페이지 594 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 단일

기록 20,307
페이지  594/726
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SA1382,T6MIBF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고6,608
2A
50V
500mV @ 33mA, 1A
100nA (ICBO)
150 @ 500mA, 2V
900mW
110MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
BD250C-S
Bourns Inc.

TRANS PNP 100V 25A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 25A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 25A, 4V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3
  • Supplier Device Package: SOT-93
패키지: TO-218-3
재고3,728
25A
100V
4V @ 5A, 25A
1mA
5 @ 25A, 4V
3W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-218-3
SOT-93
2STA1837
STMicroelectronics

TRANS PNP 230V 1A TO-220FP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 20W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고2,240
1A
230V
1V @ 50mA, 500mA
1µA (ICBO)
100 @ 100mA, 5V
20W
70MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
MSD1328-ST1G
ON Semiconductor

TRANS NPN 20V 0.5A SC-59

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고7,504
500mA
20V
400mV @ 20mA, 500mA
100nA (ICBO)
300 @ 500mA, 2V
200mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
BC327,116
NXP

TRANS PNP 45V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,504
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 1V
625mW
80MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
JAN2N4261
Microsemi Corporation

TRANS PNP 15V 0.03A TO-72

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
패키지: TO-72-3 Metal Can
재고3,520
30mA
15V
350mV @ 1mA, 10mA
10µA (ICBO)
30 @ 10mA, 1V
200mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
2SC6076(TE16L1,NV)
Toshiba Semiconductor and Storage

TRANS NPN 80V 3A PW MOLD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 10W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,304
3A
80V
500mV @ 100mA, 1A
1µA (ICBO)
180 @ 500mA, 2V
10W
150MHz
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PW-MOLD
PBSS4630PA,115
Nexperia USA Inc.

TRANS NPN 30V 6A SOT1061

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2A, 2V
  • Power - Max: 2.1W
  • Frequency - Transition: 115MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: 3-HUSON (2x2)
패키지: 3-UDFN
재고4,912
6A
30V
275mV @ 300mA, 6A
100nA
260 @ 2A, 2V
2.1W
115MHz
150°C (TJ)
Surface Mount
3-UDFN
3-HUSON (2x2)
hot DSC7505R0L
Panasonic Electronic Components

TRANS NPN 20V 3A MINIP3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MiniP3-F2-B
패키지: TO-243AA
재고168,000
3A
20V
1V @ 100mA, 3A
100nA (ICBO)
340 @ 500mA, 2V
1W
200MHz
150°C (TJ)
Surface Mount
TO-243AA
MiniP3-F2-B
2SB1732TL
Rohm Semiconductor

TRANS PNP 12V 1.5A TUMT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
  • Power - Max: 400mW
  • Frequency - Transition: 400MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: TUMT3
패키지: 3-SMD, Flat Leads
재고5,424
1.5A
12V
200mV @ 25mA, 500mA
100nA (ICBO)
270 @ 200mA, 2V
400mW
400MHz
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
TUMT3
PHPT61010NYX
Nexperia USA Inc.

TRANS NPN BIPO 100V 10A 8LFPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 1A, 10A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 1.5W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-100, SOT-669
  • Supplier Device Package: LFPAK56, Power-SO8
패키지: SC-100, SOT-669
재고13,944
10A
100V
370mV @ 1A, 10A
100nA
150 @ 500mA, 2V
1.5W
145MHz
175°C (TJ)
Surface Mount
SC-100, SOT-669
LFPAK56, Power-SO8
hot MJD31T4G
ON Semiconductor

TRANS NPN 40V 3A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고15,516
3A
40V
1.2V @ 375mA, 3A
50µA
10 @ 3A, 4V
1.56W
3MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
hot TIP42A
STMicroelectronics

TRANS PNP 60V 6A TO-220

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 6A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고198,756
6A
60V
1.5V @ 600mA, 6A
700µA
15 @ 3A, 4V
2W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2SCR544PHZGT100
Rohm Semiconductor

TRANS NPN 30V 2A SOT89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 500 mW
  • Frequency - Transition: 320MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
패키지: -
재고5,805
2 A
30 V
300mV @ 50mA, 1A
1µA (ICBO)
120 @ 100mA, 3V
500 mW
320MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
FCX495QTA
Diodes Incorporated

TRANS NPN 150V 1A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: -
재고57,573
1 A
150 V
300mV @ 50mA, 500mA
100nA
100 @ 250mA, 10V
1 W
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
BC846B-DG-B4R
Nexperia USA Inc.

TRANS NPN 65V 0.1A TO236AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 65 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
패키지: -
Request a Quote
100 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
JANSP2N3499
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: -
Request a Quote
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANSF2N3019
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
패키지: -
Request a Quote
1 A
80 V
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
800 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
S8050-ML
MOSLEADER

25V 300mW 500mA NPN SOT-23

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MMBT5087LT1
onsemi

TRANS PNP 50V 50MA SOT23

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5200-O-S1-F
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-3PL PC=

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(L)
패키지: -
재고45
15 A
230 V
3V @ 800mA, 8A
5µA (ICBO)
55 @ 1A, 5V
150 W
30MHz
150°C (TJ)
Through Hole
TO-3PL
TO-3P(L)
MMBTA56-HF
Comchip Technology

TRANS PNP 80V 0.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 225 mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고5,700
500 mA
80 V
250mV @ 10mA, 100mA
1µA
100 @ 100mA, 1V
225 mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N2604
Microchip Technology

TRANS PNP 60V 0.03A TO46-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
  • Power - Max: 400 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
패키지: -
Request a Quote
30 mA
60 V
300mV @ 500µA, 10mA
10nA
60 @ 500µA, 5V
400 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
2N5551-BP
Micro Commercial Co

TRANS NPN 160V 0.6A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 625 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: -
Request a Quote
600 mA
160 V
500mV @ 5mA, 50mA
50nA (ICBO)
80 @ 10mA, 5V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2SCR502E3TL
Rohm Semiconductor

NPN, SOT-416, 30V 0.5A, GENERAL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 150 mW
  • Frequency - Transition: 360MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: EMT3
패키지: -
재고8,700
500 mA
30 V
300mV @ 10mA, 200mA
200nA (ICBO)
200 @ 100mA, 2V
150 mW
360MHz
150°C (TJ)
Surface Mount
SC-75, SOT-416
EMT3
2N3904-BP
Micro Commercial Co

TRANS NPN 40V 0.2A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: -
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200 mA
40 V
400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2SB985T-AE
Sanyo

PNP EPITAXIAL PLANAR SILICON

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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JANSF2N2907AL
Microchip Technology

RH SMALL-SIGNAL BJT

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: -
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600 mA
60 V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)