN 90V 30A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V Power - Max: 200W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: TO-204AA, TO-3	재고5,936	30A	90V	800mV @ 750mA, 7.5A	1mA (ICBO)	25 @ 7.5A, 2V	200W	2MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
2SC2411KT146Q	Rohm Semiconductor	TRANS NPN 32V 0.5A SOT-346 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고176,244	500mA	32V	600mV @ 50mA, 500mA	1µA (ICBO)	120 @ 100mA, 3V	200mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
FMMT718TA	Diodes Incorporated	TRANS PNP 20V 1.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 625mW Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,865,096	1.5A	20V	220mV @ 50mA, 1.5A	100nA	300 @ 100mA, 2V	625mW	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC846BQB-QZ	Nexperia USA Inc.	SMALL SIGNAL BIPOLAR IN DFN PACK Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 340 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	패키지: -	재고14,100	100 mA	65 V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	340 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
2SCR553RTL	Rohm Semiconductor	TRANS NPN 50V 2A TSMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Power - Max: 500 mW Frequency - Transition: 360MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: TSMT3	패키지: -	재고6,699	2 A	50 V	350mV @ 35mA, 700mA	1µA (ICBO)	180 @ 50mA, 2V	500 mW	360MHz	150°C (TJ)	Surface Mount	SC-96	TSMT3
BC858B-AU_R1_000A1	Panjit International Inc.	TRANS PNP 30V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 200MHz Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고8,994	100 mA	30 V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	330 mW	200MHz	-50°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANTXV2N2222AP	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
JANS2N3439U4-TR	Microchip Technology	TRANSISTOR POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSM2N2221AUA	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 650 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	650 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
2SA1317T-AC	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 300 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: 3-SPA	패키지: -	Request a Quote	200 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 1mA, 6V	300 mW	200MHz	150°C (TJ)	Through Hole	3-SSIP	3-SPA
2SD1624T-C-TD-E	onsemi	BIP NPN 3A 50V Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 500 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: -	Request a Quote	3 A	50 V	500mV @ 100mA, 2A	1µA (ICBO)	200 @ 100mA, 2V	500 mW	150MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP

CP647-CEN1103-WS

Central Semiconductor Corp

TRANS PNP DARLINGTON DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,520

-

JANTX2N6251T1

Microsemi Corporation

TRANS NPN 350V 10A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA

패키지: TO-254-3, TO-254AA (Straight Leads)

재고3,952

10A

350V

1.5V @ 1.67A, 10A

1mA

6 @ 10A, 3V

6W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA (Straight Leads)

TO-254AA

2N5400RLRPG

ON Semiconductor

TRANS PNP 120V 0.6A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,144

600mA

120V

500mV @ 5mA, 50mA

100nA (ICBO)

40 @ 10mA, 5V

625mW

400MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSD2058YTSTU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1.5W
Frequency - Transition: 400kHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고5,440

3A

60V

1.5V @ 200mA, 2A

10µA (ICBO)

100 @ 500mA, 5V

1.5W

400kHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

BST62-70TA

Diodes Incorporated

TRANS PNP DARL 72V 0.5A SOT89

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 72V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고516,000

500mA

72V

1.3V @ 500µA, 500mA

10µA

1000 @ 150mA, 10V

1W

-

Surface Mount

TO-243AA

SOT-89-3

2SB09480P

Panasonic Electronic Components

TRANS PNP 20V 10A TO-220F

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 3A, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1

패키지: TO-220-3 Full Pack

재고7,616

10A

20V

600mV @ 330mA, 10A

50µA (ICBO)

130 @ 3A, 2V

2W

100MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-A1

PN2222G

ON Semiconductor

TRANS NPN 30V 0.6A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,376

600mA

30V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

250MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SB1186AE

Rohm Semiconductor

TRANS PNP 160V 1.5A TO220FP

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

패키지: TO-220-3 Full Pack

재고3,344

1.5A

160V

2V @ 100mA, 1A

1µA (ICBO)

60 @ 1A, 5V

2W

50MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FP

JANTXV2N2221AL

Microsemi Corporation

TRANS NPN 50V 0.8A TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고4,416

800mA

50V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

BUL59

STMicroelectronics

TRANS NPN 400V 8A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5A, 5V
Power - Max: 90W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고6,960

8A

400V

1.5V @ 1A, 5A

200µA

6 @ 5A, 5V

90W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

2SA2039-TL-H

ON Semiconductor

TRANS PNP 50V 5A TP-FA

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 360MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,000

5A

50V

430mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 2V

800mW

360MHz

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

2SA1832-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고3,504

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

DSC7101S0L

Panasonic Electronic Components

TRANS NPN 80V 0.5A MINIP3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2-B

패키지: TO-243AA

재고36,000

500mA

80V

400mV @ 30mA, 300mA

100nA (ICBO)

185 @ 150mA, 10V

1W

150MHz

150°C (TJ)

Surface Mount

TO-243AA

MiniP3-F2-B

FJT44KTF

Fairchild/ON Semiconductor

TRANS NPN 400V 0.3A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

재고90,000

300mA

400V

750mV @ 5mA, 50mA

500nA

50 @ 10mA, 10V

2W

-

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

ZTX849

Diodes Incorporated

TRANS NPN 30V 5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고154,332

5A

30V

220mV @ 200mA, 5A

50nA (ICBO)

100 @ 1A, 1V

1.2W

100MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

2SC4081T106S

Rohm Semiconductor

TRANS NPN 50V 0.15A SOT-323

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고2,848,884

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

200mW

180MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

2DA2018-7

Diodes Incorporated

TRANS PNP 12V 0.5A SOT523

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고1,116,000

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

270 @ 10mA, 2V

150mW

260MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-523

MJ802G

ON Semiconductor

TRANS NPN 90V 30A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Power - Max: 200W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: TO-204AA, TO-3

재고5,936

30A

90V

800mV @ 750mA, 7.5A

1mA (ICBO)

25 @ 7.5A, 2V

200W

2MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

2SC2411KT146Q

Rohm Semiconductor

TRANS NPN 32V 0.5A SOT-346

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고176,244

500mA

32V

600mV @ 50mA, 500mA

1µA (ICBO)

120 @ 100mA, 3V

200mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

FMMT718TA

Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 625mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,865,096

1.5A

20V

220mV @ 50mA, 1.5A

100nA

300 @ 100mA, 2V

625mW

180MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC846BQB-QZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 340 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

패키지: -

재고14,100

100 mA

65 V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

340 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1110D-3

2SCR553RTL

Rohm Semiconductor

TRANS NPN 50V 2A TSMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Power - Max: 500 mW
Frequency - Transition: 360MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3

패키지: -

재고6,699

2 A

50 V

350mV @ 35mA, 700mA

1µA (ICBO)

180 @ 50mA, 2V

500 mW

360MHz

150°C (TJ)

Surface Mount

SC-96

TSMT3

BC858B-AU_R1_000A1

Panjit International Inc.

TRANS PNP 30V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 200MHz
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고8,994

100 mA

30 V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

330 mW

200MHz

-50°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANTXV2N2222AP

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

JANS2N3439U4-TR

Microchip Technology

TRANSISTOR POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANSM2N2221AUA

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 650 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

650 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

2SA1317T-AC

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Power - Max: 300 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: 3-SPA

패키지: -

Request a Quote

200 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 1mA, 6V

300 mW

200MHz

150°C (TJ)

Through Hole

3-SSIP

3-SPA

2SD1624T-C-TD-E

onsemi

BIP NPN 3A 50V

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 500 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: -

Request a Quote

3 A

50 V

500mV @ 100mA, 2A

1µA (ICBO)

200 @ 100mA, 2V

500 mW

150MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP