페이지 125 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON6974A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/30A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 30A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	패키지: 8-PowerVDFN	재고59,196	Logic Level Gate	30V	22A, 30A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI5933DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 2.7A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고4,256	Logic Level Gate	20V	2.7A	110 mOhm @ 2.7A, 4.5V	1V @ 250µA	7.7nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI4330DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,416	Logic Level Gate	30V	6.6A	16.5 mOhm @ 8.7A, 10V	3V @ 250µA	20nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS2DPF80	STMicroelectronics	MOSFET 2P-CH 80V 2A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 739pF @ 25V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고54,636	Logic Level Gate	80V	2A	250 mOhm @ 1A, 10V	4V @ 250µA	20nC @ 10V	739pF @ 25V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM120A20DG	Microsemi Corporation	MOSFET 2N-CH 1200V 50A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고4,496	Standard	1200V (1.2kV)	50A	240 mOhm @ 25A, 10V	5V @ 6mA	600nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
TSM4936DCS RLG	TSC America Inc.	MOSFET, DUAL, N-CHANNEL, TRENCH, FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,088	Standard	30V	5.9A (Ta)	36 mOhm @ 5.9A, 10V	3V @ 250µA	13nC @ 10V	610pF @ 15V	3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF8910TRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고689,976	Logic Level Gate	20V	10A	13.4 mOhm @ 10A, 10V	2.55V @ 250µA	11nC @ 4.5V	960pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7303TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 4.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고33,600	Standard	30V	4.9A	50 mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4670DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,085,856	Logic Level Gate	25V	8A	23 mOhm @ 7A, 10V	2.2V @ 250µA	18nC @ 10V	680pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC8097AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 150V FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고2,240	Standard	150V	2.4A (Ta), 900mA (Tc)	155 mOhm @ 2.4A, 10V	4V @ 250µA	6.2nC @ 10V	395pF @ 75V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
FDS4501H	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V/20V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고512,832	Logic Level Gate	30V, 20V	9.3A, 5.6A	18 mOhm @ 9.3A, 10V	3V @ 250µA	27nC @ 4.5V	1958pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSS84V-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SOT-563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고366,720	Logic Level Gate	50V	130mA	10 Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDS8858CZ	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 8.6A/7.3A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A, 7.3A Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고562,662	Logic Level Gate	30V	8.6A, 7.3A	17 mOhm @ 8.6A, 10V	3V @ 250µA	24nC @ 10V	1205pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA2002NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 2.9A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 650mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고1,212,000	Logic Level Gate	30V	2.9A	123 mOhm @ 2.9A, 4.5V	1.5V @ 250µA	3nC @ 4.5V	220pF @ 15V	650mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
MSCSM120HRM052NG	Microchip Technology	SIC 4N-CH 1200V/700V 472A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V Power - Max: 1.846kW (Tc), 1.161kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV), 700V	472A (Tc), 442A (Tc)	5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V	2.8V @ 18mA, 2.4V @ 16mA	1392nC @ 20V, 860nC @ 20V	18100pF @ 1000V, 18000pF @ 700V	1.846kW (Tc), 1.161kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SIL2623-TP	Micro Commercial Co	MOSFET 2P-CH 30V 3A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	패키지: -	Request a Quote	-	30V	3A	130mOhm @ 3A, 10V	3V @ 250µA	4.5nC @ 4.5V	240pF @ 25V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
AOCA32108E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 25A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (3.01x1.52)	패키지: -	Request a Quote	-	12V	25A (Ta)	3.8mOhm @ 5A, 4.5V	1.1V @ 250µA	32nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (3.01x1.52)
DMP22D5UDJ-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.36A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: -	재고29,700	-	20V	360mA (Ta)	1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.3nC @ 4.5V	17pF @ 15V	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTMFD1D6N03P8	onsemi	MOSFET 2N-CH 30V 17A/56A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	재고8,976	-	30V	17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)	5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V	3V @ 250µA, 3V @ 1mA	24nC @ 10V, 87nC @ 10V	1715pF @ 15V, 6430pF @ 15V	2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
FF3MR12KM1HOSA1	Infineon Technologies	SIC 2N-CH 1200V 375A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	패키지: -	Request a Quote	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
DMC62D0SVQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SOT563 T&R FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	SOT-563, SOT-666	SOT-563
UPA602T-T2-A	Renesas Electronics Corporation	MOSFET 2N-CH 50V 0.1A SC59 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-59-6 Supplier Device Package: SC-59	패키지: -	Request a Quote	Logic Level Gate	50V	100mA	25Ohm @ 10mA, 10V	1.8V @ 1µA	-	16pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-59-6	SC-59
SSF2120Y	Good-Ark Semiconductor	MOSFET, N+P, DUAL, 0.8 -0.4A, 20 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Power - Max: 312mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고17,958	-	20V	800mA (Tc), 400mA (Tc)	300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V	1V @ 250µA	1nC @ 4.5V	75pF @ 10V, 78pF @ 10V	312mW	-55°C ~ 150°C	Surface Mount	SOT-563, SOT-666	SOT-563
SQ4946AEY-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power - Max: 4W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	60V	7A (Tc)	40mOhm @ 4.5A, 10V	2.5V @ 250µA	18nC @ 10V	750pF @ 25V	4W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2004VK-7B	Diodes Incorporated	MOSFET 2N-CH 20V 0.54A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고24,000	-	20V	540mA (Ta)	550mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	250mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMHT10H032LFJ-13	Diodes Incorporated	MOSFET 4N-CH 100V 6A 12VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerVDFN Supplier Device Package: V-DFN5045-12 (Type C)	패키지: -	Request a Quote	-	100V	6A (Ta)	33mOhm @ 6A, 10V	2.5V @ 250µA	11.9nC @ 10V	683pF @ 50V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerVDFN	V-DFN5045-12 (Type C)
MSCSM120HM063AG	Microchip Technology	SIC 4N-CH 1200V 333A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Power - Max: 873W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 12mA	928nC @ 20V	12000pF @ 1000V	873W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
DMN3013LFG-7	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2.16W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	패키지: -	Request a Quote	-	30V	9.5A (Ta), 15A (Tc)	14.3mOhm @ 4A, 8V	1.2V @ 250µA	5.7nC @ 4.5V	600pF @ 15V	2.16W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)

AON6974A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/30A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 30A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

패키지: 8-PowerVDFN

재고59,196

Logic Level Gate

30V

22A, 30A

5.2 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1037pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI5933DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고4,256

Logic Level Gate

20V

2.7A

110 mOhm @ 2.7A, 4.5V

1V @ 250µA

7.7nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI4330DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,416

Logic Level Gate

30V

6.6A

16.5 mOhm @ 8.7A, 10V

3V @ 250µA

20nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS2DPF80

STMicroelectronics

MOSFET 2P-CH 80V 2A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 739pF @ 25V
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고54,636

Logic Level Gate

80V

2A

250 mOhm @ 1A, 10V

4V @ 250µA

20nC @ 10V

739pF @ 25V

2.5W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM120A20DG

Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고4,496

Standard

1200V (1.2kV)

50A

240 mOhm @ 25A, 10V

5V @ 6mA

600nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

TSM4936DCS RLG

TSC America Inc.

MOSFET, DUAL, N-CHANNEL, TRENCH,

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,088

Standard

30V

5.9A (Ta)

36 mOhm @ 5.9A, 10V

3V @ 250µA

13nC @ 10V

610pF @ 15V

3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF8910TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고689,976

Logic Level Gate

20V

10A

13.4 mOhm @ 10A, 10V

2.55V @ 250µA

11nC @ 4.5V

960pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7303TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고33,600

Standard

30V

4.9A

50 mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4670DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,085,856

Logic Level Gate

25V

8A

23 mOhm @ 7A, 10V

2.2V @ 250µA

18nC @ 10V

680pF @ 13V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC8097AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 150V

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고2,240

Standard

150V

2.4A (Ta), 900mA (Tc)

155 mOhm @ 2.4A, 10V

4V @ 250µA

6.2nC @ 10V

395pF @ 75V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

FDS4501H

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/20V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고512,832

Logic Level Gate

30V, 20V

9.3A, 5.6A

18 mOhm @ 9.3A, 10V

3V @ 250µA

27nC @ 4.5V

1958pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSS84V-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SOT-563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고366,720

Logic Level Gate

50V

130mA

10 Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDS8858CZ

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8.6A/7.3A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 7.3A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고562,662

Logic Level Gate

30V

8.6A, 7.3A

17 mOhm @ 8.6A, 10V

3V @ 250µA

24nC @ 10V

1205pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA2002NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 2.9A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 650mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고1,212,000

Logic Level Gate

30V

2.9A

123 mOhm @ 2.9A, 4.5V

1.5V @ 250µA

3nC @ 4.5V

220pF @ 15V

650mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

MSCSM120HRM052NG

Microchip Technology

SIC 4N-CH 1200V/700V 472A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V
Power - Max: 1.846kW (Tc), 1.161kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV), 700V

472A (Tc), 442A (Tc)

5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V

2.8V @ 18mA, 2.4V @ 16mA

1392nC @ 20V, 860nC @ 20V

18100pF @ 1000V, 18000pF @ 700V

1.846kW (Tc), 1.161kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SIL2623-TP

Micro Commercial Co

MOSFET 2P-CH 30V 3A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

패키지: -

Request a Quote

-

30V

3A

130mOhm @ 3A, 10V

3V @ 250µA

4.5nC @ 4.5V

240pF @ 25V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

AOCA32108E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (3.01x1.52)

패키지: -

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-

12V

25A (Ta)

3.8mOhm @ 5A, 4.5V

1.1V @ 250µA

32nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (3.01x1.52)

DMP22D5UDJ-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.36A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 15V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: -

재고29,700

-

20V

360mA (Ta)

1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.3nC @ 4.5V

17pF @ 15V

380mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTMFD1D6N03P8

onsemi

MOSFET 2N-CH 30V 17A/56A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

재고8,976

-

30V

17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)

5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V

3V @ 250µA, 3V @ 1mA

24nC @ 10V, 87nC @ 10V

1715pF @ 15V, 6430pF @ 15V

2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

FF3MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

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1200V (1.2kV)

375A (Tc)

2.83mOhm @ 375A, 15V

5.15V @ 168mA

1000nC @ 15V

29800pF @ 25V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

DMC62D0SVQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

Surface Mount

SOT-563, SOT-666

SOT-563

UPA602T-T2-A

Renesas Electronics Corporation

MOSFET 2N-CH 50V 0.1A SC59

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59-6
Supplier Device Package: SC-59

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Logic Level Gate

50V

100mA

25Ohm @ 10mA, 10V

1.8V @ 1µA

-

16pF @ 5V

300mW

150°C (TJ)

Surface Mount

SC-59-6

SC-59

SSF2120Y

Good-Ark Semiconductor

MOSFET, N+P, DUAL, 0.8 -0.4A, 20

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Power - Max: 312mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고17,958

-

20V

800mA (Tc), 400mA (Tc)

300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V

1V @ 250µA

1nC @ 4.5V

75pF @ 10V, 78pF @ 10V

312mW

-55°C ~ 150°C

Surface Mount

SOT-563, SOT-666

SOT-563

SQ4946AEY-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power - Max: 4W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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60V

7A (Tc)

40mOhm @ 4.5A, 10V

2.5V @ 250µA

18nC @ 10V

750pF @ 25V

4W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2004VK-7B

Diodes Incorporated

MOSFET 2N-CH 20V 0.54A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고24,000

-

20V

540mA (Ta)

550mOhm @ 540mA, 4.5V

1V @ 250µA

-

150pF @ 16V

250mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMHT10H032LFJ-13

Diodes Incorporated

MOSFET 4N-CH 100V 6A 12VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerVDFN
Supplier Device Package: V-DFN5045-12 (Type C)

패키지: -

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100V

6A (Ta)

33mOhm @ 6A, 10V

2.5V @ 250µA

11.9nC @ 10V

683pF @ 50V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerVDFN

V-DFN5045-12 (Type C)

MSCSM120HM063AG

Microchip Technology

SIC 4N-CH 1200V 333A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Power - Max: 873W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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1200V (1.2kV)

333A (Tc)

7.8mOhm @ 80A, 20V

2.8V @ 12mA

928nC @ 20V

12000pF @ 1000V

873W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

DMN3013LFG-7

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2.16W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

패키지: -

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30V

9.5A (Ta), 15A (Tc)

14.3mOhm @ 4A, 8V

1.2V @ 250µA

5.7nC @ 4.5V

600pF @ 15V

2.16W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)