페이지 31 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 어레이

기록 5,684
페이지  31/203
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제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot PMDPB56XN,115
NXP

MOSFET 2N-CH 30V 3.1A HUSON6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
패키지: 6-UDFN Exposed Pad
재고162,000
Logic Level Gate
30V
3.1A
73 mOhm @ 3.1A, 4.5V
1.5V @ 250µA
2.9nC @ 4.5V
170pF @ 15V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
hot SI9936DY
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고449,484
Standard
30V
5A
50 mOhm @ 5A, 10V
1V @ 250µA
35nC @ 10V
525pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FD6M033N06
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 73A EPM15

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 73A
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6010pF @ 25V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: EPM15
  • Supplier Device Package: EPM15
패키지: EPM15
재고5,440
Standard
60V
73A
3.3 mOhm @ 40A, 10V
4V @ 250µA
129nC @ 10V
6010pF @ 25V
-
-40°C ~ 150°C (TJ)
Through Hole
EPM15
EPM15
NTJD1155LT1
ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,024
Standard
8V
1.3A
175 mOhm @ 1.2A, 4.5V
1V @ 250µA
-
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
FDG6314P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,072
Standard
25V
-
-
-
-
-
-
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot FDS6894A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1676pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고91,140
Logic Level Gate
20V
8A
17 mOhm @ 8A, 4.5V
1.5V @ 250µA
24nC @ 4.5V
1676pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MMDF2P02HDR2G
ON Semiconductor

MOSFET 2P-CH 20V 3.3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 16V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고420,240
Logic Level Gate
20V
3.3A
160 mOhm @ 2A, 10V
2V @ 250µA
20nC @ 10V
588pF @ 16V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot STS3DPF60L
STMicroelectronics

MOSFET 2P-CH 60V 3A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고90,972
Logic Level Gate
60V
3A
120 mOhm @ 1.5A, 10V
1.5V @ 250µA
15.7nC @ 4.5V
630pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SLA5068 LF853
Sanken

MOSFET 6N-CH 60V 7A 15-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP
  • Supplier Device Package: 15-SIP
패키지: 15-SIP
재고5,104
Standard
60V
7A
100 mOhm @ 3.5A, 10V
2V @ 250µA
-
660pF @ 10V
5W
150°C (TJ)
Through Hole
15-SIP
15-SIP
hot SIA911ADJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
패키지: PowerPAK? SC-70-6 Dual
재고482,412
Standard
20V
4.5A
116 mOhm @ 2.8A, 4.5V
1V @ 250µA
13nC @ 8V
345pF @ 10V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
NVJD5121NT1G
ON Semiconductor

MOSFET 2N-CH 60V 0.295A SC88

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 295mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,696
Standard
60V
295mA
1.6 Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
MCQ4503-TP
Micro Commercial Co

N&P-CHANNEL MOSFET, SOP-8 PACKAG

  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,840
-
30V
6.3A, 8.6A
36 mOhm @ 6A, 10V
3V @ 250µA
20nC @ 4.5V
1380pF @ 25V
1.4W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot IRF8313TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고484,608
Logic Level Gate
30V
9.7A
15.5 mOhm @ 9.7A, 10V
2.35V @ 25µA
9nC @ 4.5V
760pF @ 15V
2W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS6900AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,633,992
Logic Level Gate
30V
6.9A, 8.2A
27 mOhm @ 6.9A, 10V
3V @ 250µA
15nC @ 10V
600pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS6982AS
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고365,952
Logic Level Gate
30V
6.3A, 8.6A
28 mOhm @ 6.3A, 10V
3V @ 250µA
15nC @ 10V
610pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDMA1032CZ
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V MICROFET 2X2

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
패키지: 6-VDFN Exposed Pad
재고9,984
Logic Level Gate
20V
3.7A, 3.1A
68 mOhm @ 3.7A, 4.5V
1.5V @ 250µA
6nC @ 4.5V
340pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
SI4953DY
Fairchild Semiconductor

MOSFET 2P-CH 30V 4.9A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
-
30V
4.9A (Ta)
53mOhm @ 4.9A, 10V
1V @ 250µA
25nC @ 10V
750pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PSMN014-60HSX
Nexperia USA Inc.

MOSFET 2N-CH 60V 30A LFPAK56D

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
  • Power - Max: 53W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
패키지: -
재고4,770
-
60V
30A (Ta)
14mOhm @ 10A, 10V
4V @ 1mA
23.6nC @ 10V
1578pF @ 25V
53W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
SISF20DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 14A/52A PPAK 12

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
  • Power - Max: 5.2W (Ta), 69.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8SCD Dual
  • Supplier Device Package: PowerPAK® 1212-8SCD Dual
패키지: -
Request a Quote
-
60V
14A (Ta), 52A (Tc)
13mOhm @ 7A, 10V
3V @ 250µA
33nC @ 10V
1290pF @ 30V
5.2W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SCD Dual
PowerPAK® 1212-8SCD Dual
PJQ5848_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 8.6A/30A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
  • Power - Max: 1.7W (Ta), 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
패키지: -
Request a Quote
-
40V
8.6A (Ta), 30A (Tc)
12mOhm @ 12A, 10V
2.5V @ 250µA
10nC @ 4.5V
1040pF @ 20V
1.7W (Ta), 20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8
PJQ1821_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 0.6A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 10V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN
  • Supplier Device Package: DFN1010-6L
패키지: -
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20V
600mA (Ta)
600mOhm @ 300mA, 4.5V
1V @ 250µA
1.1nC @ 4.5V
51pF @ 10V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN
DFN1010-6L
DMN66D0LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.115A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
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-
60V
115mA (Tc)
6Ohm @ 115mA, 5V
2V @ 250µA
0.9nC @ 10V
29.3pF @ 25V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SQUN700E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 200V/40V 16A DIE

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V, 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
  • Power - Max: 50W (Tc), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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200V, 40V
16A (Tc), 30A (Tc)
9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
3.5V @ 250µA, 2.5V @ 250µA
23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
50W (Tc), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
MSCSM70VR1M10CT3AG
Microchip Technology

SIC 2N-CH 700V 241A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
  • Power - Max: 690W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
재고12
-
700V
241A (Tc)
9.5mOhm @ 80A, 20V
2.4V @ 8mA
430nC @ 20V
9000pF @ 700V
690W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
OP533-005
WeEn Semiconductors

MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SQ3585EV-T1_GE3
Vishay Siliconix

MOSFET N/P-CH 20V 3.57A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: -
재고36,216
-
20V
3.57A (Tc), 2.5A (Tc)
77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
1.5V @ 250µA
2.5nC @ 4.5V, 3.5nC @ 4.5V
-
1.67W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
AO4914
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
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30V
8A (Ta)
20.5mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
865pF @ 15V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MCQ11NP04-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOP-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, 33mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 20V, 1080pF @ 20V
  • Power - Max: 2.1W (Tj), 2.3W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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40V
11A (Ta)
32mOhm @ 7A, 10V, 33mOhm @ 7A, 10V
2.5V @ 250µA
11nC @ 10V, 17nC @ 10V
390pF @ 20V, 1080pF @ 20V
2.1W (Tj), 2.3W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP