페이지 147 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF6723M2DTRPBF	Infineon Technologies	MOSFET 2N-CH 30V 15A DIRECTFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Power - Max: 2.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET? Isometric MA Supplier Device Package: DIRECTFET? MA	패키지: DirectFET? Isometric MA	재고45,684	Logic Level Gate	30V	15A	6.6 mOhm @ 15A, 10V	2.35V @ 25µA	14nC @ 4.5V	1380pF @ 15V	2.7W	-55°C ~ 175°C (TJ)	Surface Mount	DirectFET? Isometric MA	DIRECTFET? MA
IRF7504TR	Infineon Technologies	MOSFET 2P-CH 20V 1.7A MICRO8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고19,296	Logic Level Gate	20V	1.7A	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA	8.2nC @ 4.5V	240pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
APTC60DSKM70T3G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	패키지: SP3	재고2,816	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SI3850ADV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.4A 6TSOP FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.08W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고379,080	Logic Level Gate	20V	1.4A, 960mA	300 mOhm @ 500mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	-	1.08W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI1970DH-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고5,536	Logic Level Gate	30V	1.3A	225 mOhm @ 1.2A, 4.5V	1.6V @ 250µA	3.8nC @ 10V	95pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDG6322C_D87Z	Fairchild/ON Semiconductor	MOSFET N/P-CH 25V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: 6-TSSOP, SC-88, SOT-363	재고4,672	Logic Level Gate	25V	220mA, 410mA	4 Ohm @ 220mA, 4.5V	1.5V @ 250µA	0.4nC @ 4.5V	9.5pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
FDS6982	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고506,724	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	12nC @ 5V	760pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMD2C02R2	ON Semiconductor	MOSFET N/P-CH 20V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,296	Logic Level Gate	20V	5.2A, 3.4A	43 mOhm @ 4A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1100pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON6812	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 27A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Power - Max: 4.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (5.2x5.55)	패키지: 8-SMD, Flat Lead Exposed Pad	재고4,288	Logic Level Gate	30V	27A	4 mOhm @ 20A, 10V	2.2V @ 250µA	34nC @ 10V	1720pF @ 15V	4.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead Exposed Pad	8-DFN-EP (5.2x5.55)
DMP2060UFDB-13	Diodes Incorporated	MOSFET 2P-CH 20V 3.2A 6UDFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고6,496	Standard	20V	3.2A	90 mOhm @ 2.9A, 4.5V	1.4V @ 250µA	18nC @ 8V	881pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMP2100UFU-13	Diodes Incorporated	MOSFET 2P-CH 20V U-DFN2030-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6	패키지: 6-UFDFN Exposed Pad	재고7,248	Standard	20V	5.7A	38 mOhm @ 3.5A, 10V	1.4V @ 250µA	21.4nC @ 10V	906pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6
ALD110900ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,224	Standard	10.6V	-	500 Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BSM080D12P2C008	Rohm Semiconductor	SIC POWER MODULE-1200V-80A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 13.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power - Max: 600W Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,440	Standard	1200V (1.2kV)	80A	-	4V @ 13.2mA	-	800pF @ 10V	600W	175°C (TJ)	Chassis Mount	Module	Module
DMC1017UPD-13	Diodes Incorporated	MOSFET N/P-CH 12V 9.5A/6.9A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고60,000	Standard	12V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	35.4nC @ 10V	1787pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
IPG20N04S4L08ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	패키지: 8-PowerVDFN	재고49,350	Logic Level Gate	40V	20A	8.2 mOhm @ 17A, 10V	2.2V @ 22µA	39nC @ 10V	3050pF @ 25V	54W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
MMBT7002KDW-AQ	Diotec Semiconductor	MOSFET SOT363 N+N 60V 3OHM 150C FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V Power - Max: 295mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	Logic Level Gate	60V	300mA	3Ohm @ 500mA, 10V	1.75V @ 250µA	440pC @ 4.5V	21pF @ 25V	295mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	SOT-363
MSCSM120HM16CTBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
SP8M5FRATB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고30	-	30V	6A (Ta), 7A (Ta)	30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V	2.5V @ 1mA	7.2nC @ 5V, 25nC @ 5V	520pF @ 10V, 2600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN52D0UVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
HP8MA2TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 18A/15A 8HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Power - Max: 3W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	패키지: -	재고6,912	-	30V	18A (Ta), 15A (Ta)	9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V	2.5V @ 1mA	22nC @ 10V, 25nC @ 10V	1100pF @ 15V, 1250pF @ 15V	3W (Ta)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
AOC3862	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XDFN Supplier Device Package: 6-DFN (3.55x1.77)	패키지: -	Request a Quote	-	-	-	-	1.25V @ 250µA	46nC @ 4.5V	-	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-XDFN	6-DFN (3.55x1.77)
RJK0216DPA-00-J53	Renesas Electronics Corporation	MOSFET 2N-CH 25V 15A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 32A Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V Power - Max: 10W, 20W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WFDFN Supplier Device Package: 8-DFN (5x6)	패키지: -	Request a Quote	Logic Level Gate, 4.5V Drive	25V	15A, 32A	9.2mOhm @ 7.5A, 10V	-	6.2nC @ 4.5V	1130pF @ 10V	10W, 20W	150°C (TJ)	Surface Mount	8-WFDFN	8-DFN (5x6)
FDWS9520L-F085	onsemi	MOSFET 2P-CH 40V 60.8A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60.8A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	패키지: -	Request a Quote	-	40V	60.8A (Tc)	12.5mOhm @ 20A, 10V	3V @ 250µA	33nC @ 10V	2370pF @ 20V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
CMLDM7002AJ-TR-PBFREE	Central Semiconductor Corp	MOSFET 2N-CH 60V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고15,855	-	60V	280mA	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.59nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NVMFD5C462NWFT1G	onsemi	MOSFET 40V S08FL DUAL FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
MSCM20XM10T3XG	Microchip Technology	MOSFET 6N-CH 200V 108A SP3X FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V Power - Max: 341W (Tc) Operating Temperature: -40°C ~ 125°C (Tc) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3X	패키지: -	재고33	-	200V	108A (Tc)	9.7mOhm @ 81A, 10V	5V @ 250µA	161nC @ 10V	10700pF @ 50V	341W (Tc)	-40°C ~ 125°C (Tc)	Chassis Mount	Module	SP3X
DMN2022UDH-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V V-DFN3030-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQ4937EY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 30V 5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고1,005	-	30V	5A (Tc)	75mOhm @ 3.9A, 10V	2.5V @ 250µA	15nC @ 10V	480pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

IRF6723M2DTRPBF

Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET? Isometric MA
Supplier Device Package: DIRECTFET? MA

패키지: DirectFET? Isometric MA

재고45,684

Logic Level Gate

30V

15A

6.6 mOhm @ 15A, 10V

2.35V @ 25µA

14nC @ 4.5V

1380pF @ 15V

2.7W

-55°C ~ 175°C (TJ)

Surface Mount

DirectFET? Isometric MA

DIRECTFET? MA

IRF7504TR

Infineon Technologies

MOSFET 2P-CH 20V 1.7A MICRO8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고19,296

Logic Level Gate

20V

1.7A

270 mOhm @ 1.2A, 4.5V

700mV @ 250µA

8.2nC @ 4.5V

240pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

APTC60DSKM70T3G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

패키지: SP3

재고2,816

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SI3850ADV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6TSOP

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.08W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고379,080

Logic Level Gate

20V

1.4A, 960mA

300 mOhm @ 500mA, 4.5V

1.5V @ 250µA

1.4nC @ 4.5V

-

1.08W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI1970DH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고5,536

Logic Level Gate

30V

1.3A

225 mOhm @ 1.2A, 4.5V

1.6V @ 250µA

3.8nC @ 10V

95pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDG6322C_D87Z

Fairchild/ON Semiconductor

MOSFET N/P-CH 25V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: 6-TSSOP, SC-88, SOT-363

재고4,672

Logic Level Gate

25V

220mA, 410mA

4 Ohm @ 220mA, 4.5V

1.5V @ 250µA

0.4nC @ 4.5V

9.5pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

FDS6982

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고506,724

Logic Level Gate

30V

6.3A, 8.6A

28 mOhm @ 6.3A, 10V

3V @ 250µA

12nC @ 5V

760pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTMD2C02R2

ON Semiconductor

MOSFET N/P-CH 20V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 3.4A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,296

Logic Level Gate

20V

5.2A, 3.4A

43 mOhm @ 4A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1100pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AON6812

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 27A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
Power - Max: 4.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-DFN-EP (5.2x5.55)

패키지: 8-SMD, Flat Lead Exposed Pad

재고4,288

Logic Level Gate

30V

27A

4 mOhm @ 20A, 10V

2.2V @ 250µA

34nC @ 10V

1720pF @ 15V

4.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead Exposed Pad

8-DFN-EP (5.2x5.55)

DMP2060UFDB-13

Diodes Incorporated

MOSFET 2P-CH 20V 3.2A 6UDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고6,496

Standard

20V

3.2A

90 mOhm @ 2.9A, 4.5V

1.4V @ 250µA

18nC @ 8V

881pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMP2100UFU-13

Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6

패키지: 6-UFDFN Exposed Pad

재고7,248

Standard

20V

5.7A

38 mOhm @ 3.5A, 10V

1.4V @ 250µA

21.4nC @ 10V

906pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6

ALD110900ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,224

Standard

10.6V

-

500 Ohm @ 4V

10mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BSM080D12P2C008

Rohm Semiconductor

SIC POWER MODULE-1200V-80A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Power - Max: 600W
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,440

Standard

1200V (1.2kV)

80A

-

4V @ 13.2mA

-

800pF @ 10V

600W

175°C (TJ)

Chassis Mount

Module

DMC1017UPD-13

Diodes Incorporated

MOSFET N/P-CH 12V 9.5A/6.9A SMD

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고60,000

Standard

12V

9.5A, 6.9A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

35.4nC @ 10V

1787pF @ 6V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

IPG20N04S4L08ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Power - Max: 54W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

패키지: 8-PowerVDFN

재고49,350

Logic Level Gate

40V

20A

8.2 mOhm @ 17A, 10V

2.2V @ 22µA

39nC @ 10V

3050pF @ 25V

54W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

MMBT7002KDW-AQ

Diotec Semiconductor

MOSFET SOT363 N+N 60V 3OHM 150C

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 440pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V
Power - Max: 295mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

Logic Level Gate

60V

300mA

3Ohm @ 500mA, 10V

1.75V @ 250µA

440pC @ 4.5V

21pF @ 25V

295mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

SOT-363

MSCSM120HM16CTBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

Request a Quote

-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

SP8M5FRATB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V, 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, 2600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고30

-

30V

6A (Ta), 7A (Ta)

30mOhm @ 6A, 10V, 28mOhm @ 7A, 10V

2.5V @ 1mA

7.2nC @ 5V, 25nC @ 5V

520pF @ 10V, 2600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN52D0UVQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

50V

480mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

HP8MA2TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 18A/15A 8HSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Power - Max: 3W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

패키지: -

재고6,912

-

30V

18A (Ta), 15A (Ta)

9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V

2.5V @ 1mA

22nC @ 10V, 25nC @ 10V

1100pF @ 15V, 1250pF @ 15V

3W (Ta)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

AOC3862

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XDFN
Supplier Device Package: 6-DFN (3.55x1.77)

패키지: -

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-

1.25V @ 250µA

46nC @ 4.5V

-

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-XDFN

6-DFN (3.55x1.77)

RJK0216DPA-00-J53

Renesas Electronics Corporation

MOSFET 2N-CH 25V 15A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 32A
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
Power - Max: 10W, 20W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Supplier Device Package: 8-DFN (5x6)

패키지: -

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Logic Level Gate, 4.5V Drive

25V

15A, 32A

9.2mOhm @ 7.5A, 10V

-

6.2nC @ 4.5V

1130pF @ 10V

10W, 20W

150°C (TJ)

Surface Mount

8-WFDFN

8-DFN (5x6)

FDWS9520L-F085

onsemi

MOSFET 2P-CH 40V 60.8A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60.8A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

패키지: -

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-

40V

60.8A (Tc)

12.5mOhm @ 20A, 10V

3V @ 250µA

33nC @ 10V

2370pF @ 20V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)

CMLDM7002AJ-TR-PBFREE

Central Semiconductor Corp

MOSFET 2N-CH 60V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고15,855

-

60V

280mA

2Ohm @ 500mA, 10V

2.5V @ 250µA

0.59nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NVMFD5C462NWFT1G

onsemi

MOSFET 40V S08FL DUAL

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

패키지: -

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-

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MSCM20XM10T3XG

Microchip Technology

MOSFET 6N-CH 200V 108A SP3X

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 50V
Power - Max: 341W (Tc)
Operating Temperature: -40°C ~ 125°C (Tc)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3X

패키지: -

재고33

-

200V

108A (Tc)

9.7mOhm @ 81A, 10V

5V @ 250µA

161nC @ 10V

10700pF @ 50V

341W (Tc)

-40°C ~ 125°C (Tc)

Chassis Mount

Module

SP3X

DMN2022UDH-13

Diodes Incorporated

MOSFET BVDSS: 8V 24V V-DFN3030-8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SQ4937EY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고1,005

-

30V

5A (Tc)

75mOhm @ 3.9A, 10V

2.5V @ 250µA

15nC @ 10V

480pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC