페이지 6 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PN930_D75Z	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10µA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,896	100mA	45V	1V @ 500µA, 10mA	10nA	10 @ 10µA, 5V	625mW	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIP32BTU	Fairchild/ON Semiconductor	TRANS PNP 80V 3A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고159,948	3A	80V	1.2V @ 375mA, 3A	200µA	10 @ 3A, 4V	2W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSE800STSSTU	Fairchild/ON Semiconductor	TRANS NPN DARL 60V 4A TO-126 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고2,928	4A	60V	2.5V @ 30mA, 1.5A	100µA	750 @ 1.5A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
STF724	STMicroelectronics	TRANS NPN 30V 3A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1.4W Frequency - Transition: 100MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고1,006,584	3A	30V	1.1V @ 150mA, 3A	100µA	100 @ 100mA, 2V	1.4W	100MHz	-	Surface Mount	TO-243AA	SOT-89-3
BCY59VIII	STMicroelectronics	TRANS NPN 45V 0.2A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 390mW Frequency - Transition: 200MHz Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고16,140	200mA	45V	700mV @ 2.5mA, 100mA	10nA	180 @ 2mA, 5V	390mW	200MHz	175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
ZTX449STOA	Diodes Incorporated	TRANS NPN 30V 1A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고2,320	1A	30V	1V @ 200mA, 2A	100nA (ICBO)	100 @ 500mA, 2V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
TIP145G	ON Semiconductor	TRANS PNP DARL 60V 10A TO-218 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고6,512	10A	60V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TIP32B	ON Semiconductor	TRANS PNP 80V 3A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,760	3A	80V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
ZTX790ASTZ	Diodes Incorporated	TRANS PNP 40V 2A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고6,656	2A	40V	750mV @ 50mA, 2A	100nA (ICBO)	300 @ 10mA, 2V	1W	100MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
NJVMJD127T4G	ON Semiconductor	IC TRANS PNP 8A 100V DPAK Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Power - Max: 20W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,088	8A	100V	4V @ 80mA, 8A	10µA	1000 @ 4A, 4V	20W	-	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
2SA1552S-TL-H	ON Semiconductor	TRANS PNP 160V 1.5A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,280	1.5A	160V	500mV @ 50mA, 500mA	1µA (ICBO)	100 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
PBSS302NDH	Nexperia USA Inc.	TRANS NPN 40V 4A 6TSOP Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Power - Max: 360mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고3,296	4A	40V	450mV @ 600mA, 6A	100nA (ICBO)	250 @ 2A, 2V	360mW	150MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
2N3583	Central Semiconductor Corp	TRANS NPN 175V 1A TO-66 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 5V @ 125mA, 1A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Power - Max: 35W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	패키지: TO-213AA, TO-66-2	재고6,012	1A	175V	5V @ 125mA, 1A	10mA	40 @ 500mA, 10V	35W	10MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66
2SD09660Q	Panasonic Electronic Components	TRANS NPN 20V 5A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L-A1	패키지: TO-226-3, TO-92-3 Long Body	재고6,272	5A	20V	1V @ 100mA, 3A	100nA (ICBO)	230 @ 500mA, 2V	1W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92L-A1
2SCR293P5T100	Rohm Semiconductor	NPN MIDDLE POWER DRIVER TRANSIST Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Power - Max: 500mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고14,628	1A	30V	350mV @ 25mA, 500mA	100nA (ICBO)	270 @ 100mA, 2V	500mW	320MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
PN2907ATF	Fairchild/ON Semiconductor	TRANS PNP 60V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,768	800mA	60V	1.6V @ 50mA, 500mA	20nA (ICBO)	100 @ 150mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
SMBTA92E6327HTSA1	Infineon Technologies	TRANS PNP 300V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 360mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고149,934	500mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	25 @ 30mA, 10V	360mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BD240CTU	Fairchild/ON Semiconductor	TRANS PNP 100V 2A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 30W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고21,600	2A	100V	700mV @ 200mA, 1A	300µA	15 @ 1A, 4V	30W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
MMBTA55-TP	Micro Commercial Co	TRANS PNP 60V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 225mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고98,682	500mA	60V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	225mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NTE284MP	NTE Electronics, Inc	TRANS NPN 180V 16A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 180 V Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2A, 5V Power - Max: 150 W Frequency - Transition: 6MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	16 A	180 V	3V @ 1A, 10A	100µA (ICBO)	70 @ 2A, 5V	150 W	6MHz	150°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
JANKCAP2N2369A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	500 mW	-	-65°C ~ 200°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2N5238S	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 170 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	10 A	170 V	2.5V @ 1A, 10A	10µA	50 @ 1A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N5882	Microchip Technology	NPN POWER TRANSISTOR SILICON AMP Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 160 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	15 A	80 V	-	-	-	160 W	-	-	Through Hole	TO-204AA, TO-3	TO-3
NTE245	NTE Electronics, Inc	TRANS NPN DARL 80V 10A TO3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 4V @ 50mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Power - Max: 150 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	10 A	80 V	4V @ 50mA, 10A	1mA	1000 @ 5A, 3V	150 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
NTE254	NTE Electronics, Inc	TRANS PNP DARL 80V 4A TO126 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40 W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	4 A	80 V	3V @ 40mA, 4A	100µA	750 @ 2A, 3V	40 W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2C3440	Microchip Technology	TRANSISTOR POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
KTA1664-O-TP	Micro Commercial Co	TRANS PNP 30V 0.8A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	800 mA	30 V	700mV @ 20mA, 500mA	100nA (ICBO)	100 @ 1A, 2V	500 mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
FZT855QTA	Diodes Incorporated	PWR HI VOLTAGE TRANSISTOR SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 1.6 W Frequency - Transition: 90MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: -	재고2,955	5 A	150 V	355mV @ 500mA, 5A	50nA	100 @ 1A, 5V	1.6 W	90MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3

PN930_D75Z

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10µA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,896

100mA

45V

1V @ 500µA, 10mA

10nA

10 @ 10µA, 5V

625mW

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIP32BTU

Fairchild/ON Semiconductor

TRANS PNP 80V 3A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고159,948

3A

80V

1.2V @ 375mA, 3A

200µA

10 @ 3A, 4V

2W

3MHz

150°C (TJ)

Through Hole

TO-220-3

KSE800STSSTU

Fairchild/ON Semiconductor

TRANS NPN DARL 60V 4A TO-126

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고2,928

4A

60V

2.5V @ 30mA, 1.5A

100µA

750 @ 1.5A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

STF724

STMicroelectronics

TRANS NPN 30V 3A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 150mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 1.4W
Frequency - Transition: 100MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고1,006,584

3A

30V

1.1V @ 150mA, 3A

100µA

100 @ 100mA, 2V

1.4W

100MHz

-

Surface Mount

TO-243AA

SOT-89-3

BCY59VIII

STMicroelectronics

TRANS NPN 45V 0.2A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 390mW
Frequency - Transition: 200MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고16,140

200mA

45V

700mV @ 2.5mA, 100mA

10nA

180 @ 2mA, 5V

390mW

200MHz

175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

ZTX449STOA

Diodes Incorporated

TRANS NPN 30V 1A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고2,320

1A

30V

1V @ 200mA, 2A

100nA (ICBO)

100 @ 500mA, 2V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

TIP145G

ON Semiconductor

TRANS PNP DARL 60V 10A TO-218

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고6,512

10A

60V

3V @ 40mA, 10A

2mA

1000 @ 5A, 4V

125W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-247-3

TIP32B

ON Semiconductor

TRANS PNP 80V 3A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,760

3A

80V

1.2V @ 375mA, 3A

300µA

10 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

ZTX790ASTZ

Diodes Incorporated

TRANS PNP 40V 2A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고6,656

2A

40V

750mV @ 50mA, 2A

100nA (ICBO)

300 @ 10mA, 2V

1W

100MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

NJVMJD127T4G

ON Semiconductor

IC TRANS PNP 8A 100V DPAK

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 20W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,088

8A

100V

4V @ 80mA, 8A

10µA

1000 @ 4A, 4V

20W

-

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

2SA1552S-TL-H

ON Semiconductor

TRANS PNP 160V 1.5A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,280

1.5A

160V

500mV @ 50mA, 500mA

1µA (ICBO)

100 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

PBSS302NDH

Nexperia USA Inc.

TRANS NPN 40V 4A 6TSOP

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Power - Max: 360mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고3,296

4A

40V

450mV @ 600mA, 6A

100nA (ICBO)

250 @ 2A, 2V

360mW

150MHz

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

2N3583

Central Semiconductor Corp

TRANS NPN 175V 1A TO-66

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 175V
Vce Saturation (Max) @ Ib, Ic: 5V @ 125mA, 1A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 35W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66

패키지: TO-213AA, TO-66-2

재고6,012

1A

175V

5V @ 125mA, 1A

10mA

40 @ 500mA, 10V

35W

10MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66

2SD09660Q

Panasonic Electronic Components

TRANS NPN 20V 5A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92L-A1

패키지: TO-226-3, TO-92-3 Long Body

재고6,272

5A

20V

1V @ 100mA, 3A

100nA (ICBO)

230 @ 500mA, 2V

1W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92L-A1

2SCR293P5T100

Rohm Semiconductor

NPN MIDDLE POWER DRIVER TRANSIST

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 500mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고14,628

1A

30V

350mV @ 25mA, 500mA

100nA (ICBO)

270 @ 100mA, 2V

500mW

320MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

PN2907ATF

Fairchild/ON Semiconductor

TRANS PNP 60V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,768

800mA

60V

1.6V @ 50mA, 500mA

20nA (ICBO)

100 @ 150mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

SMBTA92E6327HTSA1

Infineon Technologies

TRANS PNP 300V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 360mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고149,934

500mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

25 @ 30mA, 10V

360mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BD240CTU

Fairchild/ON Semiconductor

TRANS PNP 100V 2A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 30W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고21,600

2A

100V

700mV @ 200mA, 1A

300µA

15 @ 1A, 4V

30W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

MMBTA55-TP

Micro Commercial Co

TRANS PNP 60V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고98,682

500mA

60V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

225mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NTE284MP

NTE Electronics, Inc

TRANS NPN 180V 16A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2A, 5V
Power - Max: 150 W
Frequency - Transition: 6MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

16 A

180 V

3V @ 1A, 10A

100µA (ICBO)

70 @ 2A, 5V

150 W

6MHz

150°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

JANKCAP2N2369A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

-

15 V

450mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

500 mW

-

-65°C ~ 200°C

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

2N5238S

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 170 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

10 A

170 V

2.5V @ 1A, 10A

10µA

50 @ 1A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2N5882

Microchip Technology

NPN POWER TRANSISTOR SILICON AMP

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 160 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

15 A

80 V

-

160 W

-

Through Hole

TO-204AA, TO-3

TO-3

NTE245

NTE Electronics, Inc

TRANS NPN DARL 80V 10A TO3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 4V @ 50mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

10 A

80 V

4V @ 50mA, 10A

1mA

1000 @ 5A, 3V

150 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

NTE254

NTE Electronics, Inc

TRANS PNP DARL 80V 4A TO126

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

Request a Quote

4 A

80 V

3V @ 40mA, 4A

100µA

750 @ 2A, 3V

40 W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2C3440

Microchip Technology

TRANSISTOR POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

KTA1664-O-TP

Micro Commercial Co

TRANS PNP 30V 0.8A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 500 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

800 mA

30 V

700mV @ 20mA, 500mA

100nA (ICBO)

100 @ 1A, 2V

500 mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

FZT855QTA

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.6 W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: -

재고2,955

5 A

150 V

355mV @ 500mA, 5A

50nA

100 @ 1A, 5V

1.6 W

90MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3