페이지 19 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  19/203
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설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SI4565ADY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 6.6A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,520
Standard
40V
6.6A, 5.6A
39 mOhm @ 5A, 10V
2.2V @ 250µA
22nC @ 10V
625pF @ 20V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTM120H57FT3G
Microsemi Corporation

MOSFET 4N-CH 1200V 17A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고6,080
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot AOP610
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고471,744
Logic Level Gate
30V
-
24 mOhm @ 7.7A, 10V
3V @ 250µA
15nC @ 10V
630pF @ 15V
2.3W
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot MMDF2C03HDR2
ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,800
Logic Level Gate
30V
4.1A, 3A
70 mOhm @ 3A, 10V
3V @ 250µA
16nC @ 10V
630pF @ 24V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
APTM100TA35FPG
Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
패키지: SP6
재고5,824
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
MTM763250LBF
Panasonic Electronic Components

MOSFET N/P-CH 20V 1.7A/1A 6-SMD

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A, 1A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: WSMini6-F1-B
패키지: 6-SMD, Flat Leads
재고2,128
Logic Level Gate
20V
1.7A, 1A
120 mOhm @ 1A, 4V
1.3V @ 1mA
-
280pF @ 10V
700mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
WSMini6-F1-B
EM6K33T2R
Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고7,024
Logic Level Gate, 1.2V Drive
50V
200mA
2.2 Ohm @ 200mA, 4.5V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
DMTH4007SPDQ-13
Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14.2A
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
  • Power - Max: 2.6W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
패키지: 8-PowerTDFN
재고5,952
Standard
40V
14.2A
8.6 mOhm @ 17A, 10V
4V @ 250µA
41.9nC @ 10V
2026pF @ 30V
2.6W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
FDG6301N_F085
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.22A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
패키지: 6-TSSOP, SC-88, SOT-363
재고140,082
Logic Level Gate
25V
220mA
4 Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot NTMFD4901NFT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 1.1W, 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
패키지: 8-PowerTDFN
재고22,332
Logic Level Gate
30V
10.3A, 17.9A
6.5 mOhm @ 10A, 10V
2.2V @ 250µA
9.7nC @ 4.5V
1150pF @ 15V
1.1W, 1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot SI1902DL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.66A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
패키지: 6-TSSOP, SC-88, SOT-363
재고533,148
Logic Level Gate
20V
660mA
385 mOhm @ 660mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot SI4925BDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 5.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,009,608
Logic Level Gate
30V
5.3A
25 mOhm @ 7.1A, 10V
3V @ 250µA
50nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4882
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고217,260
Logic Level Gate
40V
8A
19 mOhm @ 8A, 10V
2.4V @ 250µA
12nC @ 10V
415pF @ 20V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SH8MB5TB1
Rohm Semiconductor

MOSFET N/P-CH 40V 8.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고18,546
-
40V
8.5A (Ta)
19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
2.5V @ 1mA
10.6nC @ 20V, 51nC @ 20V
530pF @ 20V, 2870pF @ 20V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MC7252KDW-TP
Micro Commercial Co

MOSFET N/P-CH 60V 0.34A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 340mA, 180mA
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA, 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF, 30pF @ 10V, 5V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고212,004
-
60V, 50V
340mA, 180mA
5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V
2.5V @ 1mA, 2V @ 250µA
-
40pF, 30pF @ 10V, 5V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
GSFK0501E
Good-Ark Semiconductor

MOSFET 2P-CH 50V 0.18A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
재고17,850
-
50V
180mA (Ta)
4Ohm @ 150mA, 10V
3V @ 250µA
530pC @ 10V
25.2pF @ 25V
300mW (Ta)
-50°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SQJB68EP-T1_BE3
Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Power - Max: 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
패키지: -
재고53,844
-
100V
11A (Tc)
92mOhm @ 4A, 10V
2.5V @ 250µA
8nC @ 10V
280pF @ 25V
27W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SI6963DQ
Fairchild Semiconductor

MOSFET 2P-CH 20V 3.8A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V
  • Power - Max: 600mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: -
Request a Quote
-
20V
3.8A (Ta)
43mOhm @ 3.8A, 4.5V
1.5V @ 250µA
16nC @ 4.5V
1015pF @ 10V
600mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
TSM085NB03DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 12A/51A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
  • Power - Max: 2W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
패키지: -
재고15,000
Logic Level Gate
30V
12A (Ta), 51A (Tc)
8.5mOhm @ 12A, 10V
2.5V @ 250µA
20nC @ 10V
1091pF @ 15V
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFNU (5x6)
MSCSM70TLM10C3AG
Microchip Technology

SIC 4N-CH 700V 241A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고45
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA (Typ)
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
Module
Module
FF8MR12W2M1B11BOMA1
Infineon Technologies

MOSFET 2N-CH 1200V AG-EASY2BM-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
  • Vgs(th) (Max) @ Id: 5.55V @ 60mA
  • Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2BM-2
패키지: -
Request a Quote
-
1200V (1.2kV)
150A (Tj)
7.5mOhm @ 150A, 15V (Typ)
5.55V @ 60mA
372nC @ 15V
11000pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY2BM-2
FF6MR12W2M1PB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V 200A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1200V (1.2kV)
200A (Tj)
5.63mOhm @ 200A, 15V
5.55V @ 80mA
496nC @ 15V
14700pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
DMT10H072LDV-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
패키지: -
Request a Quote
-
100V
12A (Tc)
66mOhm @ 4.5A, 10V
3V @ 250µA
4.5nC @ 10V
228pF @ 50V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
G06NP06S2
Goford Semiconductor

MOSFET N/P-CH 60V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
  • Power - Max: 2W (Tc), 2.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOP
  • Supplier Device Package: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고35,880
-
60V
6A (Tc)
35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
2.5V @ 250µA, 3.5V @ 250µA
22nC @ 10V, 25nC @ 10V
1350pF @ 30V, 2610pF @ 30V
2W (Tc), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
MSCSM120HM083AG
Microchip Technology

SIC 4N-CH 1200V 251A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
  • Power - Max: 1.042kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
-
1200V (1.2kV)
251A (Tc)
10.4mOhm @ 120A, 20V
2.8V @ 9mA
696nC @ 20V
9000pF @ 1000V
1.042kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
NXH010P120MNF1PNG
onsemi

SIC 2N-CH 1200V 114A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
  • Power - Max: 250W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고150
-
1200V (1.2kV)
114A (Tc)
14mOhm @ 100A, 20V
4.3V @ 40mA
454nC @ 20V
4707pF @ 800V
250W (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
BSZ0908NDXTMA2
Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
  • Power - Max: 700mW (Ta), 860mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-WISON-8
패키지: -
Request a Quote
Logic Level Gate, 4.5V Drive
30V
4.8A (Ta), 7.6A (Ta)
18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
2V @ 250µA
3nC @ 4.5V, 6.4nC @ 4.5V
340pF @ 15V, 730pF @ 15V
700mW (Ta), 860mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PG-WISON-8
UT6JA3TCR
Rohm Semiconductor

MOSFET 2P-CH 20V 5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고8,475
-
20V
5A (Ta)
59mOhm @ 5A, 4.5V
1.5V @ 1mA
6.5nC @ 4.5V
460pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8