페이지 398 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N5134	Central Semiconductor Corp	TRANSISTOR NPN TO-106 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V Power - Max: - Frequency - Transition: 250MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	패키지: TO-106-3 Domed	재고7,424	-	10V	-	400nA (ICBO)	20 @ 10mA, 1V	-	250MHz	-	Through Hole	TO-106-3 Domed	TO-106
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	패키지: TO-226-3, TO-92-3 Long Body	재고6,208	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	LSTM
JANTXV2N3735	Microsemi Corporation	TRANS NPN 40V 1.5A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고2,640	1.5A	40V	900mV @ 100mA, 1A	10µA (ICBO)	20 @ 1A, 1.5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SC6114T2LR	Rohm Semiconductor	TRANS NPN 50V 0.1A VMN3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-72 Formed Leads Supplier Device Package: VMN3	패키지: SC-72 Formed Leads	재고3,296	100mA	50V	300mV @ 2.5mA, 25mA	100nA (ICBO)	180 @ 2mA, 6V	150mW	130MHz	150°C (TJ)	Surface Mount	SC-72 Formed Leads	VMN3
BC489G	ON Semiconductor	TRANS NPN 80V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,448	500mA	80V	300mV @ 100mA, 1A	100nA (ICBO)	60 @ 100mA, 2V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PBSS8110AS,126	NXP	TRANS NPN 100V 1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V Power - Max: 830mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,880	1A	100V	200mV @ 100mA, 1A	100nA	150 @ 250mA, 10V	830mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSD73Y	Fairchild/ON Semiconductor	TRANS NPN 60V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 10V Power - Max: 30W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고7,696	5A	60V	2V @ 500mA, 5A	5mA (ICBO)	120 @ 1A, 10V	30W	20MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSA473Y	Fairchild/ON Semiconductor	TRANS PNP 30V 3A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고3,984	3A	30V	800mV @ 200mA, 2A	1µA (ICBO)	120 @ 500mA, 2V	10W	100MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BC212B_D26Z	Fairchild/ON Semiconductor	TRANS PNP 50V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,912	100mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	350mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC548BTF	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,192	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N3906	STMicroelectronics	TRANS PNP 40V 0.2A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고10,644,024	200mA	40V	400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	625mW	250MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JAN2N3440L	Microsemi Corporation	TRANS NPN 250V 1A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고2,368	1A	250V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
FMMT415TD	Diodes Incorporated	TRANS NPN 100V 0.5A SOT23-3 Transistor Type: NPN - Avalanche Mode Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V Power - Max: 330mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고5,360	500mA	100V	500mV @ 1mA, 10mA	100nA (ICBO)	25 @ 10mA, 10V	330mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PBSS4041PZ,115	Nexperia USA Inc.	TRANS PNP 60V 5.7A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 5.7A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 285mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Power - Max: 2.6W Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고6,432	5.7A	60V	285mV @ 300mA, 6A	100nA	200 @ 2A, 2V	2.6W	110MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
DP0150BLP4-7B	Diodes Incorporated	TRANS PNP 50V 0.1A DFN1006H4-3 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 450mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: X2-DFN1006-3	패키지: 3-XFDFN	재고3,136	100mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	450mW	80MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-XFDFN	X2-DFN1006-3
BD788G	ON Semiconductor	TRANS PNP 60V 4A TO-225 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V Power - Max: 15W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고14,496	4A	60V	2.5V @ 800mA, 4A	100µA	40 @ 200mA, 3V	15W	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
2SC2712-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고28,122	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2N4235L	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	1 A	60 V	600mV @ 100mA, 1A	1mA	40 @ 100mA, 1V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MMBT5551_NL	onsemi	TRANS NPN 160V 0.6A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 350 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	600 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	350 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JANTX2N5151U3	Microchip Technology	TRANS PNP 80V 2A U3 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1.16 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	1mA	30 @ 2.5A, 5V	1.16 W	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U3
BC807-25HE3-TP	Micro Commercial Co	PNP TRANSISTORS, SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고20,970	500 mA	45 V	700mV @ 50mA, 500mA	200nA	160 @ 100mA, 1V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANSD2N3700UB-TR	Microchip Technology	TRANS NPN 80V 1A UB Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
PBSS304PX-QX	Nexperia USA Inc.	PBSS304PX-Q/SOT89/MPT3 Transistor Type: PNP Current - Collector (Ic) (Max): 4.2 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 310mV @ 210mA, 4.2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 600 mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	4.2 A	60 V	310mV @ 210mA, 4.2A	100nA (ICBO)	200 @ 1A, 2V	600 mW	130MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SD1247S	onsemi	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	2.5 A	25 V	400mV @ 75mA, 1.5A	100nA (ICBO)	140 @ 100mA, 2V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
2N5335	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6278	Microchip Technology	NPN TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC857BB5000	Infineon Technologies	TRANS PNP 45V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	패키지: -	Request a Quote	100 mA	45 V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	330 mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23
2SA562-Y-BP	Micro Commercial Co	TRANS PNP 30V 0.5A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	30 V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 100mA, 1V	500 mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

2N5134

Central Semiconductor Corp

TRANSISTOR NPN TO-106

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
Power - Max: -
Frequency - Transition: 250MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Supplier Device Package: TO-106

패키지: TO-106-3 Domed

재고7,424

-

10V

-

400nA (ICBO)

20 @ 10mA, 1V

-

250MHz

-

Through Hole

TO-106-3 Domed

TO-106

2SA965-Y(T6CANO,FM

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

패키지: TO-226-3, TO-92-3 Long Body

재고6,208

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

900mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

LSTM

JANTXV2N3735

Microsemi Corporation

TRANS NPN 40V 1.5A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고2,640

1.5A

40V

900mV @ 100mA, 1A

10µA (ICBO)

20 @ 1A, 1.5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SC6114T2LR

Rohm Semiconductor

TRANS NPN 50V 0.1A VMN3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-72 Formed Leads
Supplier Device Package: VMN3

패키지: SC-72 Formed Leads

재고3,296

100mA

50V

300mV @ 2.5mA, 25mA

100nA (ICBO)

180 @ 2mA, 6V

150mW

130MHz

150°C (TJ)

Surface Mount

SC-72 Formed Leads

VMN3

BC489G

ON Semiconductor

TRANS NPN 80V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,448

500mA

80V

300mV @ 100mA, 1A

100nA (ICBO)

60 @ 100mA, 2V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PBSS8110AS,126

NXP

TRANS NPN 100V 1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Power - Max: 830mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,880

1A

100V

200mV @ 100mA, 1A

100nA

150 @ 250mA, 10V

830mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSD73Y

Fairchild/ON Semiconductor

TRANS NPN 60V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 10V
Power - Max: 30W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고7,696

5A

60V

2V @ 500mA, 5A

5mA (ICBO)

120 @ 1A, 10V

30W

20MHz

150°C (TJ)

Through Hole

TO-220-3

KSA473Y

Fairchild/ON Semiconductor

TRANS PNP 30V 3A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고3,984

3A

30V

800mV @ 200mA, 2A

1µA (ICBO)

120 @ 500mA, 2V

10W

100MHz

150°C (TJ)

Through Hole

TO-220-3

BC212B_D26Z

Fairchild/ON Semiconductor

TRANS PNP 50V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,912

100mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

350mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC548BTF

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,192

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N3906

STMicroelectronics

TRANS PNP 40V 0.2A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고10,644,024

200mA

40V

400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

625mW

250MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

JAN2N3440L

Microsemi Corporation

TRANS NPN 250V 1A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고2,368

1A

250V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

FMMT415TD

Diodes Incorporated

TRANS NPN 100V 0.5A SOT23-3

Transistor Type: NPN - Avalanche Mode
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
Power - Max: 330mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고5,360

500mA

100V

500mV @ 1mA, 10mA

100nA (ICBO)

25 @ 10mA, 10V

330mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PBSS4041PZ,115

Nexperia USA Inc.

TRANS PNP 60V 5.7A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 285mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 2.6W
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고6,432

5.7A

60V

285mV @ 300mA, 6A

100nA

200 @ 2A, 2V

2.6W

110MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

DP0150BLP4-7B

Diodes Incorporated

TRANS PNP 50V 0.1A DFN1006H4-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 450mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1006-3

패키지: 3-XFDFN

재고3,136

100mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

450mW

80MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-XFDFN

X2-DFN1006-3

BD788G

ON Semiconductor

TRANS PNP 60V 4A TO-225

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 3V
Power - Max: 15W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고14,496

4A

60V

2.5V @ 800mA, 4A

100µA

40 @ 200mA, 3V

15W

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

2SC2712-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고28,122

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2N4235L

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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1 A

60 V

600mV @ 100mA, 1A

1mA

40 @ 100mA, 1V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MMBT5551_NL

onsemi

TRANS NPN 160V 0.6A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 350 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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600 mA

160 V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

350 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JANTX2N5151U3

Microchip Technology

TRANS PNP 80V 2A U3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1.16 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

1mA

30 @ 2.5A, 5V

1.16 W

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U3

BC807-25HE3-TP

Micro Commercial Co

PNP TRANSISTORS, SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고20,970

500 mA

45 V

700mV @ 50mA, 500mA

200nA

160 @ 100mA, 1V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANSD2N3700UB-TR

Microchip Technology

TRANS NPN 80V 1A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

10nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

PBSS304PX-QX

Nexperia USA Inc.

PBSS304PX-Q/SOT89/MPT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 4.2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 210mA, 4.2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 600 mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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4.2 A

60 V

310mV @ 210mA, 4.2A

100nA (ICBO)

200 @ 1A, 2V

600 mW

130MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SD1247S

onsemi

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

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2.5 A

25 V

400mV @ 75mA, 1.5A

100nA (ICBO)

140 @ 100mA, 2V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

2N5335

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N6278

Microchip Technology

NPN TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BC857BB5000

Infineon Technologies

TRANS PNP 45V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

패키지: -

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100 mA

45 V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

330 mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

2SA562-Y-BP

Micro Commercial Co

TRANS PNP 30V 0.5A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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500 mA

30 V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 100mA, 1V

500 mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92