페이지 203 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7905PBF	Infineon Technologies	MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,440	Logic Level Gate	30V	7.8A, 8.9A	21.8 mOhm @ 7.8A, 10V	2.25V @ 25µA	6.9nC @ 4.5V	600pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4920DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,080	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	23nC @ 5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTSM120TAM33CTPAG	Microsemi Corporation	POWER MODULE - SIC FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V Power - Max: 714W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	패키지: SP6	재고6,992	Silicon Carbide (SiC)	1200V (1.2kV)	112A (Tc)	33 mOhm @ 60A, 20V	3V @ 3mA	408nC @ 20V	7680pF @ 1000V	714W	-40°C ~ 175°C (TJ)	Chassis Mount	SP6	SP6
DMC4040SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V SO-8 T&R 2 FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Power - Max: 17.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,504	Logic Level Gate	40V	7.5A (Ta)	25 mOhm @ 3A, 10V	1.8V @ 250µA	16nC @ 4.5V	1790pF @ 20V	17.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZ900DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 24A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A, 28A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V Power - Max: 48W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	패키지: 6-PowerPair?	재고125,028	Logic Level Gate	30V	24A, 28A	7.2 mOhm @ 19.4A, 10V	2.4V @ 250µA	45nC @ 10V	1830pF @ 15V	48W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
FDS4559_F085	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V 4.5A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,416	Logic Level Gate	60V	4.5A, 3.5A	55 mOhm @ 4.5A, 10V	3V @ 250µA	18nC @ 10V	650pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMA1025P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.1A MLP2X2 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고176,376	Logic Level Gate	20V	3.1A	155 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	4.8nC @ 4.5V	450pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
TT8J3TR	Rohm Semiconductor	4V DRIVE PCH+PCH MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고22,722	-	30V	2.5A	84 mOhm @ 2.5A, 10V	2.5V @ 1mA	4.8nC @ 5V	460pF @ 15V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
TT8K1TR	Rohm Semiconductor	MOSFET 2N-CH 20V 2.5A TSST8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	패키지: 8-SMD, Flat Lead	재고25,026	Logic Level Gate, 1.5V Drive	20V	2.5A	72 mOhm @ 2.5A, 4.5V	1V @ 1mA	3.6nC @ 4.5V	260pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
IRF7351PBF	Infineon Technologies	MOSFET 2N-CH 60V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,952	Logic Level Gate	60V	8A	17.8 mOhm @ 8A, 10V	4V @ 50µA	36nC @ 10V	1330pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7103TRPBF	Infineon Technologies	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고749,892	Standard	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	30nC @ 10V	290pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSS138DW-7-F	Diodes Incorporated	MOSFET 2N-CH 50V 0.2A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고219,012	Logic Level Gate	50V	200mA	3.5 Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ECH8602R-TL-H	onsemi	NCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC2710UV-13	Diodes Incorporated	MOSFET N/P-CH 20V 1.1A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 460mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	20V	1.1A (Ta), 800mA (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	460mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NXV08B800DT1	onsemi	MOSFET 80V APM17-MDC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.46mOhm @ 160A, 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Supplier Device Package: APM17-MDC	패키지: -	Request a Quote	-	80V	-	0.46mOhm @ 160A, 12V	4.6V @ 1mA	502nC @ 12V	30150pF @ 40V	-	-40°C ~ 125°C (TA)	Through Hole	17-PowerDIP Module (1.390", 35.30mm)	APM17-MDC
QH8K26TR	Rohm Semiconductor	MOSFET 2N-CH 40V 7A TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	패키지: -	재고4,902	-	40V	7A (Ta)	38mOhm @ 7A, 10V	2.5V @ 1mA	2.9nC @ 5V	275pF @ 20V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
NVMJD5D4N04CTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AOC3868	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XDFN Supplier Device Package: 6-DFN (2.7x1.8)	패키지: -	Request a Quote	-	-	-	-	1.1V @ 250µA	50nC @ 4.5V	-	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-XDFN	6-DFN (2.7x1.8)
BSM400D12P3G002	Rohm Semiconductor	SIC 2N-CH 1200V 400A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 5.6V @ 109.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V Power - Max: 1570W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고6	-	1200V (1.2kV)	400A (Tc)	-	5.6V @ 109.2mA	-	17000pF @ 10V	1570W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
DMN2024UFU-7	Diodes Incorporated	MOSFET 2N-CH 20V 7.5A/21A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 810mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	패키지: -	Request a Quote	-	20V	7.5A (Ta), 21A (Tc)	20.2mOhm @ 6.5A, 4.5V	950mV @ 250µA	14.8nC @ 10V	647pF @ 10V	810mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
DMN3401LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDS9958-F085	onsemi	MOSFET 2P-CH 60V 2.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	Logic Level Gate	60V	2.9A	105mOhm @ 2.9A, 10V	3V @ 250µA	23nC @ 10V	1020pF @ 30V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BUK9MFF-65PSS-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 13.6A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 25V Power - Max: 4.75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	패키지: -	Request a Quote	Logic Level Gate	65V	13.6A (Tc)	12.3mOhm @ 10A, 10V	2V @ 1mA	40.2nC @ 5V	3052pF @ 25V	4.75W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
STL64DN4F7AG	STMicroelectronics	MOSFET 2N-CH 40V 40A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V Power - Max: 57W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	Request a Quote	-	40V	40A (Tc)	8.5mOhm @ 20A, 10V	4V @ 250µA	9.8nC @ 10V	637pF @ 25V	57W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)
DMT3006LDV-13	Diodes Incorporated	MOSFET 2N-CH 30V 25A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	패키지: -	Request a Quote	-	30V	25A (Tc)	10mOhm @ 9A, 10V	3V @ 250µA	16.7nC @ 10V	1155pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMC67D8UFDB-7	Diodes Incorporated	MOSFET 41V-60V U-DFN2020-6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN62D0UV-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.49A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 470mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고8,067	Logic Level Gate	60V	490mA (Ta)	2Ohm @ 100mA, 4.5V	1V @ 250µA	0.5nC @ 4.5V	32pF @ 30V	470mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HP8KC6TB1	Rohm Semiconductor	60V 23A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	패키지: -	재고7,500	-	60V	8.5A (Ta), 23A (Tc)	27mOhm @ 8.5A, 10V	2.5V @ 1mA	7.6nC @ 10V	460pF @ 30V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP

IRF7905PBF

Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,440

Logic Level Gate

30V

7.8A, 8.9A

21.8 mOhm @ 7.8A, 10V

2.25V @ 25µA

6.9nC @ 4.5V

600pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4920DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,080

Logic Level Gate

30V

-

25 mOhm @ 6.9A, 10V

1V @ 250µA (Min)

23nC @ 5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTSM120TAM33CTPAG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V
Power - Max: 714W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

패키지: SP6

재고6,992

Silicon Carbide (SiC)

1200V (1.2kV)

112A (Tc)

33 mOhm @ 60A, 20V

3V @ 3mA

408nC @ 20V

7680pF @ 1000V

714W

-40°C ~ 175°C (TJ)

Chassis Mount

SP6

DMC4040SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V SO-8 T&R 2

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Power - Max: 17.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,504

Logic Level Gate

40V

7.5A (Ta)

25 mOhm @ 3A, 10V

1.8V @ 250µA

16nC @ 4.5V

1790pF @ 20V

17.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIZ900DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 24A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Power - Max: 48W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

패키지: 6-PowerPair?

재고125,028

Logic Level Gate

30V

24A, 28A

7.2 mOhm @ 19.4A, 10V

2.4V @ 250µA

45nC @ 10V

1830pF @ 15V

48W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

FDS4559_F085

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,416

Logic Level Gate

60V

4.5A, 3.5A

55 mOhm @ 4.5A, 10V

3V @ 250µA

18nC @ 10V

650pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMA1025P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.1A MLP2X2

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고176,376

Logic Level Gate

20V

3.1A

155 mOhm @ 3.1A, 4.5V

1.5V @ 250µA

4.8nC @ 4.5V

450pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

TT8J3TR

Rohm Semiconductor

4V DRIVE PCH+PCH MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고22,722

-

30V

2.5A

84 mOhm @ 2.5A, 10V

2.5V @ 1mA

4.8nC @ 5V

460pF @ 15V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

TT8K1TR

Rohm Semiconductor

MOSFET 2N-CH 20V 2.5A TSST8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

재고25,026

Logic Level Gate, 1.5V Drive

20V

2.5A

72 mOhm @ 2.5A, 4.5V

1V @ 1mA

3.6nC @ 4.5V

260pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

IRF7351PBF

Infineon Technologies

MOSFET 2N-CH 60V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,952

Logic Level Gate

60V

8A

17.8 mOhm @ 8A, 10V

4V @ 50µA

36nC @ 10V

1330pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7103TRPBF

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고749,892

Standard

50V

3A

130 mOhm @ 3A, 10V

3V @ 250µA

30nC @ 10V

290pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSS138DW-7-F

Diodes Incorporated

MOSFET 2N-CH 50V 0.2A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고219,012

Logic Level Gate

50V

200mA

3.5 Ohm @ 220mA, 10V

1.5V @ 250µA

-

50pF @ 10V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ECH8602R-TL-H

onsemi

NCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DMC2710UV-13

Diodes Incorporated

MOSFET N/P-CH 20V 1.1A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 460mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

Request a Quote

-

20V

1.1A (Ta), 800mA (Ta)

400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

460mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NXV08B800DT1

onsemi

MOSFET 80V APM17-MDC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 160A, 12V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 502nC @ 12V
Input Capacitance (Ciss) (Max) @ Vds: 30150pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Supplier Device Package: APM17-MDC

패키지: -

Request a Quote

-

80V

-

0.46mOhm @ 160A, 12V

4.6V @ 1mA

502nC @ 12V

30150pF @ 40V

-

-40°C ~ 125°C (TA)

Through Hole

17-PowerDIP Module (1.390", 35.30mm)

APM17-MDC

QH8K26TR

Rohm Semiconductor

MOSFET 2N-CH 40V 7A TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

패키지: -

재고4,902

-

40V

7A (Ta)

38mOhm @ 7A, 10V

2.5V @ 1mA

2.9nC @ 5V

275pF @ 20V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

NVMJD5D4N04CTWG

onsemi

MOSFET N-CH 40V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

AOC3868

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XDFN
Supplier Device Package: 6-DFN (2.7x1.8)

패키지: -

Request a Quote

-

1.1V @ 250µA

50nC @ 4.5V

-

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-XDFN

6-DFN (2.7x1.8)

BSM400D12P3G002

Rohm Semiconductor

SIC 2N-CH 1200V 400A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
Power - Max: 1570W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고6

-

1200V (1.2kV)

400A (Tc)

-

5.6V @ 109.2mA

-

17000pF @ 10V

1570W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

DMN2024UFU-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A/21A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 810mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

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20V

7.5A (Ta), 21A (Tc)

20.2mOhm @ 6.5A, 4.5V

950mV @ 250µA

14.8nC @ 10V

647pF @ 10V

810mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

DMN3401LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDS9958-F085

onsemi

MOSFET 2P-CH 60V 2.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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Logic Level Gate

60V

2.9A

105mOhm @ 2.9A, 10V

3V @ 250µA

23nC @ 10V

1020pF @ 30V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BUK9MFF-65PSS-518

Nexperia USA Inc.

MOSFET 2N-CH 65V 13.6A 20SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 25V
Power - Max: 4.75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

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Logic Level Gate

65V

13.6A (Tc)

12.3mOhm @ 10A, 10V

2V @ 1mA

40.2nC @ 5V

3052pF @ 25V

4.75W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

STL64DN4F7AG

STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
Power - Max: 57W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

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40V

40A (Tc)

8.5mOhm @ 20A, 10V

4V @ 250µA

9.8nC @ 10V

637pF @ 25V

57W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)

DMT3006LDV-13

Diodes Incorporated

MOSFET 2N-CH 30V 25A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

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30V

25A (Tc)

10mOhm @ 9A, 10V

3V @ 250µA

16.7nC @ 10V

1155pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMC67D8UFDB-7

Diodes Incorporated

MOSFET 41V-60V U-DFN2020-6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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DMN62D0UV-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.49A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Power - Max: 470mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

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재고8,067

Logic Level Gate

60V

490mA (Ta)

2Ohm @ 100mA, 4.5V

1V @ 250µA

0.5nC @ 4.5V

32pF @ 30V

470mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

HP8KC6TB1

Rohm Semiconductor

60V 23A, DUAL NCH+NCH, HSOP8, PO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Power - Max: 3W (Ta), 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

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재고7,500

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60V

8.5A (Ta), 23A (Tc)

27mOhm @ 8.5A, 10V

2.5V @ 1mA

7.6nC @ 10V

460pF @ 30V

3W (Ta), 21W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP