페이지 592 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JANTXV2N5339U3	Microsemi Corporation	TRANS NPN 100V 5A SMD5 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고4,960	5A	100V	1.2V @ 500mA, 5A	100µA	60 @ 2A, 2V	1W	-	-65°C ~ 200°C (TJ)	Surface Mount	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BD746C-S	Bourns Inc.	TRANS PNP 100V 20A Transistor Type: PNP Current - Collector (Ic) (Max): 20A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 20A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고3,312	20A	100V	3V @ 5A, 20A	100µA	20 @ 5A, 4V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
BC859CLT1G	ON Semiconductor	TRANS PNP 30V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고72,000	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC327-025G	ON Semiconductor	TRANS PNP 45V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고170,280	800mA	45V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	260MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SS9015CBU	Fairchild/ON Semiconductor	TRANS PNP 45V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Power - Max: 450mW Frequency - Transition: 190MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고10,008	100mA	45V	700mV @ 5mA, 100mA	50nA (ICBO)	200 @ 1mA, 5V	450mW	190MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
ZTX788ASTOB	Diodes Incorporated	TRANS PNP 15V 3A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 330mV @ 200mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고5,248	3A	15V	330mV @ 200mA, 3A	100nA (ICBO)	300 @ 10mA, 1V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BD3776STU	Fairchild/ON Semiconductor	TRANS NPN 60V 2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고2,496	2A	60V	1V @ 100mA, 1A	2µA (ICBO)	40 @ 150mA, 2V	25W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
2N5830	Fairchild/ON Semiconductor	TRANS NPN 100V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고40,716	200mA	100V	250mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JANTX2N2484UA	Microsemi Corporation	TRANS NPN 60V 0.05A Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: 4-SMD, No Lead	재고7,712	50mA	60V	300mV @ 100µA, 1mA	2nA	225 @ 10mA, 5V	360mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
KSH117TF	Fairchild/ON Semiconductor	TRANS PNP DARL 100V 2A DPAK Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Power - Max: 1.75W Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고38,280	2A	100V	3V @ 40mA, 4A	20µA	1000 @ 2A, 3V	1.75W	25MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
BSP33,115	Nexperia USA Inc.	TRANS PNP 80V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1.3W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고4,880	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 5V	1.3W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
PBSS5540Z,115	Nexperia USA Inc.	TRANS PNP 40V 5A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Power - Max: 2W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,696	5A	40V	160mV @ 200mA, 2A	100nA (ICBO)	150 @ 2A, 2V	2W	120MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BDX54C	STMicroelectronics	TRANS PNP DARL 100V 8A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 60W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고73,272	8A	100V	2V @ 12mA, 3A	500µA	750 @ 3A, 3V	60W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
PBHV9414ZX	Nexperia USA Inc.	TRANS PNP 140V 4A Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Power - Max: 650mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고3,776	4A	140V	550mV @ 400mA, 4A	100nA	100 @ 10mA, 5V	650mW	-	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SD21340RA	Panasonic Electronic Components	TRANS NPN 150V 1A MT-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2V @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-3-A1	패키지: 3-SIP	재고20,148	1A	150V	2V @ 50mA, 500mA	-	130 @ 150mA, 10V	1.5W	200MHz	150°C (TJ)	Through Hole	3-SIP	MT-3-A1
KSC2331YTA	Fairchild/ON Semiconductor	TRANS NPN 60V 0.7A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Power - Max: 1W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고5,296	700mA	60V	700mV @ 50mA, 500mA	100nA (ICBO)	120 @ 50mA, 2V	1W	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92-3
2N6288G	ON Semiconductor	TRANS NPN 30V 7A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V Power - Max: 40W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고12,846	7A	30V	3.5V @ 3A, 7A	1mA	30 @ 3A, 4V	40W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BD675G	ON Semiconductor	TRANS NPN DARL 45V 4A TO225 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고13,938	4A	45V	2.5V @ 30mA, 1.5A	500µA	750 @ 1.5A, 3V	40W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
MJD32CT4	STMicroelectronics	TRANS PNP 100V 3A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 15W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고1,190,880	3A	100V	1.2V @ 375mA, 3A	50µA	10 @ 3A, 4V	15W	-	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak
SST2222AT116	Rohm Semiconductor	TRANS NPN 40V 0.6A SST3 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,519,600	600mA	40V	1V @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 10V	350mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
FCX493TA	Diodes Incorporated	TRANS NPN 100V 1A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고359,988	1A	100V	600mV @ 100mA, 1A	100nA	100 @ 250mA, 10V	1W	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2N2432UB-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	100 mA	30 V	150mV @ 500µA, 10mA	10nA	80 @ 1mA, 5V	360 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC1815-BL-BP	Micro Commercial Co	TRANS NPN 50V 0.15A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 400 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	150 mA	50 V	250mV @ 10mA, 100mA	100nA	350 @ 2mA, 6V	400 mW	80MHz	-55°C ~ 125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JAN2N335AT2	Microchip Technology	TRANS NPN 45V 0.01A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	10 mA	45 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2SC5876U3HZGT106Q	Rohm Semiconductor	TRANS NPN 60V 0.5A UMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 200 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고70,470	500 mA	60 V	300mV @ 10mA, 100mA	1µA (ICBO)	120 @ 500mA, 2V	200 mW	300MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
2N3676	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 90 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 8 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	90 V	800mV @ 100µA, 1mA	-	-	8 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
CP327V-2N5308-WN	Central Semiconductor Corp	TRANS NPN DARL 40V 0.3A DIE Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: - Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	300 mA	40 V	1.4V @ 200µA, 200mA	100nA (ICBO)	7000 @ 2mA, 5V	-	60MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
CPH5703-TL-E	onsemi	BIP NPN+SBD Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

JANTXV2N5339U3

Microsemi Corporation

TRANS NPN 100V 5A SMD5

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고4,960

5A

100V

1.2V @ 500mA, 5A

100µA

60 @ 2A, 2V

1W

-

-65°C ~ 200°C (TJ)

Surface Mount

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BD746C-S

Bourns Inc.

TRANS PNP 100V 20A

Transistor Type: PNP
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고3,312

20A

100V

3V @ 5A, 20A

100µA

20 @ 5A, 4V

3.5W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

BC859CLT1G

ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고72,000

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC327-025G

ON Semiconductor

TRANS PNP 45V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고170,280

800mA

45V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

260MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

SS9015CBU

Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Power - Max: 450mW
Frequency - Transition: 190MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고10,008

100mA

45V

700mV @ 5mA, 100mA

50nA (ICBO)

200 @ 1mA, 5V

450mW

190MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

ZTX788ASTOB

Diodes Incorporated

TRANS PNP 15V 3A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 200mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고5,248

3A

15V

330mV @ 200mA, 3A

100nA (ICBO)

300 @ 10mA, 1V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BD3776STU

Fairchild/ON Semiconductor

TRANS NPN 60V 2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고2,496

2A

60V

1V @ 100mA, 1A

2µA (ICBO)

40 @ 150mA, 2V

25W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

2N5830

Fairchild/ON Semiconductor

TRANS NPN 100V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고40,716

200mA

100V

250mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JANTX2N2484UA

Microsemi Corporation

TRANS NPN 60V 0.05A

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: 4-SMD, No Lead

재고7,712

50mA

60V

300mV @ 100µA, 1mA

2nA

225 @ 10mA, 5V

360mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

KSH117TF

Fairchild/ON Semiconductor

TRANS PNP DARL 100V 2A DPAK

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1.75W
Frequency - Transition: 25MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고38,280

2A

100V

3V @ 40mA, 4A

20µA

1000 @ 2A, 3V

1.75W

25MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

BSP33,115

Nexperia USA Inc.

TRANS PNP 80V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1.3W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고4,880

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 5V

1.3W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

PBSS5540Z,115

Nexperia USA Inc.

TRANS PNP 40V 5A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,696

5A

40V

160mV @ 200mA, 2A

100nA (ICBO)

150 @ 2A, 2V

2W

120MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BDX54C

STMicroelectronics

TRANS PNP DARL 100V 8A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 60W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고73,272

8A

100V

2V @ 12mA, 3A

500µA

750 @ 3A, 3V

60W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

PBHV9414ZX

Nexperia USA Inc.

TRANS PNP 140V 4A

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 650mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고3,776

4A

140V

550mV @ 400mA, 4A

100nA

100 @ 10mA, 5V

650mW

-

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SD21340RA

Panasonic Electronic Components

TRANS NPN 150V 1A MT-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 2V @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-3-A1

패키지: 3-SIP

재고20,148

1A

150V

2V @ 50mA, 500mA

-

130 @ 150mA, 10V

1.5W

200MHz

150°C (TJ)

Through Hole

3-SIP

MT-3-A1

KSC2331YTA

Fairchild/ON Semiconductor

TRANS NPN 60V 0.7A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고5,296

700mA

60V

700mV @ 50mA, 500mA

100nA (ICBO)

120 @ 50mA, 2V

1W

50MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92-3

2N6288G

ON Semiconductor

TRANS NPN 30V 7A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Power - Max: 40W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고12,846

7A

30V

3.5V @ 3A, 7A

1mA

30 @ 3A, 4V

40W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BD675G

ON Semiconductor

TRANS NPN DARL 45V 4A TO225

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고13,938

4A

45V

2.5V @ 30mA, 1.5A

500µA

750 @ 1.5A, 3V

40W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

MJD32CT4

STMicroelectronics

TRANS PNP 100V 3A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 15W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고1,190,880

3A

100V

1.2V @ 375mA, 3A

50µA

10 @ 3A, 4V

15W

-

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

SST2222AT116

Rohm Semiconductor

TRANS NPN 40V 0.6A SST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,519,600

600mA

40V

1V @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 10V

350mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

FCX493TA

Diodes Incorporated

TRANS NPN 100V 1A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고359,988

1A

100V

600mV @ 100mA, 1A

100nA

100 @ 250mA, 10V

1W

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2N2432UB-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

100 mA

30 V

150mV @ 500µA, 10mA

10nA

80 @ 1mA, 5V

360 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC1815-BL-BP

Micro Commercial Co

TRANS NPN 50V 0.15A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 400 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

150 mA

50 V

250mV @ 10mA, 100mA

100nA

350 @ 2mA, 6V

400 mW

80MHz

-55°C ~ 125°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

JAN2N335AT2

Microchip Technology

TRANS NPN 45V 0.01A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

10 mA

45 V

-

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2SC5876U3HZGT106Q

Rohm Semiconductor

TRANS NPN 60V 0.5A UMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 200 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고70,470

500 mA

60 V

300mV @ 10mA, 100mA

1µA (ICBO)

120 @ 500mA, 2V

200 mW

300MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

2N3676

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 8 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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3 A

90 V

800mV @ 100µA, 1mA

-

8 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

CP327V-2N5308-WN

Central Semiconductor Corp

TRANS NPN DARL 40V 0.3A DIE

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Power - Max: -
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

300 mA

40 V

1.4V @ 200µA, 200mA

100nA (ICBO)

7000 @ 2mA, 5V

-

60MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

CPH5703-TL-E

onsemi

BIP NPN+SBD

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-