페이지 397 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TIS97_D26Z	Fairchild/ON Semiconductor	TRANS NPN 40V 0.5A TO-92-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,800	500mA	40V	-	10nA (ICBO)	250 @ 100µA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PVR100AD-B3V3,115	NXP	TRANS NPN 45V 0.1A 6TSOP Transistor Type: NPN + Zener Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: SC-74, SOT-457	재고6,800	100mA	45V	-	100nA (ICBO)	160 @ 100mA, 1V	300mW	-	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
MPS3646RLRA	ON Semiconductor	TRANS NPN 15V 0.3A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 625mW Frequency - Transition: 350MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,224	300mA	15V	500mV @ 30mA, 300mA	500nA	30 @ 30mA, 400mV	625mW	350MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC1009GTA	Fairchild/ON Semiconductor	TRANS NPN 140V 0.7A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Power - Max: 800mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,216	700mA	140V	700mV @ 20mA, 200mA	100nA (ICBO)	200 @ 50mA, 2V	800mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ESM2012DV	STMicroelectronics	TRANS NPN DARL 120V 120A ISOTOP Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 120A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 100A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 100A, 5V Power - Max: 175W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	패키지: ISOTOP	재고6,384	120A	120V	1.5V @ 1A, 100A	-	1200 @ 100A, 5V	175W	-	150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
BUT90	STMicroelectronics	TRANS NPN 125V 50A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 250W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: TO-204AA, TO-3	재고3,328	50A	125V	900mV @ 7A, 70A	-	-	250W	-	200°C (TJ)	Chassis Mount	TO-204AA, TO-3	TO-3
ZTX955STOB	Diodes Incorporated	TRANS PNP 140V 3A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고2,288	3A	140V	330mV @ 300mA, 3A	50nA (ICBO)	100 @ 1A, 5V	1.2W	110MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BD679	ON Semiconductor	TRANS NPN DARL 80V 4A TO225 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고43,128	4A	80V	2.5V @ 30mA, 1.5A	500µA	750 @ 1.5A, 3V	40W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
2N3439	STMicroelectronics	TRANS NPN 350V 1A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 15MHz Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고38,040	1A	350V	500mV @ 4mA, 50mA	20µA	40 @ 20mA, 10V	1W	15MHz	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MMBT3904-7	Diodes Incorporated	TRANS NPN 40V 0.2A SMD SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고100,068	200mA	40V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	300mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
TIP30	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고6,272	1A	40V	700mV @ 125mA, 1A	300µA	40 @ 200mA, 4V	30W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2SA2124-TD-E	ON Semiconductor	TRANS PNP 30V 2A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 1.3W Frequency - Transition: 440MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고396,000	2A	30V	400mV @ 75mA, 1.5A	100nA (ICBO)	200 @ 100mA, 5V	1.3W	440MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
PMBT3904MB,315	Nexperia USA Inc.	TRANS NPN 40V 0.2A 3DFN Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006B (0.6x1)	패키지: 3-XFDFN	재고4,400	200mA	40V	200mV @ 1mA, 10mA	500nA (ICBO)	100 @ 10mA, 1V	250mW	300MHz	150°C (TJ)	Surface Mount	3-XFDFN	3-DFN1006B (0.6x1)
TIP50G	ON Semiconductor	TRANS NPN 400V 1A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 2W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고114,276	1A	400V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	2W	10MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
STN83003	STMicroelectronics	TRANS NPN 400V 1.5A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V Power - Max: 1.6W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고33,732	1.5A	400V	500mV @ 100mA, 500mA	1mA	16 @ 350mA, 5V	1.6W	-	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BCV71,215	Nexperia USA Inc.	TRANS NPN 60V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,520	100mA	60V	210mV @ 2.5mA, 50mA	100nA (ICBO)	110 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MMST5551-7-F	Diodes Incorporated	TRANS NPN 160V 0.2A SC70-3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고36,000	200mA	160V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	200mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
ZXTP23015CFHTA	Diodes Incorporated	TRANS PNP 15V 5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 190mV @ 240mA, 6A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1.25W Frequency - Transition: 270MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고468,480	5A	15V	190mV @ 240mA, 6A	20nA	200 @ 500mA, 2V	1.25W	270MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PMBTA42-QR	Nexperia USA Inc.	PMBTA42-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 250 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	100 mA	300 V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	250 mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
CPH3249-TL-E	onsemi	TRANS NPN 350V 1A 3CPH Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 900 mW Frequency - Transition: 20MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	패키지: -	Request a Quote	1 A	350 V	800mV @ 100mA, 500mA	10µA (ICBO)	100 @ 100mA, 5V	900 mW	20MHz	-	Surface Mount	SC-96	3-CPH
BCX53-16-TPS01	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	500 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANSP2N5153L	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
BC847CW-MIX	Nexperia USA Inc.	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BC847B-QVL	Nexperia USA Inc.	TRANS NPN 45V 0.1A TO236AB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
ASS8050-L-HF	Comchip Technology	TRANS NPN 25V 1.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	1.5 A	25 V	500mV @ 80mA, 800mA	100nA (ICBO)	120 @ 100mA, 1V	300 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC536KE-NP-AA	onsemi	SMALL SIGNAL NPN SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2462LDTR-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR, Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V Power - Max: 150 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	패키지: -	Request a Quote	100 mA	40 V	200mV @ 1mA, 10mA	500nA (ICBO)	250 @ 2mA, 12V	150 mW	-	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
BC807-25B5000	Infineon Technologies	TRANS PNP 45V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	330 mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23

TIS97_D26Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.5A TO-92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,800

500mA

40V

-

10nA (ICBO)

250 @ 100µA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PVR100AD-B3V3,115

NXP

TRANS NPN 45V 0.1A 6TSOP

Transistor Type: NPN + Zener
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: SC-74, SOT-457

재고6,800

100mA

45V

-

100nA (ICBO)

160 @ 100mA, 1V

300mW

-

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

MPS3646RLRA

ON Semiconductor

TRANS NPN 15V 0.3A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Power - Max: 625mW
Frequency - Transition: 350MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,224

300mA

15V

500mV @ 30mA, 300mA

500nA

30 @ 30mA, 400mV

625mW

350MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC1009GTA

Fairchild/ON Semiconductor

TRANS NPN 140V 0.7A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,216

700mA

140V

700mV @ 20mA, 200mA

100nA (ICBO)

200 @ 50mA, 2V

800mW

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ESM2012DV

STMicroelectronics

TRANS NPN DARL 120V 120A ISOTOP

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 120A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 100A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 100A, 5V
Power - Max: 175W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

패키지: ISOTOP

재고6,384

120A

120V

1.5V @ 1A, 100A

-

1200 @ 100A, 5V

175W

-

150°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

BUT90

STMicroelectronics

TRANS NPN 125V 50A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 125V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 250W
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: TO-204AA, TO-3

재고3,328

50A

125V

900mV @ 7A, 70A

-

250W

-

200°C (TJ)

Chassis Mount

TO-204AA, TO-3

TO-3

ZTX955STOB

Diodes Incorporated

TRANS PNP 140V 3A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고2,288

3A

140V

330mV @ 300mA, 3A

50nA (ICBO)

100 @ 1A, 5V

1.2W

110MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BD679

ON Semiconductor

TRANS NPN DARL 80V 4A TO225

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고43,128

4A

80V

2.5V @ 30mA, 1.5A

500µA

750 @ 1.5A, 3V

40W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

2N3439

STMicroelectronics

TRANS NPN 350V 1A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 15MHz
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고38,040

1A

350V

500mV @ 4mA, 50mA

20µA

40 @ 20mA, 10V

1W

15MHz

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MMBT3904-7

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고100,068

200mA

40V

300mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

300mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

TIP30

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-BIPOLAR

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고6,272

1A

40V

700mV @ 125mA, 1A

300µA

40 @ 200mA, 4V

30W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

2SA2124-TD-E

ON Semiconductor

TRANS PNP 30V 2A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 1.3W
Frequency - Transition: 440MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고396,000

2A

30V

400mV @ 75mA, 1.5A

100nA (ICBO)

200 @ 100mA, 5V

1.3W

440MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

PMBT3904MB,315

Nexperia USA Inc.

TRANS NPN 40V 0.2A 3DFN

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)

패키지: 3-XFDFN

재고4,400

200mA

40V

200mV @ 1mA, 10mA

500nA (ICBO)

100 @ 10mA, 1V

250mW

300MHz

150°C (TJ)

Surface Mount

3-XFDFN

3-DFN1006B (0.6x1)

TIP50G

ON Semiconductor

TRANS NPN 400V 1A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고114,276

1A

400V

1V @ 200mA, 1A

1mA

30 @ 300mA, 10V

2W

10MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

STN83003

STMicroelectronics

TRANS NPN 400V 1.5A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Power - Max: 1.6W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고33,732

1.5A

400V

500mV @ 100mA, 500mA

1mA

16 @ 350mA, 5V

1.6W

-

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BCV71,215

Nexperia USA Inc.

TRANS NPN 60V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,520

100mA

60V

210mV @ 2.5mA, 50mA

100nA (ICBO)

110 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MMST5551-7-F

Diodes Incorporated

TRANS NPN 160V 0.2A SC70-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고36,000

200mA

160V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

200mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

ZXTP23015CFHTA

Diodes Incorporated

TRANS PNP 15V 5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 240mA, 6A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.25W
Frequency - Transition: 270MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고468,480

5A

15V

190mV @ 240mA, 6A

20nA

200 @ 500mA, 2V

1.25W

270MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PMBTA42-QR

Nexperia USA Inc.

PMBTA42-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 250 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

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100 mA

300 V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

250 mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

CPH3249-TL-E

onsemi

TRANS NPN 350V 1A 3CPH

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 900 mW
Frequency - Transition: 20MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

패키지: -

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1 A

350 V

800mV @ 100mA, 500mA

10µA (ICBO)

100 @ 100mA, 5V

900 mW

20MHz

-

Surface Mount

SC-96

3-CPH

BCX53-16-TPS01

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

500 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANSP2N5153L

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

BC847CW-MIX

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BC847B-QVL

Nexperia USA Inc.

TRANS NPN 45V 0.1A TO236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

ASS8050-L-HF

Comchip Technology

TRANS NPN 25V 1.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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1.5 A

25 V

500mV @ 80mA, 800mA

100nA (ICBO)

120 @ 100mA, 1V

300 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC536KE-NP-AA

onsemi

SMALL SIGNAL NPN SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2462LDTR-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR,

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
Power - Max: 150 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

패키지: -

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100 mA

40 V

200mV @ 1mA, 10mA

500nA (ICBO)

250 @ 2mA, 12V

150 mW

-

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

BC807-25B5000

Infineon Technologies

TRANS PNP 45V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

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500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

330 mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23