페이지 129 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BUK9MJT-55PRF,518	Nexperia USA Inc.	MOSFET 2N-CH 55V 20SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	패키지: 20-SOIC (0.295", 7.50mm Width)	재고7,040	Logic Level Gate	55V	-	13.8 mOhm @ 10A, 10V	-	-	-	-	-	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
NTHD4102PT3G	ON Semiconductor	MOSFET 2P-CH 20V 2.9A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고4,752	Logic Level Gate	20V	2.9A	80 mOhm @ 2.9A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	750pF @ 16V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
SI4933DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 7.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고207,600	Logic Level Gate	12V	7.4A	14 mOhm @ 9.8A, 4.5V	1V @ 500µA	70nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZVN4206NTA	Diodes Incorporated	MOSFET 2N-CH 60V SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	패키지: SOT-223-8	재고3,552	Standard	60V	-	-	-	-	-	-	-	Surface Mount	SOT-223-8	SOT-223
FDG6320C_D87Z	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 140mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,280	Logic Level Gate	25V	220mA, 140mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
IRFHM8363TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 11A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	패키지: 8-PowerVDFN	재고193,056	Logic Level Gate	30V	11A	14.9 mOhm @ 10A, 10V	2.35V @ 25µA	15nC @ 10V	1165pF @ 10V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (3.3x3.3), Power33
APTMC60TLM55CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 55A SP3F FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고7,584	Standard	1200V (1.2kV)	55A	49 mOhm @ 40A, 20V	2.2V @ 2mA (Typ)	98nC @ 20V	1900pF @ 1000V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC60HM70T1G	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고3,408	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
AO4614A	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고265,248	Logic Level Gate	40V	6A, 5A	31 mOhm @ 6A, 10V	3V @ 250µA	8.3nC @ 10V	404pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BSS138DWQ-7	Diodes Incorporated	MOSFET 2NCH 50V 200MA SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고6,624	Standard	50V	200mA	3.5 Ohm @ 220mA, 10V	1.5V @ 250µA	-	50pF @ 10V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SSM6N36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	패키지: SOT-563, SOT-666	재고4,064	Logic Level Gate	20V	500mA	630 mOhm @ 200mA, 5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
BUK7K32-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 29A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 29A Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V Power - Max: 64W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: SOT-1205, 8-LFPAK56	재고2,688	Standard	100V	29A	27.5 mOhm @ 5A, 10V	4V @ 1mA	34nC @ 10V	2137pF @ 25V	64W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMC1029UFDB-7	Diodes Incorporated	MOSFET N/P-CH 12V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고5,760	Standard	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MTM684110LBF	Panasonic Electronic Components	MOSFET 2P-CH 12V 4.8A WMINI8-F1 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	패키지: 8-SMD, Flat Lead	재고2,096	Standard	12V	4.8A	32 mOhm @ 1A, 5V	1V @ 1mA	-	1400pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
IPG20N06S2L35AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	패키지: 8-PowerVDFN	재고39,828	Logic Level Gate	55V	2A (Tc)	35 mOhm @ 15A, 10V	2V @ 27µA	23nC @ 10V	790pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
DMN61D8LVTQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: SOT-23-6 Thin, TSOT-23-6	재고3,904	Logic Level Gate	60V	630mA	1.8 Ohm @ 150mA, 5V	2V @ 1mA	0.74nC @ 5V	12.9pF @ 12V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
AON5802B	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7.2A 6DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	패키지: 6-SMD, Flat Lead Exposed Pad	재고58,260	Logic Level Gate	30V	7.2A	19 mOhm @ 7A, 4.5V	1.5V @ 250µA	24nC @ 10V	1150pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Lead Exposed Pad	6-DFN-EP (2x5)
SLA5068-LF830	Sanken	MOSFET 6N-CH 60V 7A 15-SIP FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-SIP	패키지: 15-SIP, Exposed Tab, Formed Leads	재고14,868	Standard	60V	7A	100 mOhm @ 3.5A, 10V	2V @ 250µA	-	660pF @ 10V	5W	150°C (TJ)	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-SIP
FDMA1023PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.7A MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	패키지: 6-VDFN Exposed Pad	재고2,017,512	Logic Level Gate	20V	3.7A	72 mOhm @ 3.7A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	655pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
MCH6615-TL-E	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CSD87503Q3ET	Texas Instruments	MOSFET 2N-CH 30V 10A 8VSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V Power - Max: 15.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-VSON (3.3x3.3)	패키지: -	재고11,220	-	30V	10A (Ta)	-	2.1V @ 250µA	17.4nC @ 4.5V	1020pF @ 15V	15.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-VSON (3.3x3.3)
STMFS4854NST1G	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N813R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고24,597	-	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
G300C03L6	Goford Semiconductor	MOSFET N+P-CH 30V 5.6A/4.2A SOT- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A, 4.2A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10 V, 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 15 V, 693pF @ -15 V Power - Max: 1.4W (Ta), 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L Dual	패키지: -	재고8,604	-	30V	5.6A, 4.2A (Tc)	27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V	1.3V @ 250µA	16nC @ 10 V, 8.5 nC @ 4.5 V	547pF @ 15 V, 693pF @ -15 V	1.4W (Ta), 500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L Dual
UPA2791GR-E1-AT	Renesas Electronics Corporation	MOSFET N/P-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	패키지: -	Request a Quote	Logic Level Gate	30V	5A	36mOhm @ 3A, 10V	2.5V @ 1mA	10nC @ 10V	400pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
CAB016M12FM3T	Wolfspeed, Inc.	SIC 2N-CH 1200V 78A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	재고6	-	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	6600pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
MSCSM120DDUM16TBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
2N7002DW-13-G	Diodes Incorporated	MOSFET 2N-CH 60V SOT-363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

BUK9MJT-55PRF,518

Nexperia USA Inc.

MOSFET 2N-CH 55V 20SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

패키지: 20-SOIC (0.295", 7.50mm Width)

재고7,040

Logic Level Gate

55V

-

13.8 mOhm @ 10A, 10V

-

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

NTHD4102PT3G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고4,752

Logic Level Gate

20V

2.9A

80 mOhm @ 2.9A, 4.5V

1.5V @ 250µA

8.6nC @ 4.5V

750pF @ 16V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

SI4933DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 7.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고207,600

Logic Level Gate

12V

7.4A

14 mOhm @ 9.8A, 4.5V

1V @ 500µA

70nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZVN4206NTA

Diodes Incorporated

MOSFET 2N-CH 60V SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

패키지: SOT-223-8

재고3,552

Standard

60V

-

Surface Mount

SOT-223-8

SOT-223

FDG6320C_D87Z

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 140mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,280

Logic Level Gate

25V

220mA, 140mA

4 Ohm @ 220mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

IRFHM8363TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 11A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

패키지: 8-PowerVDFN

재고193,056

Logic Level Gate

30V

11A

14.9 mOhm @ 10A, 10V

2.35V @ 25µA

15nC @ 10V

1165pF @ 10V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PQFN (3.3x3.3), Power33

APTMC60TLM55CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 55A SP3F

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고7,584

Standard

1200V (1.2kV)

55A

49 mOhm @ 40A, 20V

2.2V @ 2mA (Typ)

98nC @ 20V

1900pF @ 1000V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC60HM70T1G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고3,408

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

AO4614A

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고265,248

Logic Level Gate

40V

6A, 5A

31 mOhm @ 6A, 10V

3V @ 250µA

8.3nC @ 10V

404pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BSS138DWQ-7

Diodes Incorporated

MOSFET 2NCH 50V 200MA SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고6,624

Standard

50V

200mA

3.5 Ohm @ 220mA, 10V

1.5V @ 250µA

-

50pF @ 10V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SSM6N36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

패키지: SOT-563, SOT-666

재고4,064

Logic Level Gate

20V

500mA

630 mOhm @ 200mA, 5V

1V @ 1mA

1.23nC @ 4V

46pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

BUK7K32-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 29A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29A
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Power - Max: 64W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: SOT-1205, 8-LFPAK56

재고2,688

Standard

100V

29A

27.5 mOhm @ 5A, 10V

4V @ 1mA

34nC @ 10V

2137pF @ 25V

64W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMC1029UFDB-7

Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고5,760

Standard

12V

5.6A, 3.8A

29 mOhm @ 5A, 4.5V

1V @ 250µA

19.6nC @ 8V

914pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MTM684110LBF

Panasonic Electronic Components

MOSFET 2P-CH 12V 4.8A WMINI8-F1

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

패키지: 8-SMD, Flat Lead

재고2,096

Standard

12V

4.8A

32 mOhm @ 1A, 5V

1V @ 1mA

-

1400pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

IPG20N06S2L35AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

패키지: 8-PowerVDFN

재고39,828

Logic Level Gate

55V

2A (Tc)

35 mOhm @ 15A, 10V

2V @ 27µA

23nC @ 10V

790pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

DMN61D8LVTQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: SOT-23-6 Thin, TSOT-23-6

재고3,904

Logic Level Gate

60V

630mA

1.8 Ohm @ 150mA, 5V

2V @ 1mA

0.74nC @ 5V

12.9pF @ 12V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

AON5802B

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.2A 6DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

패키지: 6-SMD, Flat Lead Exposed Pad

재고58,260

Logic Level Gate

30V

7.2A

19 mOhm @ 7A, 4.5V

1.5V @ 250µA

24nC @ 10V

1150pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Lead Exposed Pad

6-DFN-EP (2x5)

SLA5068-LF830

Sanken

MOSFET 6N-CH 60V 7A 15-SIP

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-SIP

패키지: 15-SIP, Exposed Tab, Formed Leads

재고14,868

Standard

60V

7A

100 mOhm @ 3.5A, 10V

2V @ 250µA

-

660pF @ 10V

5W

150°C (TJ)

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-SIP

FDMA1023PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.7A MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

패키지: 6-VDFN Exposed Pad

재고2,017,512

Logic Level Gate

20V

3.7A

72 mOhm @ 3.7A, 4.5V

1.5V @ 250µA

12nC @ 4.5V

655pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

MCH6615-TL-E

onsemi

PCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

CSD87503Q3ET

Texas Instruments

MOSFET 2N-CH 30V 10A 8VSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 15V
Power - Max: 15.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-VSON (3.3x3.3)

패키지: -

재고11,220

-

30V

10A (Ta)

-

2.1V @ 250µA

17.4nC @ 4.5V

1020pF @ 15V

15.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-VSON (3.3x3.3)

STMFS4854NST1G

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SSM6N813R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고24,597

-

100V

3.5A (Ta)

112mOhm @ 3.5A, 10V

2.5V @ 100µA

3.6nC @ 4.5V

242pF @ 15V

1.5W (Ta)

175°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

G300C03L6

Goford Semiconductor

MOSFET N+P-CH 30V 5.6A/4.2A SOT-

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10 V, 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 15 V, 693pF @ -15 V
Power - Max: 1.4W (Ta), 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L Dual

패키지: -

재고8,604

-

30V

5.6A, 4.2A (Tc)

27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V

1.3V @ 250µA

16nC @ 10 V, 8.5 nC @ 4.5 V

547pF @ 15 V, 693pF @ -15 V

1.4W (Ta), 500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L Dual

UPA2791GR-E1-AT

Renesas Electronics Corporation

MOSFET N/P-CH 30V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP

패키지: -

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Logic Level Gate

30V

5A

36mOhm @ 3A, 10V

2.5V @ 1mA

10nC @ 10V

400pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-PSOP

CAB016M12FM3T

Wolfspeed, Inc.

SIC 2N-CH 1200V 78A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

재고6

-

1200V (1.2kV)

78A (Tj)

21.3mOhm @ 80A, 15V

3.6V @ 23mA

236nC @ 15V

6600pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

MSCSM120DDUM16TBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

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-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

2N7002DW-13-G

Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-