페이지 41 - 트랜지스터 - FET, MOSFET - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5851	Infineon Technologies	MOSFET N/PCH 20V 2.7A/2.2A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 960mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	패키지: SOT-23-6 Thin, TSOT-23-6	재고4,384	Logic Level Gate	20V	2.7A, 2.2A	90 mOhm @ 2.7A, 4.5V	1.25V @ 250µA	6nC @ 4.5V	400pF @ 15V	960mW	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
AO5804EL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH SC89-3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고17,568	Standard	20V	500mA	550 mOhm @ 500mA, 4.5V	1V @ 250µA	1nC @ 4.5V	45pF @ 10V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
NTLGD3502NT1G	ON Semiconductor	MOSFET 2N-CH 20V 4.3A/3.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.74W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (3x3)	패키지: 6-VDFN Exposed Pad	재고15,468	Logic Level Gate	20V	4.3A, 3.6A	60 mOhm @ 4.3A, 4.5V	2V @ 250µA	4nC @ 4.5V	480pF @ 10V	1.74W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (3x3)
SIA513DJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 4.5A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	패키지: PowerPAK? SC-70-6 Dual	재고7,168	Logic Level Gate	20V	4.5A	60 mOhm @ 3.4A, 4.5V	1.5V @ 250µA	12nC @ 10V	360pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
APTM100H80FT1G	Microsemi Corporation	MOSFET 4N-CH 1000V 11A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	패키지: SP1	재고2,480	Standard	1000V (1kV)	11A	960 mOhm @ 9A, 10V	5V @ 1mA	150nC @ 10V	3876pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
STS4C3F60L	STMicroelectronics	MOSFET N/P-CH 60V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고803,364	Logic Level Gate	60V	4A, 3A	55 mOhm @ 2A, 10V	1V @ 250µA	20.4nC @ 4.5V	1030pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60HM83FT2G	Microsemi Corporation	MOSFET 2N-CH 600V 36A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고4,176	Standard	600V	36A	83 mOhm @ 18A, 10V	5V @ 3mA	255nC @ 10V	7290pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
ALD114913PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V Vgs(th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,432	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 2.7V	1.26V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
LN60A01EP-LF	Monolithic Power Systems Inc.	MOSFET 3N-CH 600V 0.08A 8DIP FET Type: 3 N-Channel, Common Gate FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -20°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고7,360	Standard	600V	80mA	190 Ohm @ 10mA, 10V	1.2V @ 250µA	-	-	1.3W	-20°C ~ 125°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
DMN3016LDN-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V V-DFN3030- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: V-DFN3030-8 (Type J)	패키지: 8-PowerVDFN	재고6,576	Standard	-	9.2A (Ta)	20 mOhm @ 11A, 10V	2V @ 250µA	11.3nC @ 4.5V	1415pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	V-DFN3030-8 (Type J)
NTND3184NZTAG	ON Semiconductor	MOSFET N-CH 20V XLLGA6 FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-XLLGA (.90x.65)	패키지: 6-XFLGA	재고5,136	-	20V	220mA (Ta)	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.3pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA	6-XLLGA (.90x.65)
PMDXB600UNELZ	Nexperia USA Inc.	20 V, DUAL N-CHANNEL TRENCH MOSF FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	패키지: 6-XFDFN Exposed Pad	재고5,024	Standard	20V	600mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	380mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
MTMC8E280LBF	Panasonic Electronic Components	MOSFET 2N-CH 20V 7A WMINI8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	패키지: 8-SMD, Flat Lead	재고26,046	Standard	20V	7A	21 mOhm @ 2A, 4.5V	1.3V @ 1mA	-	1500pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
NTZD3154NT5G	ON Semiconductor	MOSFET 2N-CH 20V 0.54A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563-6	패키지: SOT-563, SOT-666	재고7,109,292	Standard	20V	540mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	150pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563-6
SI6954ADQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 3.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고136,824	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A, 10V	1V @ 250µA (Min)	16nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTUD3169CZT5G	ON Semiconductor	MOSFET N/P-CH 20V SOT-963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	패키지: SOT-963	재고988,896	Logic Level Gate	20V	220mA, 200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.5pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
G09N06S2	Goford Semiconductor	MOSFET 2N-CH 60V 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 30V Power - Max: 2.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	재고12,000	-	60V	9A (Tc)	18mOhm @ 9A, 10V	2.2V @ 250µA	47nC @ 10V	2180pF @ 30V	2.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SP8M3FU6TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	30V	5A (Ta), 4.5A (Ta)	51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V	2.5V @ 1mA	3.9nC @ 5V, 8.5nC @ 5V	230pF @ 10V, 850pF @ 10V	2W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJX8808_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고20,805	Logic Level Gate, 1.2V Drive	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	900mV @ 250µA	1.4nC @ 4.5V	67pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2991UDR4-7R	Diodes Incorporated	MOSFET 2N-CH 20V 0.5A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280pC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: X2-DFN1010-6 (Type UXC)	패키지: -	재고13,260	Logic Level Gate	20V	500mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	280pC @ 4.5V	14.6pF @ 16V	380mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	X2-DFN1010-6 (Type UXC)
FDS8978-F40	onsemi	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Power - Max: 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	-	30V	7.5A (Ta)	18mOhm @ 7.5A, 10V	2.5V @ 250µA	26nC @ 10V	1270pF @ 15V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
RFD20N03SM9AR4770	Fairchild Semiconductor	MOSFET N-CH 30V 20A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170HRM11NG	Microchip Technology	SIC 4N-CH 1700V/1200V 226A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V Power - Max: 1.012kW (Tc), 662W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	226A (Tc), 163A (Tc)	11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V	3.2V @ 10mA, 2.8V @ 6mA	712nC @ 20V, 464nC @ 20V	13200pF @ 1000V, 6040pF @ 1000V	1.012kW (Tc), 662W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
PJT7802_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.5A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V	1V @ 250µA	0.9nC @ 4.5V	39pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ECH8651R-R-TL-HX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJQ5848-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 8.6A/30A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Power - Max: 2W (Ta), 23.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	패키지: -	Request a Quote	-	40V	8.6A (Ta), 30A (Tc)	12mOhm @ 12A, 10V	2.5V @ 250µA	10nC @ 4.5V	1040pF @ 20V	2W (Ta), 23.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
FX50SMJ-2-B00	Renesas Electronics Corporation	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PSMN029-100HLX	Nexperia USA Inc.	MOSFET 2N-CH 100V 30A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	패키지: -	재고4,764	Logic Level Gate	100V	30A (Ta)	27mOhm @ 5A, 10V	2.1V @ 1mA	29.6nC @ 5V	3637pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

IRF5851

Infineon Technologies

MOSFET N/PCH 20V 2.7A/2.2A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 960mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

패키지: SOT-23-6 Thin, TSOT-23-6

재고4,384

Logic Level Gate

20V

2.7A, 2.2A

90 mOhm @ 2.7A, 4.5V

1.25V @ 250µA

6nC @ 4.5V

400pF @ 15V

960mW

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

AO5804EL

Alpha & Omega Semiconductor Inc.

MOSFET N-CH SC89-3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고17,568

Standard

20V

500mA

550 mOhm @ 500mA, 4.5V

1V @ 250µA

1nC @ 4.5V

45pF @ 10V

280mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

NTLGD3502NT1G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.74W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)

패키지: 6-VDFN Exposed Pad

재고15,468

Logic Level Gate

20V

4.3A, 3.6A

60 mOhm @ 4.3A, 4.5V

2V @ 250µA

4nC @ 4.5V

480pF @ 10V

1.74W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (3x3)

SIA513DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4.5A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

패키지: PowerPAK? SC-70-6 Dual

재고7,168

Logic Level Gate

20V

4.5A

60 mOhm @ 3.4A, 4.5V

1.5V @ 250µA

12nC @ 10V

360pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

APTM100H80FT1G

Microsemi Corporation

MOSFET 4N-CH 1000V 11A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3876pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

패키지: SP1

재고2,480

Standard

1000V (1kV)

11A

960 mOhm @ 9A, 10V

5V @ 1mA

150nC @ 10V

3876pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

STS4C3F60L

STMicroelectronics

MOSFET N/P-CH 60V 4A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고803,364

Logic Level Gate

60V

4A, 3A

55 mOhm @ 2A, 10V

1V @ 250µA

20.4nC @ 4.5V

1030pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTC60HM83FT2G

Microsemi Corporation

MOSFET 2N-CH 600V 36A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 36A
Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고4,176

Standard

600V

36A

83 mOhm @ 18A, 10V

5V @ 3mA

255nC @ 10V

7290pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

ALD114913PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 2.7V
Vgs(th) (Max) @ Id: 1.26V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,432

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 2.7V

1.26V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

LN60A01EP-LF

Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8DIP

FET Type: 3 N-Channel, Common Gate
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -20°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고7,360

Standard

600V

80mA

190 Ohm @ 10mA, 10V

1.2V @ 250µA

-

1.3W

-20°C ~ 125°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

DMN3016LDN-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V V-DFN3030-

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: V-DFN3030-8 (Type J)

패키지: 8-PowerVDFN

재고6,576

Standard

-

9.2A (Ta)

20 mOhm @ 11A, 10V

2V @ 250µA

11.3nC @ 4.5V

1415pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

V-DFN3030-8 (Type J)

NTND3184NZTAG

ON Semiconductor

MOSFET N-CH 20V XLLGA6

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Supplier Device Package: 6-XLLGA (.90x.65)

패키지: 6-XFLGA

재고5,136

-

20V

220mA (Ta)

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12.3pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-XFLGA

6-XLLGA (.90x.65)

PMDXB600UNELZ

Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSF

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Power - Max: 380mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

패키지: 6-XFDFN Exposed Pad

재고5,024

Standard

20V

600mA

620 mOhm @ 600mA, 4.5V

950mV @ 250µA

0.7nC @ 4.5V

21.3pF @ 10V

380mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

MTMC8E280LBF

Panasonic Electronic Components

MOSFET 2N-CH 20V 7A WMINI8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

패키지: 8-SMD, Flat Lead

재고26,046

Standard

20V

7A

21 mOhm @ 2A, 4.5V

1.3V @ 1mA

-

1500pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

NTZD3154NT5G

ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563-6

패키지: SOT-563, SOT-666

재고7,109,292

Standard

20V

540mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

150pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563-6

SI6954ADQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고136,824

Logic Level Gate

30V

3.1A

53 mOhm @ 3.4A, 10V

1V @ 250µA (Min)

16nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTUD3169CZT5G

ON Semiconductor

MOSFET N/P-CH 20V SOT-963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

패키지: SOT-963

재고988,896

Logic Level Gate

20V

220mA, 200mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12.5pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

G09N06S2

Goford Semiconductor

MOSFET 2N-CH 60V 9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 30V
Power - Max: 2.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고12,000

-

60V

9A (Tc)

18mOhm @ 9A, 10V

2.2V @ 250µA

47nC @ 10V

2180pF @ 30V

2.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SP8M3FU6TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

30V

5A (Ta), 4.5A (Ta)

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

2.5V @ 1mA

3.9nC @ 5V, 8.5nC @ 5V

230pF @ 10V, 850pF @ 10V

2W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJX8808_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고20,805

Logic Level Gate, 1.2V Drive

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

900mV @ 250µA

1.4nC @ 4.5V

67pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2991UDR4-7R

Diodes Incorporated

MOSFET 2N-CH 20V 0.5A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Power - Max: 380mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: X2-DFN1010-6 (Type UXC)

패키지: -

재고13,260

Logic Level Gate

20V

500mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

280pC @ 4.5V

14.6pF @ 16V

380mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

X2-DFN1010-6 (Type UXC)

FDS8978-F40

onsemi

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Power - Max: 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

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30V

7.5A (Ta)

18mOhm @ 7.5A, 10V

2.5V @ 250µA

26nC @ 10V

1270pF @ 15V

1.6W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

RFD20N03SM9AR4770

Fairchild Semiconductor

MOSFET N-CH 30V 20A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MSCSM170HRM11NG

Microchip Technology

SIC 4N-CH 1700V/1200V 226A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V
Power - Max: 1.012kW (Tc), 662W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

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1700V (1.7kV), 1200V (1.2kV)

226A (Tc), 163A (Tc)

11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V

3.2V @ 10mA, 2.8V @ 6mA

712nC @ 20V, 464nC @ 20V

13200pF @ 1000V, 6040pF @ 1000V

1.012kW (Tc), 662W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

PJT7802_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.5A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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20V

500mA (Ta)

400mOhm @ 500mA, 4.5V

1V @ 250µA

0.9nC @ 4.5V

39pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ECH8651R-R-TL-HX

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PJQ5848-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 8.6A/30A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Power - Max: 2W (Ta), 23.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

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40V

8.6A (Ta), 30A (Tc)

12mOhm @ 12A, 10V

2.5V @ 250µA

10nC @ 4.5V

1040pF @ 20V

2W (Ta), 23.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

FX50SMJ-2-B00

Renesas Electronics Corporation

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PSMN029-100HLX

Nexperia USA Inc.

MOSFET 2N-CH 100V 30A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3637pF @ 25V
Power - Max: 68W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

패키지: -

재고4,764

Logic Level Gate

100V

30A (Ta)

27mOhm @ 5A, 10V

2.1V @ 1mA

29.6nC @ 5V

3637pF @ 25V

68W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D